Browse > Article
http://dx.doi.org/10.3795/KSME-B.2007.31.3.225

Characteristic of GaN Growth on the Periodically Patterned Substrate for Several Reactor Configurations  

Kang, Sung-Ju (전북대학교 대학원 정밀기계공학과)
Kim, Jin-Taek (전북대학교 자동차신기술연구센터)
Pak, Bock-Choon (전북대학교 기계항공시스템공학부)
Lee, Cheul-Ro (전북대학교 신소재공학부)
Baek, Byung-Joon (전북대학교 기계항공시스템공학부 자동차신기술연구센터)
Publication Information
Transactions of the Korean Society of Mechanical Engineers B / v.31, no.3, 2007 , pp. 225-233 More about this Journal
Abstract
The growth of GaN on the patterned substances has proven favorable to achieve thick, crack-free GaN layers. In this paper, numerical modeling of transport and reaction of species is performed to estimate the growth rate of GaN from tile reaction of TMG(trimethly-gallium) and ammonia. GaN growth rate was estimated through the model analysis including the effect of species velocity, thermal convection and chemical reaction, and thermal condition for the uniform deposition was to be presented. The effect of shape and construction of microscopic pattern was also investigated using a simulator to perform surface analysis, and a review was done on the quantitative thickness and shape in making GaN layer on the pattern. Quantitative analysis was especially performed about the shape of reactor geometry, periodicity of pattern and flow conditions which decisively affect the quality of crystal growth. It was found that the conformal deposition could be obtained with the inclination of trench ${\Theta}>125^{\circ}$. The aspect ratio was sensitive to the void formation inside trench and the void located deep in trench with increased aspect ratio.
Keywords
GaN; Conformal Deposition; Opening Width; Coverage; Feature Scale Model;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Kyong-Jun Kim, Seong-Hwan Jang, Seong-Suk Lee, Hyeong-Gon Kang, Yoon-Bong Hahn and Cheul-Ro Lee, 2004, 'Characteristic Comparison of GaN Epitaxy Grown on Patterned and Unpatterned Si(111),' 2004 Fall KPS Conference
2 Fotiadis, D.I., Kieda, S. and Jensen, K.F., 1990, 'Transport Phenomena in Vertical Reactors for Metal Organic Vapor Phase Epitaxy,' J. of Crystal Growth, Vol. 102, pp. 441-470   DOI   ScienceOn
3 Pawlowski, R., Theodoropoulos, C., Salinger, A.G. and Thrush, T.J., 2000, 'Fundamental Models of the Metal Organic Vapor-phase Epitaxy of Gallium Nitride and Their Use in Reactor Design,' J. of Crystal Growth, Vol. 221, pp. 622-628   DOI   ScienceOn
4 Safvi, S.A., Redwig, J.M., Tischler, M.A. and Kuech, T.F., 1997, 'GaN Growth by Metallorganic Vapor Phase Epitaxy,' J. Electrochem. Soc., Vol. 144, No. 5, pp. 1789-1795   DOI
5 Pai, C.S., 1996, 'High Quality Voids Free Oxide Deposition,' Materials Chemistry and Physics, Vol. 44, pp. 1-8   DOI   ScienceOn
6 Gobbert, M.K., Merchant, T.P., Borucki, L.J. and Cale, T.S., 1997, 'A Multiple Simulator for Low Pressure Chemical Vapor Deposition,' J. Electrochem. Soc., Vol. 144, No. 11, pp. 3945-3957   DOI
7 Han, H.W., 2003, 'Feature Scale Modeling by Using CFD-TOPO,' CFD-ACE User conference
8 Mihopoulos, T.G., Massachusetts Institute of Technology, 1998, Ph.D. Thesis
9 CFDRC, CFD-ACE User's Guide, 2003
10 Riemann, T., Christen, J., Kaschener, A., Laades, A., Hoffmann, A., Thomsen, C., Iwaya, M., Kamiyama, S. and Akasaki, I., 2002, 'Direct Observation of Ga-rich Microdomains in Crack-free AlGaN Grown on Patterned GaN/sappire Substrate,' Applied Physics Letters, Vol. 80, No. 17, pp. 3093-3095   DOI   ScienceOn
11 Theodoropoulos, C., Mountziaris, T.J., Moffat, H.K. and Han, J., 2000, 'Design of Gas Inlets for the Growth od Gallium Nitride by Metaloganic Vapor Phase Epitaxy,' J. of Crystal Growth, Vol. 217, pp. 65-81   DOI   ScienceOn