• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.27 no.1
• /
• pp.22-27
• /
• 2017

$TiO_2$ films, thickness of $1{\sim}30{\mu}m$ were deposited on glass substrate at room temperature by room temperature granule spray in vacuum. The starting powder was calcinated at $600^{\circ}C$ for 4 h using $Al_2O_3$ crucible in the furnace. The particle size of the $TiO_2$, $1.5{\mu}m$ was measured by a particle size analyzer. The effect of different process parameters such as number of pass, gas flow rate and feeder voltage was studied. As the number of passes increased, the film thickness increased proportionally due to adequate kinetic energy conserved. The effect of three different flow rates (i.e. 15, 25, and 35 LPM) on deposited film was investigated. As gas flow rate increased, the film thickness increased up to 25 LPM and then decreased. Higher feeder voltage with low flow rate of 15 LPM resulted in unsufficient coating thickness due to insufficient kinetic energy. Microstructure of $TiO_2$ films was investigated by scanning electron microscope and high resolution tramission electron microscope.

• Journal of the Korean institute of surface engineering
• /
• v.50 no.3
• /
• pp.177-182
• /
• 2017

The properties of electroless Ni-B thin film on diamond powder with different parameters (temperature, pH, surfactant etc.) were studied. The surface morphology, structure and composition distribution of the Ni-B film were observed by field effect scanning electron microscope (FE-SEM), energy-dispersive spectrometer (EDS), X-ray diffraction (XRD) and Auger electron spectroscopy (AES). The growth rate of Ni-B film was increased with increase of bath temperature. The B content in Ni-B film was reduced with increase of bath pH. As a result the structure of Ni-B film was changed from amorphous to crystalline structure. The PVP in solution plays multi-functional roles as a dispersant and a stabilizer. The Ni-B film deposited with adding 0.1 mM-PVP was strongly introduced an amorphous structure with higher B content (25 at.%). Also the crystallite size of Ni-B film was reduced from 12.7 nm to 5.4 nm.

• Journal of the Korean Vacuum Society
• /
• v.4 no.S1
• /
• pp.168-173
• /
• 1995

$GaxIn{1_x}As$ epitaxial layers were grown by a simplified hydrode vapor phase epitaxy(VPE) method bsed on the utilization of Ga/In alloy as the source metal. The effects of a wide range of experimental variables(i.e.,inlet mole fraction of HCI, deposition temperature, Ga/In alloy composition) on the ternary composition and growth rate were investigated. Layers of $Ga_{0.47}In_{0.53}As$ lattice matched to InP were successfully grown from alloys containing 5 to 8 at.% Ga. These layers were used to produce state-of-the art p-i-n photodetectors having the following characteristics: dark current, $I_d$(-5V) = 10-20 nA: responsivity, R=0.84-0.86 A/W; dark current, Id(-5V)=10-20 nA; responsivity, R=0.84-0.86 A/W; capacitance, C=0.88-0.92 pF; breakdown voltage, $V_b$ >40V. This study demonstrated for the first time that a simplified hydride VPE process with a Ga/In alloy source is capable of producing device quality epitaxial layers.

• Asian-Australasian Journal of Animal Sciences
• /
• v.21 no.10
• /
• pp.1383-1388
• /
• 2008

Because of high growth rate and large deposition of fat in the abdomen, the chicken has been used as a model organism for understanding lipid metabolism, fattening and growing. In this study, differentially expression of proteins in chicken liver, one of the important organs for lipid metabolism, has been investigated at four different growing stages. After separation of proteins using two-dimensional electrophoresis (2-DE), more than 700 protein spots were detected. Among them, 13 growing stage specific proteins in chicken liver were selected and further investigated by matrix-assisted laser adsorptions ionization-time of flight mass spectrometry (MALDI-TOF MS). Of these, 12 proteins were matched to existing proteins based on a database search. The identified fat-related proteins in this study were fatty acid synthase (FASN) and malic enzyme (ME1). These proteins were more highly expressed at week 32 than at other weeks. In order to confirm the differential expression, one of the proteins, FASN, was confirmed by western blotting. The identified proteins will give valuable information on biochemical roles in chicken liver, especially for lipid metabolism.

• 한국초전도학회:학술대회논문집
• /
• v.9
• /
• pp.58-62
• /
• 1999

We fabricated a new hairpin type HTS 2-pole microstrip Bandpass filter to operate at 5.8GHz. The fabrication method was pulsed laser deposition and YBCO films were deposited on ${\alpha}$-A1$_2O_3$ substrates with a CeO$_2$ thin layer as a buffer layer. We developed a new style hairpin type filter by using interdigitide innerpole. Compared to the saute size regular hairpin type filters, our filter had a lower center frequency, bandwidth and loss by an amount of 14.5%, 29.6%, 0.5488dB, respectively. The size of the filters were 13.7${\times}$3.3mm. We did simulations on the several types of band pass filters by using HFSS and serenade. We measured growth rate and Tc of YBCO films grown on CeO$_2$/ ${\alpha}$-A1$_2O_3$ substrates which were rotated while growing films.

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1532-1535
• /
• 1996

Diamond-like carbon (DLC) films have been prepared by a widely-used plasma CVD with an rf (13.56MHz) plasma of $CH_4$ gas. The hydrogen incorporated in DLC films plays an important role of determining the film properties, but its exact role has not been clear. In this study, the effect of hydrogen on the film properties of DLC has been examined by adding the hydrogen gas to the $CH_4$ gas during deposition and by exposing the prepared film to the hydrogen plasma. As the content of additive hydrogen gas increases, the density and hardness of the film increase, but the growth rate decreases. The FT-IR spectroscopy results show that the number of C-H bonds decreases with increasing the hydrogen gas. Also, the variation in the position of "G" and "D" peaks due to additive hydrogen, which has been measured by the Raman spectroscopy, indicates of $sp^3$ fraction.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1437-1439
• /
• 2009

Electrical and optical properties of $SiO_2$-doped ZnO (SZO) films on the corning 7059 glass substrates by using rfmagnetron sputtering method are investigated. The deposition rate becomes maximum near 3 wt.% and gradually decreases when the $SiO_2$ content further increases. The growth rates at 3 wt.% is $4^{\circ}$A/s. We found that the average transmittance of all films is over 80% in the wavelength range above 500 nm. The optical band gap decreases from 3.52 to 3.33 eV with an increase in thickness. X-ray diffraction patterns show that the film with a relatively low $SiO_2$ content (< 4 wt.%) is amorphous. SZO films at the $SiO_2$ contents of 2 wt.% shows the resistivity of about $3.8{\times}10^{-3}{\cdot}cm$. The sheet resistance decreases with increasing the heat treatment temperature.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.8 no.3
• /
• pp.62-67
• /
• 2009

Pt thin films on Cr or Ti interlayer were deposited onto a tungsten carbide(WC) substrate by the ion beam assisted DC magnetron sputtering. The various atomic percent of Cr and Ti underneath of the Pt films were prepared to examine the total thin film characteristics. The microstructure and surface analysis of the specimen were conducted by using the SEM, XRD and AFM. Mechanical properties such as hardness and adhesion strength of Pt thin film also were examined. The interlayer of pure Ti was formed with 40 nm thickness while that of pure Cr was done with 50 nm as standard reference. The growth rate of either Cr or Ti thin film was almost same under the same deposition conditions. The SEM images showed that anisotropic grain of Pt thin films consisting of dense columnar structures irrespectively grew from the different target compositions. The values of hardness and adhesion strength of Cr/Pt thin film coated on a WC substrate were higher than those of Ti/Pt thin film.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2002.11a
• /
• pp.81-84
• /
• 2002

The effects of the isoelectronic AI-doping of GaN grown by metal organic chemical vapor deposition were investigated for the first time using scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL), and time-resolved PL. When a certain amount of Al was incorporated into the GaN films, the room temperature photoluminescence intensity of the films was approximately two orders larger than that of the undoped GaN. More importantly, the electron mobility significantly increased from 130 for the undoped sample to $500\textrm{cm}^2/Vs$ for the sample grown at a TMAl flow rate of $10{\mu}mol/min$, while the unintentional background concentration only increased slightly relative to the TMAl flow. The incorporation of Al as an isoelectronic dopant into GaN was easy during MOCVD growth and significantly improved the optical and electrical properties of the film. This was believed to result from a reduction in the dislocation-related non-radiative recombination centers or certain other defects due to the isoelectronic Al-doping.

• Journal of the Korean institute of surface engineering
• /
• v.32 no.3
• /
• pp.307-311
• /
• 1999

The well-crystalline hydroxyapatite($Ca_{10}(PO_4)_6(OH)_2$ ; HAp) layer having a biocompatibility was successfully coated onto titanium substrate using a radio-frequency magnetron sputtering, and effects of sputtering gas and the thickness of HAp film on a crystal growth of the HAp layers were investigated. The deposition rate of the layer sputtered with water-vapour gas was slower than that of the layer sputtered with argon gas. The results of X-ray diffraction demonstrated that the about $0.8\mu\textrm{m}$ thick HAp film under water-vapour gas was an amorphous phase, the about $1.2\mu\textrm{m}$ thick film was (100) plane-oriented HAp, and the about $1.5\mu\textrm{m}$ thick film was (001)plane-oriented HAp. FT-IR analysis proved that hydroxyl group of the layer sputtered with argon gas was defected, but that of the layer sputtered with water-vapour gas was not defected. From these results, it was favorable to use water-vapour gas on the HAp coatings onto metal surface.