• Title/Summary/Keyword: Density functional calculation

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Tautomerism of Cytosine on Silver, Gold, and Copper: Raman Spectroscopy and Density Functional Theory Calculation Study

  • Cho, Kwang-Hwi;Joo, Sang-Woo
    • Bulletin of the Korean Chemical Society
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    • v.29 no.1
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    • pp.69-75
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    • 2008
  • Tautomerism of pyrimidine base cytosine has been comparatively examined on nanoparticle and roughened plate surfaces of silver, gold, and copper by surface-enhanced Raman scattering (SERS). The SERS spectrum was found to be different depending on the metals and their substrate conditions suggesting the dissimilar population of various tautomers of cytosine on the surfaces. The ab initio calculations were performed at the levels of B3LYP, HF, and MP2 levels of theory with the LanL2DZ basis set to estimate the energetic stability of the tautomers with the metal complexes as well as the gas phase state. The amino group and N3-coordinated tautomer was predicted to be more favorable for bonding to Au, whereas the hydroxyl and N1-coordinated zwitter ionic form is most stable with Ag and Cu as a bidentate form from the DFT calculation. The binding energy with the Ag atom is calculated to be smaller than those with the Au and Cu atoms in line with the temperature-dependent SERS spectra of cytosine.

Structural Study of Oxygen Vacancy in CaO Stabilized Cubic-HfO2 Using Density Functional Theory (Density Functional Theory를 이용한 CaO 안정화 Cubic-HfO2의 산소 공공 구조 연구)

  • Kim, Jong-Hoon;Kim, Dae-Hee;Lee, Byeong-Eon;Hwang, Jin-Ha;Kim, Yeong-Cheol
    • Korean Journal of Materials Research
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    • v.18 no.12
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    • pp.673-677
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    • 2008
  • Calcia (CaO) stabilized cubic-$HfO_2$ is studied by density functional theory (DFT) with generalized gradient approximation (GGA). When a Ca atom is substituted for a Hf atom, an oxygen vacancy is produced to satisfy the charge neutrality. The lattice parameter of a $2{\times}2{\times}2$ cubic $HfO_2$ supercell then increases by $0.02\;{\AA}$. The oxygen atoms closest to the oxygen vacancy are attracted to the vacancy as the vacancy is positive compared to the oxygen ion. When the oxygen vacancy is located at the site closest to the Ca atom, the total energy of $HfO_2$ reaches its minimum. The energy barriers for the migration of the oxygen vacancy were calculated. The energy barriers between the first and the second nearest sites, the second and the third nearest sites, and the third and fourth nearest sites are 0.2, 0.5, and 0.24 eV, respectively. The oxygen vacancies at the third and fourth nearest sites relative to the Ca atom represent the oxygen vacancies in undoped $HfO_2$. Therefore, the energy barrier for oxygen migration in the $HfO_2$ gate dielectric is 0.24 eV, which can explain the origin of gate dielectric leakage.

Interaction of Hf precursor with adsorbed hydroxyl on Si (001)-$(2\times1)$ surface using density functional theory (Density functional theory를 이용한 $H_2O$가 흡착된 Si(001)-$(2\times1)$ 표면과 Hf precursor의 상호작용)

  • Kim, Dae-Hyun;Oh, Hyun-Chul;Kim, Dae-Hee;Baek, Seung-Bin;Seo, Hwa-Il;Kim, Yeong-Cheol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.109-110
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    • 2008
  • We have performed a density functional theory study to investigate the reaction of the $HfCl_4$ molecule on $H_2O$ terminated Si (001)-$(2\times1)$ surface. The reaction of the $HfCl_4$ molecule is more favorable on OH-terminated site than H-terminated site. The first $HfCl_4$ molecule is adsorbed on a OH-terminated site with 0.21 eV energy benefit. The second $HfCl_4$ molecule is adsorbed on the most adjacent OH-terminated site of the first molecule and the energy benefit is 0.28 eV. The third and forth molecules have same tendency with the first and second ones. The adsorption energies of the fifth and sixth $HfCl_4$ molecules are 0.01 eV, -0.06 eV respectively. Therefore, we find that the saturation Hf coverage is approximately 5/8 of the available hydroxyl site, which is $2.08\times10^{14}/cm^2$. Our model is well matched with an experimental study by reference.

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Structural study of oxygen vacancy in CaO stabilized cubic-$HfO_2$ using density functional theory (Density Functional Theory를 이용한 CaO 안정화 Cubic-$HfO_2$의 산소 공공 구조연구)

  • Kim, Jong-Hoon;Kim, Dae-Hee;Lee, Byeong-Eon;Kim, Yeong-Cheol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.293-294
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    • 2008
  • CaO stabilized cubic-$HfO_2$ is studied by using Density Functional Theory with GGA. When a Ca atom is substituted for a Hf atom, an oxygen vacancy is produced to satisfy the charge neutrality condition. When the oxygen vacancy is located at the first nearest site from the Ca atom, the total energy of $HfO_2$ is the most favorable. We calculate the energy barriers for the oxygen vacancy migration. The energy barriers between the first and the second nearest sites, the second and the third nearest sites, and the third and fourth nearest sites are 0.2, 0.5, 0.24 eV, respectively. The oxygen vacancies at the third and fourth nearest sites from the Ca atom represent the oxygen vacancies in undoped $HfO_2$. Therefore, the energy barrier for oxygen migration in $HfO_2$ gate dielectricis is 0.24eV, which can explain a leakage origin of gate dielectric.

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Indium Nanowire Growth on Si (001) Surface Using Density Functional Theory (Density Functional Theory를 이용한 Si (001) 표면 위의 In 나노선 성장 연구)

  • Kim, Dae-Hyun;Kim, Dae-Hee;Seo, Hwa-Il;Kim, Yeong-Cheol
    • Korean Journal of Materials Research
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    • v.19 no.3
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    • pp.137-141
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    • 2009
  • Density functional theory was utilized to investigate the growth of an indium nanowire on a Si (001) buckled surface. A site between the edge of two Si dimers is most favorable when the first In atom is adsorbed on the surface at an adsorption energy level of 2.26 eV. The energy barriers for migration from other sites to the most favorable site are low. When the second In atom is adsorbed next to the first In atom to form an In dimer perpendicular to the Si dimer row, the adsorption energy is the highest among all adsorption sites. The third In atom prefers either of the sites next to the In dimer along the In dimer direction. The fourth In atom exhibited the same tendency showed by the second atom. The second and fourth In adsorption energy levels are higher than the first and third levels as the In atoms consume the third valence electron by forming In dimers. Therefore, the In nanowire grows perpendicular to the Si dimer row on the Si (001) surface, as it satisfies the bonding of the three valence electrons of the In atoms.

Structural study of interface layers in orthorhombic-NiSi (010)/Si using density functional theory (Density Functional Theory를 이용한 orthorhombic-NiSi (010)/Si 계면 층의 구조 연구)

  • Kim, Dae-Hee;Kim, De-Hyun;Seo, Hwa-Il;Kim, Yeong-Cheol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.107-108
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    • 2008
  • We calculated orthorhombic-NiSi (010)/Si superstructure. Orthorhombic-NiSi was changed to tetragonal structure to be matched with Si substrate. Eight models were produced by the type of Si substrate. In the case of orthorhombic-NiSi (010)/Si (020)[00-1], it was the most favorable energetically and the shortest of the distance between two superstructures. However, in the case of orthorhombic-NiSi (010)/Si (010)[00-1], it was the most unfavorable energetically and the longest of the distance. The energy and distance of orthorhombic-NiSi (010)/Si superstructure were changed by the coordination number of Ni atom and the bond length of atom-atom at the interface.

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A Density Functional Study of Furofuran Polymers as Potential Materials for Polymer Solar Cells

  • Xie, Xiao-Hua;Shen, Wei;He, Rong-Xing;Li, Ming
    • Bulletin of the Korean Chemical Society
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    • v.34 no.10
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    • pp.2995-3004
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    • 2013
  • The structural, electronic, and optical properties of poly(3-hexylthiophene) (P3HT) have been comprehensively studied by density functional theory (DFT) to rationalize the experimentally observed properties. Rather, we employed periodic boundary conditions (PBC) method to simulate the polymer block, and calculated effective charge mass from the band structure calculation for describing charge transport properties. The simulated results of P3HT are consistent with the experimental results in band gaps, absorption spectra, and effective charge mass. Based on the same calculated methods as P3HT, a series of polymers have been designed on the basis of the two types of building blocks, furofurans and furofurans substituted with cyano (CN) groups, to investigate suitable polymers toward polymer solar cell (PSC) materials. The calculated results reveal that the polymers substituted with CN groups have good structural stability, low-lying FMO energy levels, wide absorption spectra, and smaller effective masses, which are due to their good rigidity and conjugation in comparison with P3HT. Besides, the insertion of CN groups improves the performance of PSC. Synthetically, the designed polymers PFF1 and PFF2 are the champion candidates toward PSC relative to P3HT.

DFT Studies on Hydrogen Bonding in Water Complexes of Amino-substituted Pyridine (아미노 치환 피리딘-물 착화합물의 수소결합에 대한 DFT 연구)

  • Gab-Yong Lee;Ok-Ju Kim
    • Journal of the Korean Chemical Society
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    • v.47 no.2
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    • pp.96-103
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    • 2003
  • Density Functional Theory(DFT) calculations are performed to estimate the hydrogen bonding interaction energies in pyridine-water and amino-substituted pyridine-water complexes. Some equilibrium properties are also obtained for these complexes at B3LYP/aug-cc-pVDZ level. It is shown that the amino substitution increases the proton affinity of pyridine and stabilizes the hydrogen bond. The degree of stabilization upon formation of the complex varies with the number and the position of the amino groups.

Structural Study of Interface Layers in Tetragonal-NiSi (010)/Si using Density Functional Theory (밀도범함수를 이용한 정방정계-NiSi (010)/Si 계면 층의 구조 연구)

  • Kim, Dae-Hee;Kim, Dae-Hyun;Seo, Hwa-Il;Kim, Yeong-Cheol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.5
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    • pp.377-381
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    • 2009
  • Tetragonal-NiSi (010)/Si superstructures were calculated for studying the interface structure using density functional theory, The orthorhombic-NiSi was changed to the tetragonal-NiSi to be matched with the Si surface for epitaxy interface. The eight interface models were produced by the type of the Si surfaces, The tetragonal-NiSi (010)/Si (020)[00-1] superstructure was energetically the most favorable, and the interface thickness of this superstructure was the shortest among the tetragonal-NiSi (010)/Si superstructures. However, in the case of tetragonal-NiSi (010)/Si (010)[00-1] superstructure, it was energetically the most unfavorable, and the interface thickness was the longest. The energies and interface thicknesses of tetragonal-NiSi (010)/Si superstructures were influenced by the coordination number of Ni atoms and the bond length between atoms located at the interface.

Halide (Cl-, Br-, I-) Influence on the Electronic Properties of Macrocyclic Nickel(II) Complexes: Ab-initio DFT Study

  • Zarei, Seyed Amir;Akhtari, Keivan;Hassanzadeh, Keyumars;Piltan, Mohammad;Saaidpour, Saadi;Abedi, Marjan
    • Journal of the Korean Chemical Society
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    • v.57 no.3
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    • pp.311-315
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    • 2013
  • The geometry structures of hexa-coordinated [NiLX]X complexes ($X=Cl^-,\;Br^-,\;I^-$) {L = 8,9,18,19-tetrahydro-7H,17H-dibenzo[f,o] [1,5,9,13]dioxadiaza cyclohexadecine-8,18-diol} are optimized by density functional theory (DFT) using B3LYP/LANL2DZ. The calculated geometric parameters are in good agreement with the corresponding experimental values. Calculation results about these complexes show that dipole moment decreases, and the energy levels of HOMOs descend from iodo-complex to chloro-complex. The energy levels of HOMOs descend gently from iodo-complex to chloro-complex, while the energy levels of LUMOs in the present complexes are almost similar; therefore the energy gapes between HOMOs and LUMOs increased from iodo-complex to chloro-complex.