• Korean Journal of Materials Research
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• v.19 no.1
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• pp.37-43
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• 2009

Silicon dioxide as gate dielectrics was grown at $400^{\circ}C$ on a polycrystalline Si substrate by inductively coupled plasma oxidation using a mixture of $O_2$ and $N_2O$ to improve the performance of polycrystalline Si thin film transistors. In conventional high-temperature $N_2O$ annealing, nitrogen can be supplied to the $Si/SiO_2$ interface because a NO molecule can diffuse through the oxide. However, it was found that nitrogen cannot be supplied to the Si/$SiO_2$ interface by plasma oxidation as the $N_2O$ molecule is broken in the plasma and because a dense Si-N bond is formed at the $SiO_2$ surface, preventing further diffusion of nitrogen into the oxide. Nitrogen was added to the $Si/SiO_2$ interface by the plasma oxidation of mixtures of $O_2/N_2O$ gas, leading to an enhancement of the field effect mobility of polycrystalline Si TFTs due to the reduction in the number of trap densities at the interface and at the Si grain boundaries due to nitrogen passivation.

• Journal of the Korea Institute of Building Construction
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• v.23 no.5
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• pp.559-570
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• 2023

The corrosion of structural steel used in the construction industry is increasing due to the industrialization where many aggressive ions released in the atmosphere. Therefore, in the present study Al coating was deposited by arc and plasma arc thermal spray process and compared their effectiveness in simulated weathering condition i.e. Society of Automotive Engineers(SAE) J2334 solution which mostly contain Cl^- and CO₃^2- ions. Different analytical techniques have been used to characterize the coating and draw the corrosion mechanism. The Al coating deposited by plasma arc thermal spray process exhibited uniform, dense and layer by layer deposition resulting higher bond adhesion values. The open circuit potential(OCP) of Al coating deposited this process is exhibited more electropositive values than arc thermal spray process in SAE J2334 solution with immersion periods. The total impedance of plasma arc thermal spray process exhibited higher than arc thermal spray process. The corrosion rate of the plasma arc thermal sprayed Al coating is reduced by 20% compared to arc thermal spray process after 23 days of immersion in SAE J2334 solution.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.375-379
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• 2014

Nanocrystalline TiAlN coatings were prepared by reactively sputtering TiAl metal target with $N_2$ gas. This was done using a magnetron sputtering system operated in DC and ICP (inductively coupled plasma) conditions at various power levels. The effect of ICP power (from 0 to 300 W) on the coating microstructure, corrosion and mechanical properties were systematically investigated using FE-SEM, AFM and nanoindentation. The results show that ICP power has a significant influence on coating microstructure and mechanical properties of TiAlN coatings. With increasing ICP power, the coating microstructure evolved from the columnar structure typical of DC sputtering processes to a highly dense one. Average grain size of TiAlN coatings decreased from 15.6 to 5.9 nm with increasing ICP power. The maximum nano-hardness (67.9 GPa) was obtained for the coatings deposited at 300 W of ICP power. The smoothest surface morphology (Ra roughness 5.1 nm) was obtained for the TiAlN coating sputtered at 300 W ICP power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.10-13
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• 2000

The notching effect in etching of un doped amorphous silicon gate had different characteristics and mechanism comparing with reported ones. The undoped amorphous silicon was etched by using HBr gas plasma, First, in the region of small line width, the potential was increased as a result of ions in the exposed surface of oxide, and the incident ions between the small line width were deflected more wide range, therefore the depth of notching was shallow and wide, Second, in the region of large line width of gate, electrons were charged on the top of photoresist and the side of gate, a part of ions deflected, The deflected ions were locally charged positive on the side of gate, and then the potential difference was produced, therefore, ions stored up more at independent line than at dense line, and nothing became deeper by Br ion bombardment.

• Journal of the Korean Ceramic Society
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• v.55 no.2
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• pp.178-184
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• 2018

In the present study, $TiB_2-Co$ composite coatings were thermally sprayed onto the surface of a 304 stainless steel substrate using an atmospheric plasma spray (APS). The phase analysis of the powders and plasma-sprayed coatings was performed using X-ray diffractometry analysis. The microstructures of the coatings were studied by a scanning electron microscope (SEM). The average particle size and flowability of the feedstocks were also measured. Both $TiB_2-32Co$ and $TiB_2-45Co$ (wt.%) coatings possessed typical dense lamellar structures and high-quality adhesion to the substrate. The oxidation behaviors of the coatings were studied at $900^{\circ}C$ in an atmospheric environment. In addition, the cross-sectional images of the oxidized coatings were analyzed by SEM. A thin and well-adhered layer was formed on the surface of both $TiB_2-Co$ coatings, confirming satisfactory high-temperature oxidation resistance. The kinetic curves corresponding to the isothermal oxidation of the coatings illustrated a short transient stage from rapid to slow oxidation during the early portion of the oxidation experiment.

• Korean Journal of Materials Research
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• v.17 no.3
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• pp.132-136
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• 2007

Oxidation resistance of sintered ${\beta}-FeSi_{2}$ was investigated at intermediate temperature range in air atmosphere. Fully dense and porous bodies of ${\beta}-FeSi_{2}$ samples were fabricated by using the Spark Plasma Sintering (SPS). They were annealed at $900^{\circ}C$ for 5days to obtain ${\beta}-FeSi_{2}$ phase. The bulk samples were oxidized at $800,\;900\;and\;950^{\circ}C$ in air atmosphere. The high temperature oxidation tests reveal that amorphous $SiO_{2}$ layer, similar to Si was formed and grew parabolically on ${\beta}-FeSi_{2}$. Accelerated oxidation is not observed as well as cracks and grain boundary oxidation. Granular ${\varepsilon}-FeSi$ was developed below the oxide layer as a result of oxidation of ${\beta}-FeSi_{2}$. Oxidation resistance of sintered ${\beta}-FeSi_{2}$ was excellent for high-temperature thermoelectric application.

• Korean Journal Plant Pathology
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• v.10 no.2
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• pp.83-91
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• 1994

Stem tissues of tomato plants (cv. Kwanyang) inoculated with Phytophthora capsici were examined by light and electron microscopy to compare early cytological differences between comaptible and incompatible interactions of tomatoes with the fungus. Twenty four hours after inoculation, the compatible isolate S 197 colonized severely the epidermis, cortex, and xylem vessels of stem tissue, whereas only few fungal cells colonized the stem tissues inoculated with the incompatible isolate CBS 178.26. Fragmented plasma membrane, distorted chloroplast, degraded cell wall, remnants of host cytoplasm were early ultrastructural features of the damaged host cell observed both in the compatible and incompatible interaction, a number of vesicles were distributed in the space between fungal cell walls and plasma membrane. The degradation of host cell walls by P. capsici was more pronounced in the compatible than the incompatible interactions. The incompatible interactions of tomato cells with P. capsici were characterized by formation of host cell wall apposition in the cortical parenchyma cells, indicating that the apposition of electron-dense material from the host cell walls may function as a plant defense reaction to the fungus. The fungal cells encased by wall appositions had abnormal cytoplasm and separated plasma membranes. The haustorium which formed from the fungal hyphae did not further penetrate through the host wall apposition and cytoplasmic aggregation, especially in the incompatible reactions. In contrast, the haustorium of the compatible isolate S 197 was not encased by wall appositions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.651-657
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• 2000

The notching effect in etching of undoped amorphous silicon gate had different characteristics and mechanism comparing with reported ones. The undoped amorphous silicon was etched by using HBr gas plasma. First in the region of small line width the potential increased as a result of ions in the exposed surface of oxide and the incident ions between the small line widths were deflected more wide range therefore the depth of notching was shallow and wide. Second in the region of large line width of gate electrons were charged on the top of photoresist and the side of gate a part of ions deflected. The deflected ions were partly charged positive on the side of gate and then these partly charged ions produced potential difference. Therefore ions stored up more at independent line than at dense line and notching became deeper by Br ion bombardments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.516-521
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• 2016

Mo-Cu alloys have been widely used for heat sink materials, vacuum technology, automobile, and many other applications due to their excellent physical and electric properties. Especially, Mo-Cu composites with 5 ~ 20 wt.% copper are widely used for the heavy duty service contacts due to their excellent properties like low coefficient of thermal expansion, wear resistance, high temperature strength, and prominent electrical and thermal conductivity. In most of the applications, highly-dense Mo-Cu materials with homogeneous microstructure are required for better performance. In this study, Mo-Cu alloys were prepared by PBM (planetary ball milling) and SPS (spark plasma sintering). The effect of Cu with contents of 5~20 wt.% on the microstructure and thermal properties of Mo-Cu alloys was investigated.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.11
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• pp.1600-1604
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• 2017

Mo-Cu alloys have been widely used for heat sink materials, vacuum technology, automobile and many other applications due to their excellent physical and electronic properties. Especially, Mo-Cu composites with 5~20 wt% copper are widely used for the heavy duty service contacts due to their excellent properties like low coefficient of thermal expansion, wear resistance, high temperature strength and prominent electrical and thermal conductivity. In most of the applications, high dense Mo-Cu materials with homogeneous microstructure are required for high performance, which has led in turn to attempts to prepare ultra-fine and well-dispersed Mo-Cu powders in different ways, such as spray drying and reduction process, electroless plating technique, mechanical alloying process and gelatification-reduction process. However, most of these methods were accomplished at high temperature (typically degree), resulting in undesirable growth of large Cu phases; furthermore, these methods usually require complicated experimental facilities and procedure. In this study, Mo-Cu alloying were prepared by planetary ball milling (PBM) and spark plasma sintering (SPS) and the effect of Cu with contents of 5~20 wt% on the microstructure and properties of Mo-Cu alloy has been investigated.