• Journal of Korean Vacuum Science & Technology
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• 제2권2호
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• pp.97-100
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• 1998

We have investigated the effects of crystalline activation on solid phase crystallization (SPC) of amorphous silicon (a-Si) thin films. Wet blasting and self ion implantation were employed as the activation treatments to induce macro or micro crystalline damages on deposited a-Si films. Low temperature and larger grain crystallization were obtained by the applied two-step activation. High degree of crystallinity was also observed on both furnace and rapid SPC. crystalline activations showed the promotion of nucleation on the activated regions and the retardation of growth in an amorphous matrix in SPC. The observed behavior of two-step SPC was strongly dependent on the applied activation and annealing processes. It was also found that the diversified effects by macro and micro activations on the SPC were virtually diminished as the annealing temperature increased.

• Journal of Electrochemical Science and Technology
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• 제8권1호
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• pp.69-76
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• 2017

Crystallization of one-dimensional porous tin oxide during the anodic oxidation of tin at ambient temperatures is reported. Remarkable crystallinity is achieved when a substrate with a high elastic modulus (e.g., silicon) is used and the tin coating on it is very thin. It is suggested that the compressive stress applied to the anodic tin oxide during the anodization process is the key factor affecting the degree of crystallinity. The measured value of the stress generated during anodization matches well with the range of the most favorable theoretical pressure (stress) for crystallization.

• 한국세라믹학회지
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• 제27권4호
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• pp.521-528
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• 1990

Li2O.2SiO2 glass-ceramics were made from the melt by the nucleation and growth treatment. The optimum nucleation temperature and time were determined from DTA curves of as-quenched and thermally treated glasses, and found to be 44$0^{\circ}C$ and 3hrs. The optical microscopic technique was also used to support this result. The volume fractions of crystals present in the partially crystallized specimens were measured using the optical microscopy and the amorphous X-ray scattering methods. The degree of crystallization increased with increasing the crystallization temperature and time. The crystalline phase identified by X-ray diffraction was lithium disilicate. As the crystallinity increased up to 95%, the transmittance of glass-ceramics was decreased linearly. It was also found that for the same heat treatment condition (575$^{\circ}C$, 30min), a thicker specimen showed higher transmittance, presumably due to less crystallinity.

• 한국결정성장학회지
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• 제13권2호
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• pp.93-97
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• 2003

FALC(Field-Aided Lateral Crystallization) 공정에서 요구되는 a-Si의 결정화는 인가한 전계(electric field)의 세기와 방향에 의존한다. 본 연구에서는 유한요소법을 적용하여 실제 패턴을 간단하게 모델링한 형상에 각 물질의 전도도를 대입하고, 전안을 가해 그 결과로 발생하는 전계의 분포를 계산하였다. 전계는 (-)극 주위에서 전극의 양쪽 모서리 부근이 가운데 부분보다 더 높게 나타났고 그 방향은 전극과 50~$60^{\circ}$를 이루는 대각선 방향이었다. 또한 예상한대로 크기가 작은 패턴이 큰 패턴보다 더 큰 전계 값을 가지는 것으로 나타났다.

• 한국산학기술학회논문지
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• 제17권12호
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• pp.737-742
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• 2016

태양 전지에 사용되는 봉지재는 EVA (ethylene vinylacetate copolymer)가 주로 사용되고 있으나, 긴 경화시간 및 경화 시 사용되는 라디칼 개시제에 의한 열변성에 의한 문제점이 해결되지 않고 있다. 본 연구에서는 이 문제를 해결하기 위하여 에틸렌-프로필렌 공중합체를 봉지재로서 타당한가 조사하고자 하였다. 에틸렌/프로필렌 함량이 다른 다섯 종류의 시료를 대상으로 연구하였다. 시료들의 결정화 거동과 결정 구조를 관찰하기 위하여 시차주사열량계와 광각 x-선 회절 분석기를 사용하였다. 에틸렌의 함량이 높을수록 결정화도, 밀도 및 유리전이 온도 낮아지는 전형적인 결과를 보였다. 그러나 결정들의 용융 온도는 에틸렌 20.1 과 22.2 mol. % 인 경우가 제일 높은 특이한 결과를 보였는데 이는 중합 시 특수 촉매에 의한 블록 공중합체와 같은 구조 때문이었다. 이 때문에 에틸렌 함량이 제일 낮은 종류가 투명도가 높고 내열성이 우수하다는 것을 알 수 있었고 봉지재에 가장 적하는 결론을 내렸다. 또한 결정화 시간을 증가시킬수록 새로운 용융 피크가 생성되는 것을 볼 수 있었는데 이는 어닐링에 의해 새로운 결정 구조가 형성되기 때문인 것을 X선 회절 분석을 통하여 알 수 있었다.

• 한국결정성장학회지
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• 제20권6호
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• pp.272-277
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• 2010

화력발전소에서 배출된 석탄 바닥재(bottom ash, B/A)를 이용하여 결정화 유리를 제조하고 그 결정상, 미세구조 및 기계적 특성을 분석하였다. 먼저 바닥재의 용융점을 낮추기 위해 수식제로 $Li_2O$를 첨가하고 용융하여 유리를 제조하였다. 제조된 유리는 2단계 열처리 공정을 이용하여 결정화시켰다. 즉 핵형성을 위한 1차 열처리를 한 후 결정성장을 시키는 2차 열처리를 행함으로서 결정화도를 높이고자 하였다. 제조원 결정화유리에는 주 결정상으로 ${\beta}$-spodumene상이 그리고 부차적인 상으로 $Li_2SiO_3$이 생성되었다. 결정화된 시편의 결정화도는 2차 열처리 공정의 유지시간이 길수록 증가하였다. 유지시간이 3시간 이하일 때의 시편의 미세구조는 결정화가 완전히 일어나지 않았고 불균일한 형상을 보였으며 또한 9시간 이상이 되면 시편 내부에 균열이 발생하였으며, 이로 인하여 기계적 강도가 감소하였다. 결론적으로 시편의 결정화도가 우수하고, 미세구조가 균일하면서 기계적 강도값이 가장 높은 물성을 갖는 유리상의 제조가 가능한 조건을 얻을 수 있었다.

• 공업화학
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• 제8권3호
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• pp.389-394
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• 1997

경각형 결정화에 의하여 벤젠-사이클로헥산 혼합물로부터 벤젠의 결정화에서 결정에 내포된 불순물(사이클로헥산)의 분포가 조사되었다. 결정의 순도에 미치는 결정성장속도의 영향을 파악하였으며 모든 실험결과는 Wintermantel 모델에 의해 도시될 수 있었다. 결정의 순도는 과냉각 정도가 클수록, 주입조성이 낮을 수록, 결정성장속도가 클 수록 낮았으며 결정성장속도는 불순물의 내포를 지배하는 가장 중요한 변수이다. 결정화 초기에 형성된 결정은 불순물을 많이 내포하고 있으며 결정의 두께가 증가함에 따라 불순물은 잔여용융액쪽으로 이동되어 배제됨을 알 수 있었다. 경막결정화에서 결정에 내포된 불순물은 일정두께의 결정층에 온도구배를 이용하여 결정을 부분용해시키면 불순물의 확산에 의하여 제거될 수 있음을 알 수 있었다.

• 한국염색가공학회지
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• 제16권4호
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• pp.1-9
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• 2004

In recent, development of nano fiber has been one of the most active subjects in the world. Nano fiber is defined as a ultra fine yarn with a diameter unit of $10-100\times10^{-9}meter$, which is possible to be produced by an electro-spinning technology. In this study, physical characteristics and dyeing properties of nylon 66 nano fiber were investigated. Nylon 66 nano fiber was dyed with levelling type acid dyes. X-ray diffraction method and DSC analysis were used for the measurement of the degree of crystallization. Analysis of amino end groups was also performed in order to examine a relationship between number of amino groups and its dyeing property as well as water absorption behavior. The maximum exhaustion % of dyes and dyeing rate under various dyeing conditions, such as dyeing temperature and pH in dye bath, along with build-up properties for 2 acid dyes were evaluated. It was found that the degree of crystallization of nano fiber was smaller than that of regular fiber, and amino end groups of nano fiber were less than regular fiber. Half dyeing time of nano fiber was shorter than regular fiber because of the bigger specific surface area. Effect of pH on exhaustion % was small in case of nano fiber. Exhaustion of nano fiber increased with higher concentration of dye.

• Journal of Pharmaceutical Investigation
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• 제13권1호
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• pp.1-9
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• 1983

The effect of humidity on crystallization and polymorphic transformation of hydrous aluminum oxide under various humidity at $37^{\circ}$ was examined by means of X-ray diffraction, scanning electron micrograph, IR spectra and DTA. The humidity was an important factor influencing crystallization of hydrous aluminum oxide. The growth or crystal was strongly accelerated by humidity. The aging process is assumed that it is composed of two seperate steps, an increase of the diffraction around $36{\sim}42^{\circ}$, and an appearance and its development of the peak at $18{\sim}20^{\circ}$ of $2{\theta}$ value. The former is considered to be nucleation and the latter correspond to the growth period on crystallization. The crystalline form of aging products was various depending on the degree of humidity, directly it leads to the eventual formation of bayerite in more than 72%, $b{\"{o}}hmite$ in 50% and resembled to Nordstandite in 0% relative humidity, respectively but once formed, it was mostly stable in each surroundings and does not transform to the other more stable form in solid state even after aging for five years. The mechanism responsible for aging is further polymerization process of six-membered rings by deprotonation-dehydration reaction in which positively charged polynuclear hydroxy aluminum complexes formed in the presence of moisture are joined at their edges by double hydroxide bridges.

• 한국전기전자재료학회논문지
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• 제34권2호
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• pp.99-104
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• 2021

Ion-beam sputtering (IBS) was used to deposit semiconducting IZTO (indium zinc tin oxide) thin films onto heavily-doped Si substrates using a sintered ceramic target with the nominal composition In0.4Zn0.5Sn0.1O1.5, which could work as a channel layer for oxide TFT (oxide thin film transistor) devices. The crystallization behavior and electrical properties were examined for the films in terms of deposition parameters, i.e. target tilt angle and substrate temperature during deposition. The thickness uniformity of the films were examined using a stylus profilometer. The observed difference in electrical properties was not related to the degree of crystallization but to the deposition temperature which affected charge carrier concentration (n), electrical resistivity (ρ), sheet resistance (Rs), and Hall mobility (μH) values of the films.