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Computer simulation of electric field distribution in FALC process  

정찬엽 (한양대학교 세라믹공학과, CPRC)
최덕균 (한양대학교 세라믹공학과, CPRC)
정용재 (한양대학교 세라믹공학과, CPRC)
Abstract
The crystallization behavior of amorphous silicon is affected by direction and intensity of electric field in FALC(Field-Aided Lateral Crystallization). Electric field was calculated in a simplified model using conductivity data of Mo, a-Si, $SiO_2$and boundary conditions for electric potential at the electrodes. The magnitude of electric field intensity in each corner of cathode was much larger than that in the center of patterns, and the electric field direction was 50~60 degree outside to cathode. And electric field intensity at a relatively small pattern was larger than that of a large pattern.
Keywords
FALC (field-aided lateral crystallization); TFT (thin film transistor); Mo electrode; FEM (finite element method); Electric field distribution;
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[ Jae-Bok Lee ] / Ph.D. dissertation, Hanyang UIniversity
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