• 제목/요약/키워드: Defect Phenomena

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CAPD기법을 이용한 부분방전 현상 해석에 관한 연구 (Analysis of Partial Discharge Phenomena by means of CAPD)

  • 김성홍
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.939-944
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    • 2002
  • PD phenomena can be regarded as a deterministic dynamical process where PD should be occurred if the local electric field be reached to be sufficiently high. And thus, its mathematical model can be described by either difference equations or differential equations using several state variables obtained from the time sequential measured data of PD signals. These variables can provide rich and complex behavior of detectable time series, for which Chaos theory can be employed. In this respect, a new PD pattern recognition method is proposed and named as 'Chaotic Analysis of Partial Discharges (CAPD)' for this work. For this purpose, six types of specimen are designed and made as the models of the possible defects that may cause sudden failures of the underground power transmission cables under service, and partial discharge signals, generated from those samples, are detected and then analyzed by means of CAPD. Throughout the work, qualitative and quantitative properties related to the PD signals from different defects are analyzed by use of attractor in phase space, information dimensions ($D_0$ and D2), Lyapunov exponents and K-S entropy as well. Based on these results, it could be pointed out that the nature of defect seems to be identified more distinctively when the CAPD is combined with traditional statistical method such as PRPDA. Furthermore, the relationship between PD magnitude and the occurrence timing is investigated with a view to simulating PD phenomena.

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집속이온빔장치와 주사전자현미경을 이용한 박막 트랜지스터 구조불량의 3차원 해석 (Three Dimensional Reconstruction of Structural Defect of Thin Film Transistor Device by using Dual-Beam Focused Ion Beam and Scanning Electron Microscopy)

  • 김지수;이석열;이임수;김재열
    • Applied Microscopy
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    • 제39권4호
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    • pp.349-354
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    • 2009
  • TFT-LCD의 구조불량이 발생한 박막 트랜지스터에 대해서 집속이온빔 가공장치(Dual-beam FIB/SEM)를 이용하여 연속절편법(Serial sectioning)과 일련의 연속적인 2차원 주사전자현미경 이미지를 얻었고, IMOD 소프트웨어를 통해서 3차원 구조구현(3D reconstruction) 연구를 하였다. 3차원 구조구현 결과, Gate막과 Data막이 접합되어 있는 불량이 관찰되었다. 두 막이 접합되어서 ON/OFF 역할을 하는 Gate의 기능이 상실되었고, Data신호는 Drain을 통해서 투명전극에 전류를 공급하여 계속 빛나는 선 불량(line defect)이 발생한 것으로 판단된다. 이 논문의 결과인 집속이온빔 가공장치(Dual-Beam FIB/SEM)를 이용한 3차원 구조구현 연구와 연속절편법, 주사전자현미경 이미지작업, 이미지 프로세싱에 대한 결과는 향후 연구의 기초자료로 활용될 수 있을 것으로 판단된다.

마이크로 연소기에서 발생하는 열 소염과 화학 소염 현상 (II)- SiOx(x≤2) 플레이트의 물리, 화학적 성질이 소염에 미치는 영향 - (Thermal and Chemical Quenching Phenomena in a Microscale Combustor (II)- Effects of Physical and Chemical Properties of SiOx(x≤2) Plates on flame Quenching -)

  • 김규태;이대훈;권세진
    • 대한기계학회논문집B
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    • 제30권5호
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    • pp.405-412
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    • 2006
  • In order to realize a stably propagating flame in a narrow channel, flame instabilities resulting from flame-wall interaction should be avoided. In particular flame quenching is a significant issue in micro combustion devices; quenching is caused either by excessive heat loss or by active radical adsorptions at the wall. In this paper, the relative significance of thermal and chemical effects on flame quenching is examined by means of quenching distance measurement. Emphasis is placed on the effects of surface defect density on flame quenching. To investigate chemical quenching phenomenon, thermally grown silicon oxide plates with well-defined defect distribution were prepared. ion implantation technique was used to control defect density, i.e. the number of oxygen vacancies. It has been found that when the surface temperature is under $300^{\circ}C$, the quenching distance is decreased on account of reduced heat loss; as the surface temperature is increased over $300^{\circ}C$, however, quenching distance is increased despite reduced heat loss effect. Such abberant behavior is caused by heterogeneous surface reactions between active radicals and surface defects. The higher defect density, the larger quenching distance. This result means that chemical quenching is governed by radical adsorption that can be parameterized by oxygen vacancy density on the surface.

The roles of FADD in extrinsic apoptosis and necroptosis

  • Lee, Eun-Woo;Seo, Jin-Ho;Jeong, Man-Hyung;Lee, Sang-Sik;Song, Jae-Whan
    • BMB Reports
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    • 제45권9호
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    • pp.496-508
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    • 2012
  • Fas-associated protein with death domain (FADD), an adaptor that bridges death receptor signaling to the caspase cascade, is indispensible for the induction of extrinsic apoptotic cell death. Interest in the non-apoptotic function of FADD has greatly increased due to evidence that FADD-deficient mice or dominant-negative FADD transgenic mice result in embryonic lethality and an immune defect without showing apoptotic features. Numerous studies have suggested that FADD regulates cell cycle progression, proliferation, and autophagy, affecting these phenomena. Recently, programmed necrosis, also called necroptosis, was shown to be a key mechanism that induces embryonic lethality and an immune defect. Supporting these findings, FADD was shown to be involved in various necroptosis models. In this review, we summarize the mechanism of extrinsic apoptosis and necroptosis, and discuss the in vivo and in vitro roles of FADD in necroptosis induced by various stimuli.

수평필릿용접의 용접부 형상을 예측하기 위한 수학적 모델링 및 열전달 해석에 관한 연구 (A study on mathematical modeling and heat transfer analysis to predict weld bead geometry in horizontal fillet welding)

  • 문형순;나석주
    • Journal of Welding and Joining
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    • 제14권6호
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    • pp.58-67
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    • 1996
  • The horizontal filet welding is prevalently used in heavy and ship building industries to join the parts. The phenomena occurring in the horizonal fillet welding process are very complex and highly non-linear, so that its analysis is relatively difficult. Furthermore, various kinds of weld defect such as undercut, overlap, porosity. excess weld metal and incomplete penetration can be induced due to improper welding conditions. Among these defects, undercut, overlap and excess weld metal appear frequently in horizontal filet welding. To achieve a satisfactory weld bead geometry without weld defects, it is necessary to study the effect of welding conditions in the weld bead geometry. For analyzing the weld bead geometry with and without weld defects in horizontal fillet welding, a mathematical model was proposed in conjunction with a two-dimensional heat flow analysis adopted for computing the melting tone in . base metal. The reliability of the proposed model was evaluated through experiments. which showed that the proposed model was very effective for predicting the weld bead shape with or without weld defects in horizontal fillet welding.

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Cu(InGa)$Se_2$ 박막 제조시 OVC층의 증발시간에 따른 광변환효율 분석 (Efficiency Analysis with Deposition Time of OVC layer in Cu(InGa)$Se_2$ Films)

  • 김석기;이정철;강기환;윤경훈;박이준;송진수;한상옥
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 하계학술대회 논문집 C
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    • pp.1587-1589
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    • 2002
  • Photovoltaics is considered as one of the most promising new energy technology, because its energy source is omni present, pollution-free and inexhaustive. It is agreed that these solar cells must be thin film type because thin film process is cost-efficive in the fact that it uses much less raw materials and can be continuous. The defect chalcopyrite material $CuIn_3Se_5$ has been identified as playing an essential role in efficient photovoltaic action in $CuInSe_2$-based devicesm It has been reported to be of n-type conductivity, forming a p-n junction with its p-type counterpart CuInSe2. Because the most efficient cells consist of the $Cu(In,Ga)Se_2$ quarternary, knowledge of some physical properties of the Ga-containing defect chalcopyrite $Cu(In,Ga)_3Se_5$ may help us better understand the junction phenomena in such devices.

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Characterization of Planar Defects in Annealed SiGe/Si Heterostructure

  • Lim, Young-Soo;Seo, Won-Seon
    • 한국재료학회지
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    • 제19권12호
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    • pp.699-702
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    • 2009
  • Due to the importance of the SiGe/Si heterostructure in the fields of thermoelectric and electronic applications, SiGe/Si heterostructures have been extensively investigated. For practical applications, thermal stability of the heterostructure during the thermoelectric power generation or fabrication process of electronic devices is of great concern. In this work, we focused on the effect of thermal annealing on the defect configuration in the SiGe/Si heterostructure. The formation mechanism of planar defects in an annealed SiGe/Si heterostructure was investigated by transmission electron microscopy. Due to the interdiffusion of Si and Ge, interface migration phenomena were observed in annealed heterostructures. Because of the strain gradient in the migrated region between the original interface and the migrated interface, the glide of misfit dislocation was observed in the region and planar defects were produced by the interaction of the gliding misfit dislocations. The planar defects were confined to the migrated region, and dislocation pileup by strain gradient was the origin of the confinement of the planar defect.

Analysis of Partial Discharge Inception Voltages for the Wrong Positioning Defects in the Joint of Distribution Power Cables

  • Kim, Jeong-Tae;Kim, Dong-Uk;Lee, Young-Jo;Koo, Ja-Yoon
    • Journal of Electrical Engineering and Technology
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    • 제7권6호
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    • pp.977-982
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    • 2012
  • In order to find out partial discharge (PD) phenomena in the cable joint due to the poor workmanship during the installation, the relationship between PD inception voltages and joint defects was investigated. For the purpose, in the joint of 22.9kV CNCV cables, electric fields were calculated for various semiconductive layer wrong positioning (WP) defects. And, PDIV were investigated through the experiments and compared with the results of electric field analysis. In all WP defect cases, the PD inception field calculated using measured PDIVs was similarly shown to be the average value of 1.84kV/mm. In addition, the calculated PDIV and the measured PDIV were almost equal, from the PDIV calculation using maximum electric fields and the measured PDIV for the normal case. Throughout this study, it is possible to analyze WP defects due to the poor workmanship and to establish better joint design for the distribution grade extruded cable system.

초음파 열 영상 검사를 이용한 브레이징 접합 결함 검출 (A Brazing Defect Detection Using an Ultrasonic Infrared Imaging Inspection)

  • 조재완;최영수;정승호;정현규
    • 비파괴검사학회지
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    • 제27권5호
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    • pp.426-431
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    • 2007
  • 고에너지 초음파 여기 탄성파가 물체의 균열, 박리 등의 결함 부위를 통과할 때 서로 맞닿은 결함면은 균일하게 진동하지 않는다. 초음파 입사에 따른 결함 면 사이의 마찰(friction), 문지름 (rubbing) 또는 부딪침(clapping) 에 의해 진동 에너지가 결함 부위에서 국부적인 열로 변환된다. 이를 적외선 열 영상 카메라로 관측하면 구조물의 결함을 실시간으로 검출할 수 있다. 본 논문에서는 초음파 열 영상 검사를 이용한 인코넬 합금 박판의 브레이징 접합 결함 검출에 대해 기술한다. 2 kW 의 전력과 23 kHz 대역의 가진 주파수를 갖는 초음파 펄스를 280 ms 기간 동안 인코넬 합금의 브레이징 접합 박판에 입사시켰다. 브레이징 접합부의 결함위치 부근의 인코넬 합금 박판의 양면이 맞닿은 경계선에서 아주 밝은 국부적인 발열(핫 스팟)이 적외선 열 영상 카메라에 의해 관측되었으며 브레이징 접합 결함 위치에서도 미약한 열이 관측되었다. 배경 감산 평균 및 히스토그램 평활화 처리 등의 영상처리를 통해 브레이징 접합의 결함을 확인하였다.

사출성형에서 사출속도, 수지의 종류 및 금형 형상에 따른 젯팅 현상에 관한 고찰 (Investigation of the Jetting Phenomena in Injection Molding for Various Injection Speeds, Resins and Mold Shapes)

  • 류민영;최종근;배유리
    • 소성∙가공
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    • 제12권1호
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    • pp.3-10
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    • 2003
  • The formation of surface defects associated with Jotting in injection molding is related to the geometries of cavity and fate, operational conditions and the rheological properties of polymer. In this study we have examined jetting phenomena in injection molding process for the throe kinds of PCs which have different molecular weights and structures, PBT and PC/ABS alloy with several injection speeds. We have used various cavity shapes those are tensile, flexural and impact test specimens with various gates and cavity thicknesses. Through this study we have observed that the jetting is related to the dic swell of material. This means that the jotting is strongly affected by the elastic flow property rather than the viscous flow property in viscoelastic characteristics of molten polymer. Different resins have different elastic properties, and elastic flow behavior depends on the shear rate of flow, i.e. injection speed. Large die swell would eliminate jetting however, the retardation of die swell would stimulate jetting. In the point of mole design, reducing the thickness ratio of cavity to gate can reduce or eliminate jetting regardless of amount of elasticity of polymer melt.