• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1430-1432
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• 1997

A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. To reduce these effects of the grain boundaries, we investigated various influencing factors such as preferential chemical etching of grain boundaries, grid design, transparent conductive thin film, and top metallization along grain boundaries. Pretreatment in $N_2$ atmosphere and gettering by $POCl_3$ and Al were performed to obtain polycrystalline silicon of the reduced defect density. Structural, electrical, and optical properties of solar cells were characterized. Improved conversion efficiencies of solar cell were obtained by a combination of Al diffusion into grain boundaries on rear side, fine grid finger, top Yb metal grid on Cr thin film of $200{\AA}$ and buried contact metallization along grain boundaries.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1257-1261
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• 1994

Phsysical and dielectric properties of $(1-x)CaTiO_3-xLa(Zn_{1/2}Ti_{1/2})O_3$ ceramics were investigated at the temperature range of $25^{\circ}C$ to $80^{\circ}C$ at the frequency of 6 GHz. As increasing addition of the amount of $La(Zn_{1/2}Ti_{1/2})O_3$ to x = 5 mol,Q value was increased due to grain growth and increase of density. For more addition, Q value decreased due to electrical defect. Temperature coefficient of resonant frequency could be controlled by the amount of $La(Zn_{1/2}Ti_{1/2})O_3$, which could be explained by volume mixing rule.

• Journal of the Korean institute of surface engineering
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• v.37 no.3
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• pp.175-178
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• 2004

The size and number of nano-size defects of thin trivalent chrome layers were determined by small angle neutron scattering (SANS) without breaking the thin chrome layers. Most of defect size of the trivalent chromium prepared in this test conditions is in the range of about 40nm. The number of nano-size defects less than about 40nm of the trivalent chromium layer increases with plating voltage at constant current density From this study, SANS is proved as one of useful techniques to evaluate nano-size defects of thin film layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.13-16
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• 2000

Progress in Si crystal and wafer technologies is discussed on single crystal growth, wafer fabrication, epitaxial growth, gettering, 300 mm and SOI. As for bulk crystal growth, the mechanism of grown-in defects (voids) formation, the succes of grown-in defect free crystal growth technology and nitrogen doped crystal are shown. New wafer fabrication technologies such as both-side mirror polishing and etchingless process have been developed. The epitaxial growth of SiGe/Si heterostructure for high speed bipolar device is treated. Gettering technology under low temperature process such as RTP is important, and also it is shown that IG effect for Ni could be predicted using computer simulation of precipitate density and size. The development of 300 mm wafer and SOI has made progress steadily.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.2
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• pp.332-334
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• 2009

The magnetic properties in YBCO superconducting materials were studied. In the measurement of I-V properties, it was cleared that the mechanism of magnetic properties could not be explained by using conventional flux theory. By changing the density of external magnetic flux, changes in current voltage characteristics in which a superconducting material were also measured. The results showed that the magnetic flux is generated by a vortex current which circulates around the vortex with a sense of rotation opposite to that of the diamagnetic screening surface current. When the external magnetic field was applied to the superconducting magnetometer, some regions of the magnetometer will be destroyed, especially the weak link regions and the defect regions.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.559-566
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• 1995

Alumina powder was coated with stearic acid and then mixed with isotactic polypropylene, atactic polypropylene as binders at 15$0^{\circ}C$ for 2 hours. The mixture was then injection molded at various mold temperatures using injection molding machine to investigate the effect of the molding temperature and debinding parameters on the formation of the defects. The molded specimens were debinded in both air and nitrogen atmospheres. Wicking and solvent methods were also used to enhance debinding efficiency. The specimens were prefired at 120$0^{\circ}C$ and then sintered at 150$0^{\circ}C$ for 3 hours. Various defects were formed at mold temoperature of 3$0^{\circ}C$, 6$0^{\circ}C$ and 10$0^{\circ}C$ and any noticeable defect was not formed at 85$^{\circ}C$. The density of green body increased with mold temperature. Debinding in air atmosphere was more effective than in nitrogen atmosphere. Results also proved that wicking and solvent treatments helped minimize the number of defects.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.962-966
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• 1993

Effect of Fe content on the electrical properties of Zn2Y (Ba2Zn2Fe12O22) was studied by investigating X-ray diffraction patterns, microstructure and resistivity of samples. When x(Ba2Zn2Fe12＋xO$\delta$) is between ＋1 and -1, Zn2Y single phase was obtained and electrical resistivity was inversely proportional to Fe content. The possible defect model of Zn2Y was proposed based on the observation. When x<-1 or x>1, second phase(ZnFe2O4 for x<-1, ZnFe2O4 and Ba3Zn3Fe24O41 for x>1) were observed and the electrical resistivity was inversely proportional to the sample density. The activation energy of electrical conductivity of the stoichiometric Zn2Y was 0.49eV below 20$0^{\circ}C$ and 0.07eV above 50$0^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.28 no.3
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• pp.174-181
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• 1995

Multilayered silicon cantilever beams as interconnection systems for bare chip burn-in socket applications have been designed, fabricated and characterized. Fabrication processes of the beam are employing standard semiconductor processes such as thin film processes and epitaxial layer growth and silicon wet etching techniques. We investigated silicon etch rate in 1-3-10 etchant as functions of doping concentration, surface mechanical stress and crystal defects. The experimental results indicate that silicon etch rate in 1-3-10 etchant is strong functions of doping concentration and crystal defect density rather than surface mechanical stress. We suggested the new fabrication processes of multilayered silicon cantilever beams.

• Journal of the Korean institute of surface engineering
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• v.48 no.3
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• pp.126-130
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• 2015

A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films of a low defect density at a high deposition rate. To understand proper deposition conditions of ${\mu}c-Si:H$ films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multi-hollow discharge plasma CVD method. In this paper the substrate temperature dependence of ${\mu}c-Si:H$ film properties are demonstrated. The higher substrate temperature brings about the higher deposition rate, and the process window of device quality ${\mu}c-Si:H$ films becomes wider until $200^{\circ}C$. This is attributed to competitive reactions between Si etching by H atoms and Si deposition.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.215-216
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• 2006

To lower the cost of MIM products, the gate and runner materials and green parts with defects are usually recycled. It is necessary to understand what causes the recycled products to deteriorate. The results show that the viscosity of the 1R (recycled once) feedstock was slightly lower than that of the fresh material. However, as the number of recyclings increased, the viscosity increased, while the density decreased, and more defects were noticed duri ng solvent debinding. These deteriorations were mainly caused by the increase of the melting point of the backbone binder and the oxidation of the filler or paraffin wax.