• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1879-1883
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• 2018

We analyzed the deep-trap states of GaN/InGaN ultraviolet light-emitting diodes (UV LEDs) before and after electrical stress. After electrical stress, the light output power dropped by 5.5%, and the forward leakage current was increased. The optical degradation mechanism could be explained based on the space-charge-limited conduction (SCLC) theory. Specifically, for the reference UV LED (before stress), two sets of deep-level states which were located 0.26 and 0.52 eV below the conduction band edge were present, one with a density of $2.41{\times}10^{16}$ and the other with a density of $3.91{\times}10^{16}cm^{-3}$. However, after maximum electrical stress, three sets of deep-level states, with respective densities of $1.82{\times}10^{16}$, $2.32{\times}10^{16}cm^{-3}$, $5.31{\times}10^{16}cm^{-3}$ were found to locate at 0.21, 0.24, and 0.50 eV below the conduction band. This finding shows that the SCLC theory is useful for understanding the degradation mechanism associated with defect generation in UV LEDs.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.191.2-191.2
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• 2013

The negative photoconductivity was frequently observed in some semiconductors. It was known that the origin of the negative photoresponse from ZnO is molecular chemisorption or the charging effect of nanoparticles in bulk matrix. However, the origin of the negative photoresponse of thin film was not still clear. One of possible explanation is due to the deep level trap scheme, which describes the origin of the negative photoresponse via defect state under illumination of light. However, the defect states below Fermi level have high capture rate by Coulomb effect, so that these states are usually filled by electrons if the defect states have donor-like character. Therefore the condition which the defect states located in below Fermi level should be partially filled by electrons make more difficult to understand of mechanism of the negative photoresponse. In this study, n-ZnO/p-Si heterojunction diodes were fabricated by UHV RF magnetron sputter. Then, some diodes show the negative photoresponse under ultra-violet light illumination. The defect state of the ZnO was analyzed by photoluminescence and deep level transient spectroscopy. To interpret the negative photoconductivity, band diagram was simulated by using SCAPS program.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.718-722
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• 2006

The dependence of n-channel 2 shot SLS poly-Si TFT characteristics on the DOS (density of states) parameters was investigated by using a device simulation. Device performances were most sensitive to the DOS of poly-Si/gate insulator (GI) interface and poly-Si active layer. Deep level states at the poly-Si/GI interfaces strongly affect the subthreshold slope.

• Bulletin of the Korean Chemical Society
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• v.19 no.6
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• pp.628-634
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• 1998

The properties of the n-type impurities nitrogen and phosphorus in diamond have been investigated by means of electronic band structure calculations within the framework of the semiempirical extended Huckel tight-binding method. For diamond with the nitrogen and phosphorus substitutional impurities, calculated density of states shows the impurity level deep in the band gap. This property can be derived from the substantial <111> relaxation of the impurity and nearest-neighbor carbon atoms, which is associated with the population of an antibonding orbital between them. The passivated donor property of the P-vacancy complex which lies deep in the gap is also discussed.

• Structural Monitoring and Maintenance
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• v.4 no.3
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• pp.269-299
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• 2017

This paper presents a Level III damage evaluation methodology, which simultaneously, identifies the location, the extent, and the severity of stiffness damage in deep beams. Deep beams are structural elements with relatively high aspect (depth-to-length) ratios whose response are no longer based on the simplified Euler-Bernoulli theory. The proposed methodology is developed on the bases of the force-displacement relations of the Timoshenko beam theory and the concept of invariant stress resultants, which states that the net internal force existing at any cross-section of the beam is not affected by the inflicted damage, provided that the external loadings in the undamaged and damaged beams are identical. Irrespective of the aspect ratios, local changes in both the flexural and the shear stiffnesses of beam-type structures may be detected using the approach presented in this paper.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.199-205
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• 2010

The electrical properties and defect states in ZnO substrates were studied during high-energy electron beam irradiations. 1 MeV and 2 MeV electron-beam with dose of $1{\times}10^{16}$ electrons/$cm^2$ were irradiated on Zn-surface of the sample. In the sample irradiated by 1 MeV, the leakage current was increased by electron-beam induced surface defects, while the enhancement of on/off property and the decrease of leakage current appeared in the 2 MeV irradiated sample. From the deep level transient spectroscopy measurements for these samples, it showed that the defect states with the activation energies of $E_c$-0.33 eV and $E_v$+0.8 eV are generated during the high energy electron-beam irradiation. Especially, it considered that the $E_c$-0.33 eV state related with O-vacancy affects to their electrical properties.

• Journal of KIISE
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• v.44 no.6
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• pp.607-612
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• 2017

This paper presents an attempt to apply Deep Learning technology to solve the problem of forecasting floods in urban areas. We employ Recurrent Neural Networks (RNNs), which are suitable for analyzing time series data, to learn observed data of river water and to predict the water level. To test the model, we use water observation data of a station in the Trinity river, Texas, the U.S., with data from 2013 to 2015 for training and data in 2016 for testing. Input of the neural networks is a 16-record-length sequence of 15-minute-interval time-series data, and output is the predicted value of the water level at the next 30 minutes and 60 minutes. In the experiment, we compare three Deep Learning models including standard RNN, RNN trained with Back Propagation Through Time (RNN-BPTT), and Long Short-Term Memory (LSTM). The prediction quality of LSTM can obtain Nash Efficiency exceeding 0.98, while the standard RNN and RNN-BPTT also provide very high accuracy.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.15 no.4
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• pp.301-312
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• 2017

The concept of deep borehole disposal (DBD) for high-level nuclear wastes has been around for about 40 years. Now, the Department of Energy (DOE) in the United States (U.S.) is re-examining this concept through recent studies at Sandia National Laboratory and a field test. With DBD, nuclear waste will be emplaced in boreholes at depths of 3 to 5 km in crystalline basement rocks. Thinking is that these settings will provide nearly intact rock and fluid density stratification, which together should act as a robust geologic barrier, requiring only minimal performance from the engineered components. The Nuclear Waste Technical Review Board (NWTRB) has raised concerns that the deep subsurface is more complicated, leading to science, engineering, and safety issues. However, given time and resources, DBD will evolve substantially in the ability to drill deep holes and make measurements there. A leap forward in technology for drilling could lead to other exciting geological applications. Possible innovations might include deep robotic mining, deep energy production, or crustal sequestration of $CO_2$, and new ideas for nuclear waste disposal. Novel technologies could be explored by Korean geologists through simple proof-of-concept experiments and technology demonstrations.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.314-314
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• 2012

The dilute magnetic semiconductors (DMS) have been developed to multi-functional electro-magnetic devices. Specially, the Si based DMS formed by ion implantation have strong advantages to improve magnetic properties because of the controllable effects of carrier concentration on ferromagnetism. In this study, we investigated the deep level states of Fe- and Co-ions implanted Si wafer during rapid thermal annealing (RTA) process. The p-type Si (100) wafers with hole concentration of $1{\times}10^{16}cm^{-3}$ were uniformly implanted by Fe and Co ions at a dose of $1{\times}10^{16}cm^{-2}$ with an energy of 60 keV. After RTA process at temperature ranges of $500{\sim}900^{\circ}C$ for 5 min in nitrogen ambient, the Au electrodes with thickness of 100 nm were deposited to fabricate a Schottky contact by thermal evaporator. The surface morphology, the crystal structure, and the defect state for Fe- and Co- ion implanted p-type Si wafers were investigated by an atomic force microscopy, a x-ray diffraction, and a deep level transient spectroscopy, respectively. Finally, we will discuss the physical relationship between the electrical properties and the variation of defect states for Fe- and Co-ions implanted Si wafer after RTA.

• Journal of Elementary Mathematics Education in Korea
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• v.20 no.2
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• pp.239-257
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• 2016

The Common Core States Standards was developed by building on the best state standards in the U.S.; examining the expectations of other highperforming countries around world; and carefully studying the research and literature available on what students need to know. The Common Core States Standards for Mathematics are reshaping the teaching and learning of mathematics in California classroom using the California Common Core States Standards for Mathematics(CA CCSSM). The aim of this study is to observe CA CCSSM. The CA CCSSM were established to address the problem of having a curriculum that is 'a mile wide and an inch deep'. And it have two types of standards. One is standards for mathematical practice which are the same at each grade level, the other is standards for mathematical content which are different at each grade level. This study focused on standards for mathematical content, in particular, on Geometry domain in elementary level, using Mathematics Framework for California Public Schools.