• 한국광학회:학술대회논문집
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• 한국광학회 1998년도 제15회 광학 및 양자전자 학술발표회 논문집
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• pp.192-193
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• 1998

At Rutherford Appleton Laboratory(RAL), a high-repetition rate ps exicmer laser-plasma x-ray source has been developed for x-ray lithography with a calibrated output of up to 1 watt X-ray average power at 1nm wavelength. In a previous reports this compact x-ray source was used to print 0.18$\mu$m lines for a gate on Si-FET devices and deep three-dimensional structure with 100$\mu$m length, 25$\mu$m width, and 48 $\mu$m depth for a nanotechnology. The deep X-ray lithography is called as LIGA thchnology and getting a wide interest as a new technology for a nano-device. In this report all this works are summarized.

• 한국정밀공학회지
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• 제31권3호
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• pp.269-275
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• 2014

Conventional machining technologies such as a milling process have limitations in accuracy to fabricate microstructures. Deep X-ray lithography using the synchrotron radiation is a promising micromachining process with an excellent accuracy, whereas there are difficulties in the fabrication of multi-layered structures. Therefore, it is mainly used for fabricating simple mono-layered microstructures with a high aspect ratio. In this study, a novel technology for fabricating multi-layered microstructures is proposed by combining two processes. In advance, an X-ray resist material is cut and machined into various shapes and heights by the micro milling process. Subsequent X-ray irradiation process facilitates the fabrication of multi-layered microstructures. The proposed technology can overcome the limitation of the pattern accuracy in conventional milling process and the difficulty of the multi-layered machining in x-ray process. The usefulness of the proposed technology is demonstrated in this study by applying the technique in the realization of various multi-layered microstructures.

• 대한기계학회논문집A
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• 제30권10호
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• pp.1314-1319
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• 2006

This paper describes the novel fabrication method of the high-aspect-ratio nano structure which is impossible by conventional method using a shadow mask and a Deep X-ray Lithography (DXRL). The shadow mask with $1{\mu}m-sized$ apertures is fabricated on the silicon membrane using a conventional UV-lithography. The size of aperture is reduced to 200nm by accumulated low stress silicon nitride using a LPCVD (low pressure chemical vapor deposition) process. The X-ray mask is fabricated by depositing absorber layer (Au, $3{\mu}m$) on the back side of nano shadow mask. The thickness of an absorber layer must deposit dozens micrometers to obtain contrast more than 100 for a conventional DXRL process. The thickness of $3{\mu}m-absorber$ layer can get sufficient contrast using a central beam stop method, blocking high energy X-rays. The nano circle and nano line, 200nm in diameter in width, respectively, were demonstrated 700nm in height with a negative photoresist of SU-8.

• 대한기계학회논문집A
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• 제27권9호
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• pp.1517-1523
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• 2003

Deep X-ray lithography (DXRL), a fabrication method for the production of microstructures with a high aspect ratio, plays an important role in the subsequent electroplanting process. However, secondary radiation is generated during X-ray exposure and damages the resist adhesion to the metal layer. To solve adhesion problems, we modified the conventional DXRL process, changing the sequence of polymer adhesion in DXRL process. With optimized X-ray exposure and development conditions based on a calculated and modified X-ray power spectrum, we fabricated various polymer microstructures and achieved a maximum aspect ratio of 40.

• 한국산학기술학회논문지
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• 제5권2호
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• pp.186-190
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• 2004

Nano size 몰드의 제작은 X-ray lithography 방법을 이용하여 몰드를 제작하고, micro size의 경우 Deep UV lithography 방법을 이용하여 몰드를 제작하고 있다. 본 연구에서는 SLS(Selective Laser Sintering)형 RP(Rapid Prototyping System)을 이용하여 미세구조 몰드를 제작하였으며, 패턴의 깊이는 400 ㎛까지 구현하였다. 제작된 몰드의 강도와 내열성을 높이기 위하여 전해도금을 이용하여 몰드의 표면에 Ni를 300 ㎛생성 시켰다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권4호
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• pp.259-267
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• 2002

We present a novel 3D fabrication method with single X-ray process utilizing an X-ray mask in which a micro-actuator is integrated. An X-ray absorber is electroplated on the shuttle mass driven by the integrated micro-actuator during deep X-ray exposures. 3D microstructures are revealed by development kinetics and modulated in-depth dose distribution in resist, usually PMMA. Fabrication of X-ray masks with integrated electrothermal xy-stage and electrostatic actuator is presented along with discussions on PMMA development characteristics. Both devices use $20-\mu\textrm{m}$-thick overhanging single crystal Si as a structural material and fabricated using deep reactive ion etching of silicon-on-insulator wafer, phosphorous diffusion, gold electroplating, and bulk micromachining process. In electrostatic devices, $10-\mu\textrm{m}-thick$ gold absorber on $1mm{\times}1mm$ Si shuttle mass is supported by $10-\mu\textrm{m}-wide$, 1-mm-long suspension beams and oscillated by comb electrodes during X-ray exposures. In electrothermal devices, gold absorber on 1.42 mm diameter shuttle mass is oscillated in x and y directions sequentially by thermal expansion caused by joule heating of the corresponding bent beam actuators. The fundamental frequency and amplitude of the electrostatic devices are around 3.6 kHz and $20\mu\textrm{m}$, respectively, for a dc bias of 100 V and an ac bias of 20 VP-P (peak-peak). Displacements in x and y directions of the electrothermal devices are both around $20{\;}\mu\textrm{m}$at 742 mW input power. S-shaped and conical shaped PMMA microstructures are demonstrated through X-ray experiments with the fabricated devices.

• 소성∙가공
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• 제13권3호
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• pp.290-295
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• 2004

Mircolens and microlens V-groove are realized using a novel fabrication technology based on the exposure of a resist, usually PMMA, to deep X-rays and subsequent thermal treatment and inclined deep X-ray lithography, respectively. The fabrication technology is very simple and produces microlenses and microlens V-groove with good surface roughness of several nm. The molecular weight and glass transition temperature of PMMA is reduced when it is irradiated with deep X-rays. The microlenses were produced through the effects of volume change, surface tension, and reflow during thermal treatment of irradiated PMMA. Microlenses were produced with diameters ranging from 30 to $1500\mu\textrm{m}$. The surface X-ray mask is also fabricated to realize microlens arrays on PMMA sheet with a large area. The size of the micro V-groove is fabricated in the range of 12~$60\mu\textrm{m}$.

• 대한기계학회논문집A
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• 제27권6호
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• pp.997-1006
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• 2003

LICA technique evolved as a basic fabrication process fur micro-structure. The present report deals with the basic technological features in the sequence of the LIGA technique such as deep x-ray lithography(DXRL), electroplating, and moulding processes at Pohang Light Source (PLS). We designed 3-D structured master for fabrication of polymeric optical wavegude and manufactured polymeric optical wavegude with the same using hot embossing process. Polymeric optical waveguide could be produced with ${\pm}$ 1 $\mu\textrm{m}$ accuracy and good surface roughness.

• 대한기계학회논문집A
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• 제26권10호
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• pp.2187-2193
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• 2002

We present a novel method for 3D microfabrication with LIGA process that utilizes a deep X-ray mask in which a micro-actuator is integrated. The integrated micro-actuator oscillates the X-ray absorber, which is formed on the shuttle mass of the micro-actuator, during X-ray exposures to modify the absorbed dose profile in X-ray resist, typically PMMA. 3D PMMA microstructures according to the modulated dose contour are revealed after GG development. An X-ray mask with integrated comb drive actuator is fabricated using deep reactive ion etching, absorber electroplating, and bulk micromachining with silicon-on-insulator (SOI) wafer. 1mm $\times$ 1 mm, 20 $\mu$m thick silicon shuttle mass as a mask blank is supported by four 1 mm long suspension beams and is driven by the comb electrodes. A 10 $\mu$m thick, 50 $\mu$m line and spaced gold absorber pattern is electroplated on the shuttle mass before the release step. The fundamental frequency and amplitude are around 3.6 kHz and 20 $\mu$m, respectively, for a do bias of 100 V and an ac bias of 20 $V_{p-p}$ (peak-peak). Fabricated PMMA microstructure shows 15.4 $\mu$m deep, S-shaped cross section in the case of 1.6 kJ $cm^{-3}$ surface dose and GG development at 35$^{\circ}C$ for 40 minutes.

• 전자통신동향분석
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• 제13권5호통권53호
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• pp.38-52
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• 1998

Phase-shifting masks (PSM), optical proximity correction (OPC), off-axis illumination (OAI), annular illumination (AI)의 리소그래피 분해능 향상 기법과 deep ultraviolet photoresist의 개발 및 리소그래피의 최근 기술 동향을 요약 소개한다. DUV 리소그래피의 대안으로 관심을 끌고 있는 scattering with angular limitation projection electron-beam lithography (SCALPEL), extreme ultraviolet lithography (EUVL), X-ray lithography (XRL), ion projection lithography (IPL) 등의 새로운 리소그래피 기술들의 기본 원리와 최근 기술 동향도 소개하였다. 리소그래피는 반도체 공정에 있어서 가장 중요한 부분을 차지하기 때문에 리소그래피의 최근 기술 동향을 검토해 봄으로써 국내 리소그래피 장비 산업의 기술 개발을 위한 방향 설정에 도움이 될 것으로 생각한다.