• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.123-126
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• 2022

We investigated deep levels in n-type 4H-SiC epitaxy layer of the Positive-Intrinsic-Negative diode and Schottky barrier diodes by using deep level transient spectroscopy. Despite the excellent performance of 4H-SiC, research on various deep level defects still requires a lot of research to improve device performance. In Positive-Intrinsic-Negative diode, two defects of 196K and 628K are observed more than Schottky barrier diode. This is related to the action of impurity atoms infiltrating or occupying the 4H-SiC lattice in the ion implantation process. The I-V characteristics of the Positive-Intrinsic-Negative diode shows about ~100 times lower the leakage current level than Schottky barrier diode due to the grid structures in Positive-Intrinsic-Negative. As a result of comparing the capacitance of devices diode and Schottky barrier diode devices, it can be seen that the capacitance value lowered if it exists the P implantation regions from C-V characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1879-1883
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• 2018

We analyzed the deep-trap states of GaN/InGaN ultraviolet light-emitting diodes (UV LEDs) before and after electrical stress. After electrical stress, the light output power dropped by 5.5%, and the forward leakage current was increased. The optical degradation mechanism could be explained based on the space-charge-limited conduction (SCLC) theory. Specifically, for the reference UV LED (before stress), two sets of deep-level states which were located 0.26 and 0.52 eV below the conduction band edge were present, one with a density of $2.41{\times}10^{16}$ and the other with a density of $3.91{\times}10^{16}cm^{-3}$. However, after maximum electrical stress, three sets of deep-level states, with respective densities of $1.82{\times}10^{16}$, $2.32{\times}10^{16}cm^{-3}$, $5.31{\times}10^{16}cm^{-3}$ were found to locate at 0.21, 0.24, and 0.50 eV below the conduction band. This finding shows that the SCLC theory is useful for understanding the degradation mechanism associated with defect generation in UV LEDs.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.800-806
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• 1997

The behavior of de levels in rapid thermal annealed Fe-doped semi-insulating InP(100) was studied by photoinduced current transient spectrocopy(PICTS). In bulk InP, T2(Ec-0.24 eV), T3(Ec-0.30 eV) and T5(Ec-0.62 eV) traps were observed. After annealing the T2 trap was annihilated at 20$0^{\circ}C$ and recreated at 35$0^{\circ}C$. T3 trap was not affected below 40$0^{\circ}C$. With increasing temperature the concentration of T5 trap reduced and it was annihilated at 30$0^{\circ}C$. However the T1(Ec-0.16 eV) and T4(Ec-0.42 eV) traps were began to appear at 40$0^{\circ}C$and these concentrations were increased with annealing temperature. The T1 and T4 traps seem to be related to the isolated phosphorus vacancy( $V_{p}$) and $V_{p}$-indium antisite( $V_{p}$- $P_{in}$ ) or $V_{p}$-indium interstitial( $V_{p}$-I $n_{I}$) respectiely.respectiely.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.223-226
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• 1998

In this paper, we have investigated how morphology and electrical properties in Polyphenylene sulfide(PPS) are changed by uniaxial elongation. XRD pattern shows that interplanar distance and crystallinities are decreased by increasing elongation ratio. Electrical conduction mechanism of PPS is explained as schottky emission from analysis of electrical current. The electrical current is decreased by increasing elongation ratio. The conductivity is changed remarkably above the glass transition temperature around $(82^{\circ}C)$. The band gap of PPS is evaluated as 3.9-4(eV) from the results of photoconductivity. Increarnent of elongation ratio gives us some information about deep trap formation from photocurrent.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1294-1303
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• 1988

Electron and hole traps in semi-insulating GaAs with activation energies ({\Delta}E_r) ranging from 0.16 $\pm$ 0.01 to 0.98 $\pm$ 0.01 eV, have been detected and characterized by photo-induced current transient measurements. SI undoped GaAs has fewer deep levels than SI GaAs: Cr. The thermal capture cross section and density of the traps have been estimated and some of the centers have been related to native defects. In particular, the activation energy of the compensating Cr, and "0" levels in semi-insulating GaAs were accurately measured. The transient measurements were complemented by Hall measurements at T > 300K and photocurrent spectra measurements. The transition energies for the deep compensating levels obtained by the analyses of data from these measurements, when compared with those from the transient measurements, indicate negligible lattice-coupling of these centers. Analysis of the transport data also indicates that neutral impurity scattering plays a significant role in semi-insulating materials at high temperatures.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.26 no.2
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• pp.145-166
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• 2021

For several decades, sediment traps have served as one of the key tools for constraining the biological carbon pump (BCP), a process that vertically exports particulate organic carbon (POC) and associated biogenic materials from marine primary production in surface waters to the deep ocean interior. In this paper, I introduced the general methods, the current status of global sediment trap studies, and importance of it to understand the deep ocean carbon cycling. Recent studies suggest that sinking POC in the deep ocean are more complex and spatio-temporally heterogeneous than we considered. Especially researches those studied resuspended and laterally transported particles are presented. Researches that used organic (radiocarbon; ¹⁴C) and inorganic (Al) tracers to understand the oceanic POC cycling and the significance of resuspended particles are reviewed, and the importance of radiocarbon study by using MICADAS (Mini radioCarbon Dating Systems) is emphasized.

• Korean Journal of Materials Research
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• v.34 no.2
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• pp.111-115
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• 2024

Silicon carbide (SiC) has emerged as a promising material for next-generation power semiconductor materials, due to its high thermal conductivity and high critical electric field (~3 MV/cm) with a wide bandgap of 3.3 eV. This permits SiC devices to operate at lower on-resistance and higher breakdown voltage. However, to improve device performance, advanced research is still needed to reduce point defects in the SiC epitaxial layer. This work investigated the electrical characteristics and defect properties using DLTS analysis. Four deep level defects generated by the implantation process and during epitaxial layer growth were detected. Trap parameters such as energy level, capture-cross section, trap density were obtained from an Arrhenius plot. To investigate the impact of defects on the device, a 2D TCAD simulation was conducted using the same device structure, and the extracted defect parameters were added to confirm electrical characteristics. The degradation of device performance such as an increase in on-resistance by adding trap parameters was confirmed.

• Journal of Radiation Protection and Research
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• v.34 no.4
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• pp.155-164
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• 2009

In this paper, we used computerized glow curve deconvolution (CGCD) software with several models for the simulation of a TL glow curve which was used for analysis. By using the general approximation plus model, parameters values of the glow curve were analyzed and compared with the other models parameters (general approximation, mixed order kinetics, general order kinetics). The LiF:Mg,Cu,Si and the LiF:Mg,Cu,P material were used for the glow curve analysis. And we based on figure of merits (FOM) which was the goodness of the fitting that was monitored through the value between analysis model and TLD materials. The ideal value of FOM is 0 which represents a perfect fit. The main glow peak makes the most effect of radiation dose assessment of TLD materials. The main peak of the LiF:Mg,Cu,Si materials has a intensity rate 80.76% of the whole TL glow intensity, and that of LiF:Mg,Cu,P materials has a intensity rate 68.07% of the whole TL glow intensity. The activation energy of LiF:Mg,Cu,Si was analyzed as 2.39 eV by result of the general approximation plus(GAP) model. In the case of mixed order kinetics (MOK), the activation energy was analyzed as 2.29 eV. The activation energy was analyzed as 2.38 eV by the general order kinetics (GOK) model. In the case of LiF:Mg,Cu,P TLD, the activation energy was analyzed as 2.39 eV by result of the GAP model. In the case of MOK, the activation energy was analyzed as 2.55 eV. The activation energy was analyzed as 2.51 eV by the GOK model. The R value means different ratio of retrapping-recombination. The R value of LiF:Mg,Cu,Si TLD main peak analyzed as $1.12\times10^{-6}$ and $\alpha$ value analyzed as $1.0\times10^{-3}$. The R of LiF:Mg,Cu,P TLD analyzed as $7.91\times10^{-4}$, the $\alpha$ value means different ratio of initial thermally trapped electron density-initial trapped electron density (include thermally disconnected trap electrons density). The $\alpha$ value was analyzed as $9.17\times10^{-1}$ which was the difference from LiF:Mg,Cu,Si TLD. The deep trap electron density of LiF:Mg,Cu,Si was higher than the deep trap electron density of LiF:Mg,Cu,P.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.22 no.4
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• pp.61-70
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• 1986

In accordance with a rapid growth of demani on aquatic animals, researches of the unused fishery resources On the deep sea b~d in the Korean Waters has been and will be required. The authors carried out a series of fishing experiments to investigate the available resources and to find the effective fishing method on the deep sea bed of the Korean East Sea. In the experiments, 19 kinds of traps which are different from each other in shape, mesh size and entrance diameter were used. The fishing experiments w~r;; carried out in four areas of 20Dm, 600.'11, 800m and 1000.'11 deep respectively, by the Pusan 402 (30:) GT) and the Pusan 403 (279GT), the training ships of National Fisheries University of Pusan, during August, 1986. The catc~ were analyzed with the size, the depth and the construction of traps. The results obtained can be summarized as follows: 1. Main species of the catch w~re pink shrimp, Pandalus bolelis, a kind of welks, Buccimum striatissimum and a kind of larg~ crabs. Chiono8cetes japonicus and the another species were few. 2. The CPUE value (expressed by the number of catch per trap in this paper) of pink shrimp was the highest in the depth of 20J-n around, and the value in the depth of 600.'11 or more decreased gradually with an increase of the depth. But, the value of Buccimum straitissimum was much higher in the depth of 6:J:)!1I or more than that in the depth of 200m around. On the other hand, the value of Chion:Jecetes japonjcus was very low in general. 3. The iniividual body size of the catch differed with the depth. Pink shrimps caught in the depth of 200m around were smaller than those in the depth of 600.'11 or more. In contrast with this, Baccimum striatissim:t.m caught in the depth of 200m around were larger than those in the depth of 600.'11 or more. 4. Depending on the selection curve in Ishida's method for the mesh size of trap webbing, the carapace length of pink shrimp and the shell length of Buccimum striatissimum which are equivalent to 100% relative catching efficiency can be estimated about 3.5cm and 6.5cm or so respectively. 5. The number of catch of pink shrimp and Buccimum striatissimum by the 60.'1'1.'11 entrance diameter of trap were less than that by the 90mm, 120mm and 150mm, even thogh the diffierence am~r, g 9:Jmm, 120.'11.'11 and 150:1'.'11 are not so large.