• IEMEK Journal of Embedded Systems and Applications
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• v.13 no.3
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• pp.151-160
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• 2018

NAND flash memories have the advantages of fast access speed, high density and low power consumption, thus they have increasing demand in embedded system and mobile environment. Despite the low power and fast speed gains of NAND flash memory, DRAM disk buffers were used because of the performance load and limited durability of NAND flash cell. However, DRAM disk buffers are not suitable for limited energy environments due to their high static energy consumption. In this paper, we propose WAP-LRU (Write pattern Analysis based Placement by LRU) hybrid disk buffer management policy. Our policy designates the buffer location in the hybrid memory by analyzing write pattern of the workloads to check the continuity of the page operations. In our simulation, WAP-LRU increased the lifetime of NAND flash memory by reducing the number of garbage collections by 63.1% on average. In addition, energy consumption is reduced by an average of 53.4% compared to DRAM disk buffers.

• Journal of KIISE
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• v.43 no.2
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• pp.177-185
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• 2016

In this paper, we propose a hybrid write buffer architecture comprised of DRAM and NVRAM on SSD and a write buffer algorithm for the hybrid write buffer architecture. Unlike other write buffer algorithms, the proposed algorithm considers read pages as well as write pages to improve the performance of storage devices because most actual workloads are read-write mixed workloads. Through effectively managing NVRAM pages, the proposed algorithm extends the endurance of SSD by reducing the number of erase operations on NAND flash memory. Our experimental results show that our algorithm improved the buffer hit ratio by up to 116.51% and reduced the number of erase operations of NAND flash memory by up to 56.66%.

• Proceedings of the Korea Information Processing Society Conference
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• 2013.05a
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• pp.93-96
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• 2013

모바일 환경에서 전력 손실이 중요한 문제 중 하나가 됨에 따라, MRAM과 플래시메모리와 같은 비 휘발성 메모리가 차세대 모바일 컴퓨터에 널리 사용될 것이다. 본 논문에서는 DRAM/MRAM 하이브리드 메인 메모리의 제한적인 쓰기 연산 성능을 고려한 효율적인 버퍼 캐시 기법을 연구했다. 제안한 기법은 MRAM 의 제한적인 쓰기 연산 성능을 고려하고 플래시 메모리 저장 장치의 삭제 연산 횟수를 최소화한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.346-346
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• 2010

A capacitorless one transistor dynamic random access memory (1T-DRAM) on silicon-germanium-on-insulator substrate was investigated. SGOI technology can make high effective mobility because of lattice mismatch between the Si channel and the SiGe buffer layer. To evaluate memory characteristics of 1T-DRAM, the floating body effect is generated by impact ionization (II) and gate induced drain leakage (GIDL) current. Compared with use of impact ionization current, the use of GIDL current leads to low power consumption and larger sense margin.

• Journal of Digital Contents Society
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• v.14 no.2
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• pp.215-222
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• 2013

NAND flash memory-based Solid State Drives (SSD) have lots of merits compared to traditional hard disk drives (HDD). However, random write in SSD is still far slower than sequential read/write and random read. There are two independent approaches to resolve this problem: 1) using part of the flash memory blocks as log blocks, and 2) using internal write buffer (DRAM or Non-Volatile RAM) in SSD. While log blocks are managed by the Flash Translation Layer (FTL), write buffer management has been treated separately from FTL. Write buffer management schemes did not use the exact status of log blocks and log block management schemes in FTL did not consider the behavior of write buffer management scheme. In this paper, we first show that log blocks and write buffer have a tight relationship to each other, which necessitates integrated management of both of them. Since log blocks also can be viewed as another type of write buffer, we can manage both of them as an integrated write buffer. Then we provide three design criteria for the integrated write buffer management scheme which can be very useful to SSD firmware designers.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.3
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• pp.7-12
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• 2016

DRAM is commonly used as a smartphone memory medium, but extending its capacity is challenging due to DRAM's large battery consumption and density limit. Meanwhile, smartphone applications such as social network services need increasingly large memory, resulting in long latency due to additional storage accesses. To alleviate this situation, we adopt emerging nonvolatile memory (NVRAM) as smartphone's buffer cache and propose an efficient management scheme. The proposed scheme stores all dirty data in NVRAM, thereby reducing the number of storage accesses. Moreover, it separately exploits read and write histories of data accesses, leading to more efficient management of volatile and nonvolatile buffer caches, respectively. Trace-driven simulations show that the proposed scheme improves I/O performances significantly.

• Journal of the Korea Society of Computer and Information
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• v.24 no.7
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• pp.1-8
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• 2019

Recently, an SSD with hybrid buffer memories is actively researching to reduce the overall latency in server computing systems. However, existing hybrid buffer policies caused many swapping operations in pages because it did not consider the overall latency such as read/write operations of flash chips in the SSD. This paper proposes the clock with hybrid buffer memories (CLOCK-HBM) for a new hybrid buffer policy in the SSD with server computing systems. The CLOCK-HBM constructs new policies based on unique characteristics in both DRAM buffer and NVMs buffer for reducing the number of swapping operations in the SSD. In experimental results, the CLOCK-HBM reduced the number of swapping operations in the SSD by 43.5% on average, compared with LRU, CLOCK, and CLOCK-DNV.

• Journal of the Korea Society for Simulation
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• v.9 no.4
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• pp.51-58
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• 2000

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. The novel junction process scheme in sub-micron DRAM cell with STI(Shallow Trench Isolation) has been investigated to improve the tail component in the retention time distribution which is of great importance in DRAM characteristics. In this' paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced ${\Delta}Rp$ (projected standard deviation) increase using buffered N-implantation with tilt and 4X(4 times)-rotation that is designed on the basis of the local-field-enhancement model of the tail component. We report an excellent tail improvement of the retention time distribution attributed to the reduction of electric field across the cell junction due to the redistribution of N-concentration which is Intentionally caused by ion Beam Shadowing and Buffering Effect using tilt implantation with 4X-rotation. And also, we suggest the least requirements for adoption of this new implantation scheme and the method to optimize the key parameters such as tilt angle, rotation number, Rp compensation and Nd/Na ratio. We used MEDICI Simulator to confirm the junction device characteristics. And measured the refresh time using the ADVAN Probe tester.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.325-328
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• 2000

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. In this paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced $\Delta$ Rp increase using buffered N- implantation with tilt and 4X-rotation that is designed on the basis of the local-field-enhancement model of the tail component. We report an excellent tail improvement of the retention time distribution attributed to the reduction of electric field across the cell junction due to the redistribution of N- concentration which is intentionally caused by Ion Beam Shadowing and Buffering Effect using tilt implantation with 4X-rotation.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.8
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• pp.143-150
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• 2013

Solid-state disks (SSDs) have been widely used by high-performance personal computers or servers due to its good characteristics and performance. The NAND flash-based SSDs, which take large portion of the whole NAND flash market, are the major type of SSDs. They usually integrate a cache buffer which is built from DRAM and uses the write-back policy for better performance. Unfortunately, the policy makes existing scheduling methods less effective at the I/F level of SSDs Therefore, in this paper, we propose a scheduling method for the I/F with consideration of the cache buffer. The proposed method considers the hit/miss status of cache buffer and gives higher priority to the read requests. As a result, the requests whose data is hit on the cache buffer can be handled in advance and the read requests which have larger effects on the whole system performance than write requests experience shorter latency. The experimental results show that the proposed scheduling method improves read latency by 26%.