• Psychiatry investigation
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• v.15 no.12
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• pp.1188-1202
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• 2018

Objective This study protocol aims to determine, using a rigorous approach in patients with bipolar disorder (BD) and non-seasonal major depressive episode (MDE), the characteristics of bright light therapy (BLT) administration (duration, escalation, morning and mid-day exposures) depending on the tolerance (hypomanic symptoms). Methods Patients with BD I or II and treated by a mood stabilizer are eligible. After 1 week of placebo, patients are randomized between either morning or mid-day exposure for 10 weeks of active BLT with glasses using a dose escalation at 7.5, 10, 15, 30 and 45 minutes/day. A further follow-up visit is planned 6 months after inclusion. Patients will be included by cohorts of 3, with at least 3 days of delay between them, and 1 week between cohorts. If none meet a dose limiting toxicity (DLT; i.e hypomanic symptoms), the initiation dose of the next cohort will be increased. If one patient meet a DLT, an additionnal cohort will start at the same dose. If 2 or 3 patients meet a DLT, from the same cohort or from two cohorts at the same dose initiation, the maximum tolerated dose is defined. This dose escalation will also take into account DLTs observed during the intra-subject escalation on previous cohorts, with a "Target Ceiling Dose" defined if 2 DLTs occured at a dose. Discussion Using an innovative and more ergonomic device in the form of glasses, this study aims to better codify the use of BLT in BD to ensure a good initiation and tolerance.

• Journal of Gastric Cancer
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• v.21 no.4
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• pp.418-425
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• 2021

Purpose: We designed a new regimen by combining intraperitoneal (IP) paclitaxel (PTX) with systemic S-1 plus oxaliplatin (SOX) for the treatment of advanced gastric cancer with peritoneal metastasis. This dose-escalation study aimed to determine the maximum tolerated dose (MTD) and recommended dose (RD) of IP PTX administered weekly to patients. Materials and Methods: Eight cycles of IP PTX plus SOX regimen were administered to the patients. S-1 was administered orally twice daily at a dose of 80 mg/m²/day for 14 consecutive days, followed by 7 days of rest. Intravenous oxaliplatin was administered at a fixed dose of 100 mg/m² on day 1, while IP PTX was administered on days 1 and 8. The initial dose of IP PTX was 40 mg/m², and the dose escalation was set in units of 20 mg/m² up to 80 mg/m². Dose-limiting toxicities (DLTs) were defined as grade 3 non-hematologic toxicities, grade 4 leukopenia, grade 3 febrile neutropenia, and grade 3 thrombocytopenia. Results: Nine patients were included in the study. No DLTs were observed in any of the enrolled patients. Therefore, the MTD was not reached, and the RD of IP PTX was determined to be 80 mg/m². Four patients (44%) showed a decreased peritoneal cancer index score on second-look laparoscopic examination. Conclusions: The present study determined the dose for further clinical trials of IP PTX to be 80 mg/m², when combined with a systemic SOX regimen.

• Journal of IKEEE
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• v.28 no.1
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• pp.104-109
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• 2024

In this research, we explored the influence of post-annealing atmospheres on the electrical properties of Ga₂O₃/SiC heterojunction diodes. We fabricated Ga₂O₃/SiC heterojunction diodes by RF sputtering and after the fabrication the post-annealing in various gas atmospheres was performed. We measured the changes in deep-level defects using Deep Level Transient Spectroscopy (DLTS) and we conducted an electrical characteristic of J-V measurement and Hall measurement to analyzed the effects of annealing atmosphere on Ga₂O₃/SiC heterojunction diode. In the N₂ annealed devices, the highest on-state current was measured as 3.06 × 10^-2 A/cm^2, and an increase in carrier concentration of 3.8 × 10¹⁴ cm^-3 was observed. This confirms that the variations in deep level defects due to the post-annealing atmosphere can influence the electrical properties.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.118-118
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• 2003

전력반도체 소자로 사용되는 p$^{-}$-n$^{-}$ 접합 다이오드의 스위칭 속도를 향상시키고 그에 따른 에너지 손실을 감소시키기 위해 전자 조사를 실시하였다. Reverse recovery time이 현저히 감소한 반면, 전자 조사에 의한 누설전류와 on-state 전압 강하와 같은 그 외의 전기적 특성 저하는 무시할 수 있는 정도였다. 그밖에 시료의 deep level transient spectroscpy(DLTS) 분석 결과와 secondary ion mass spectrometry(SIMS) depth profile을 근거로 결함 분포와 전자조사 유도결함의 유형을 논하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.32-33
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• 1995

고집적 회로 제작에 사용되는 P-형 실리콘 웨이퍼 내부에 존재하는 금속불순물을 소수캐리어의 여기변화 등을 이용하는 정성적인 SPV 측정과 정량적인 DLTS 측정을 통해서 비교, 분석하였다. 반도체공정상 중요한 오염원이며, 분석이 쉬운 Fe을 주 오염원으로 하여 분석한 결과 SPV와 DLTS에 의한 Fe는 상호연관관계가 성립하며, p-형 실리콘 웨이퍼내의 Fe, FeB 거동을 20$0^{\circ}C$ quenching으로 관찰할 수 있었으며, 각각의 에너지준위는 0.45 및 0.11eV 임을 확인하였다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.56-62
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• 1992

This paper is analyzed the charge trapping and electrical properties of 0(Oxide), NO(Nitrided oxide) and ONO(Reoxidized nitrided oxide) as dielectric films in MIS structures. We have processed bottom oxide and top oxide by the thermal method, and nitride(Si$_{3}N_{4}$) by the LPCVD(Low Pressure Chemical Vapor Deposition) method on P-type(100) Silicon wafer. We have studied the charge trapping properties of the dielectrics by using a computer controlled DLTS system. All of the dielectric films are shown peak nearly at 300K. Those are bulk traps. Many trap densities which is detected in NO films, but traps. Many trap densities which is detected in NO films. Varing the nitride thickness, the trap densities of thinner nitride is decreased than the thicker nitride. Finally we have found that trap densities of ONO films is affected by nitride thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.81-81
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• 1999

고에너지 이온 주입에 의해 형성되는 결함의 거동을 DLTS(deep level transient spectroscopy)를 통해 조사하였다. 이온 주입에 이용된 기판들은 서로 다른 산소 농도를 가지고 있었으며, B 이온의 주입 농도는 각각 5X10E13 ~ 4X10E14으로 주입 에너지는 1.5MeV였다. 이온 주입에 의해 형성된 buried layer 내의 boron의 농도는 SIMS(secondary ion mass spectroscopy)를 이용하여 측정하였으며, 열처리에 따른 이차 결함의 생성은 TEM(transmission electron microscopy) 및 BMD(bulk micro defect)를 조사함으로써 알 수 있었다. 이온 주입에 의해 형성된 일차 결함의 제거 및 silicon 내부에서의 금속 gettering을 위하여 furnace 및 RTA (rapid thermal annealing)를 이용한 열처리를 행하였다. 이온주입 초기 상태 및 산소의 농도 또는 이온주입의 농도에 따른 결함을 살펴보기 위하여 DLTS를 이용하였으며, 또한 열처리에 따른 이러한 초기 결함들의 거동을 조사하여 TEM 및 BMD 결과와 비교, 분석하였다.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.213-219
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• 1994

Cu compensated Si doped GaAs (GaAs :Si:Cu has been chosen as the switch material. The GaAs material has been characterized by DLTS(Deep Level Transient Spectroscopy) technique and the obtained data were used in the computer simulation. Simulation studies are performed on several GaAs switch systems, composed of different densities of Cu, to investigate the influence of deep traps in the switch systems. The computed results demonstrates important aspect of the switch, the existence of two stable states and fast optical quenching. An important parameter optimum Cu density for the switch are also determined.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.460-466
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• 1999

The deep level electron traps in AP-MOCVD GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures have been investigated by means of Deep Level Transient Spectroscopy DLTS). In terms of the experimental procedure, GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures were deposited on 2" undoped semi-insulating GaAs wafers by the AP-MOCVD method at $650^{\circ}C$ with TMGa, AsH3, TMAl, and SiH4 gases. The n-type GaAs conduction layers were doped with Si to the target concentration of about 2$\times$10\ulcornercm\ulcorner. The Al content was targeted to x=0.5 and the thicknesses of Al\ulcornerGa\ulcornerAs layers were targeted from 0 to 40 nm. In order to investigate the electrical characteristics, an array of Schottky diodes was built on the heterostructures by the lift-off process and Al thermal evaporation. Among the key results of this experiment, the deep level electron traps at 0.742~0.777 eV and 0.359~0.680 eV were observed in the heterostructures; however, only a 0.787 eV level was detected in n-type GaAs samples without the Al\ulcornerGa\ulcornerAs overlayer. It may be concluded that the 0.787 eV level is an EL2 level and that the 0.742~0.777 eV levels are related to EL2 and residual oxygen impurities which are usually found in MOCVD GaAs and Al\ulcornerGa\ulcornerAs materials grown at $630~660^{\circ}C$. The 0.359~0.680 eV levels may be due to the defects related with the al-O complex and residual Si impurities which are also usually known to exist in the MOCVD materials. Particularly, as the Si doping concentration in the n-type GaAs layer increased, the electron trap concentrations in the heterostructure materials and the magnitude of the C-V hysteresis in the Schottky diodes also increased, indicating that all are intimately related.ated.

• Proceedings of the KAIS Fall Conference
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• 2002.05a
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• pp.151-154
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• 2002

반도체 소자의 기판 재료로 사용되고 있는 실리콘 웨이퍼는 그 정밀도가 매우 중요하다. 본 연구에서는 균일한 Dopant 농도 분포를 얻을 수 있는 중성자 변환 Doping을 이용하여 실리콘에 인(P)을 Doping하는 연구를 수행하였다. 중성자 변환 Doping, 즉 NTD(Neutron Transmutation Doping)란 원자번호 30인 실리콘 동위원소에 중성자가 조사되면 원자번호 31인 실리콘으로 변환되고, 2.6시간의 반감기를 갖고 decay 되면서 인(P)으로 변하게 되어 실리콘 웨이퍼에 n-type 전도를 갖게 하는 것을 말한다. 본 연구에서는 하나로 원자로를 이용하여 고저항(1000-2000Ωcm) FZ 실리콘 웨이퍼 에 두 개의 조사공에서 중성자 조사하여 저항의 변화를 관찰하였고, 중성자 조사시 발생하는 점결함을 분석하여 점결함이 저항 변화에 미치는 영향을 알아보았다. 중성자 조사 전 이론적 계산에 의해 HTS조사공은 5Ωcm, 20.1Ωcm 이고 IP3조사공은 5Ωcm, 26.5Ωcm, 32.5Ωcm 이었고, 중성자 조사 후 SRP로 측정한 결과 실제 저항값은 HTS-1 2.10Ωcm, HTS-2 7.21Ωcm 이었고, IP-1은 1.79Ωcm, IP-2는 6.83Ωcm, 마지막으로 IP-3는 9.23Ωcm 이었다. DLTS 측정 결과 IP조사공에서 새로운 피의 결을 발견할 수 있었다.