• Title/Summary/Keyword: DL emission

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Improvement of UV Photoluminescence of Hydrogen Plasma Treated ZnO Nanowires (수소 플라즈마 처리된 산화 아연 나노선의 자외선 발광 특성향상)

  • Kang, Wooseung;Park, Sunghoon
    • Journal of the Korean Vacuum Society
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    • v.22 no.6
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    • pp.291-297
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    • 2013
  • ZnO nanowires were synthesized by vapor-liquid-solid (VLS) process using ZnO and graphite powders on the sapphire substrate coated with an Au film as a catalyst. ZnO nanowires had two prominent emission bands; i) near-band edge (NBE) emission band at 380 nm, and ii) a relatively stronger deep level (DL) emission band ($I_{NBE}/I_{DL}$ <1). In order for the ZnO nanowires to be utilized as an effective material for UV emitting devices, the photoluminescence intensity of NBE needs to be improved with the decreased intensity of DL. In the current study, hydrogen plasma treatment was performed to improve the photoluminescence characteristics of ZnO nanowires. With the hydrogen plasma treatment time of more than 120 sec, the extent of performance improvement was gradually decreased. However, the intensity ratio of NBE to DL ($I_{NBE}/I_{DL}$) was significantly improved to about 4 with a relatively short plasma treatment time of 90 sec, suggesting hydrogen plasma treatment is a promising approach to improve the photoluminescence properties of ZnO nanowires.

Synthesis of Organic EL Materials with Cyano Group and Evaluation of Emission Characteristics in Organic EL Devices (시안기를 가진 유기 EL 물질들의 합성 및 유기 EL 소자에서의 발광특성평가)

  • Kim, Dong Uk
    • Journal of the Korean Chemical Society
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    • v.43 no.3
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    • pp.315-320
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    • 1999
  • Novel electroluminescent materials, polymer material, PU-BCN and low molar mass material, D-BCN with the same chromophores were designed and synthesized. A molecular structure of chromophore was composed of bisstyrylbenzene derivative with cyano groups as electron injection and transport and phenylamine groups as hole injection and transport. Device structures with PU-BCN and D-BCN as an emission layer were fa-bricated, which were a single-layer device(SL), Indium-tin oxide(ITO)/emission layer/MgAg, and two kinds of double-layer devices which were composed of ITO/emission layer/oxadiazole derivative/MgAg as a DL-E device and ITO/triphenylamine derivative/emission layer/MgAg as a DL-H device. The two emission materials, PU-BCN and D-BCN with the same emission-chromophore were evaluated as having excellent performance of charge injection and transport and revealed almost the same emission characteristics in high current density. EL emission maximum peaks of two material were detected at about 640 nm wavelength of red emission region.

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Concentration and Gas-particle Partition of PCDDs/Fs and dl-PCBs in the Ambient Air of Ansan Area (안산지역 대기 중 다이옥신 및 dl-PCBs의 오염특성 조사)

  • Heo, Jong-Won;Kim, Dong-Gi;Song, Il-Seok;Lee, Gang-Woong
    • Journal of Korean Society for Atmospheric Environment
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    • v.26 no.5
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    • pp.517-532
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    • 2010
  • After establishment of Banwol industrial complex in 1987, Ansan city becomes the largest industrial sector development in Gyeonggi-do, Korea. As the population and industrial activity grow over this region, toxic air pollutants, particularly POPs (Persistent Organic Pollutants) from various emission sources have been major public concerns. Air samples for POPs monitoring were collected at the industrial sites ($A_2$), residential sites ($B_1$, $B_2$), commercial site (C), and rural/remote site (D) of the area of Ansan during 2008 with a prolonged industrial sampling site $A_1$ from 2001 to 2008. All samples were analysed for 2,3,7,8 substituted-polychlorinated dibenzo-p-dioxin and dibenzofurans (PCDD/Fs) and dioxin like polychlorinatd diphenyls (dl-PCBs). In site $A_1$, a steady decline of their concentrations from 2003 to 2008 was observed due to the reinforced emission guideline from waste incinerators. The average concentration of the PCDD/Fs and dl-PCBs ranged between 0.118 pg-TEQ/$m^3$ (rural/remote site D) and 0.532 pg-TEQ/$m^3$ (industrial area $A_2$). These level were generally consistent with previous studies in Gyeonggi-do, while higher than other places. Most of PCDD/Fs congener were partitioned into particle phase, whereas dl-PCBs were partitioned into gas phase. The logarithm of gas-particle partition coefficient $K_P$ of dl-PCBs and PCDD/Fs were well correlated with sub-cooled liquid vapor pressure $P_L$. The slope $m_T$ of log $K_P$ versus log $P_L$ for PCDD/Fs (-1.22) and dl-PCBs (-1.02) in industrial area ($A_2$) were high compared to other residential/commercial area. It suggests that this area was likely influenced by the direct emission source of PCDD/Fs and dl-PCBs. To simulate the partition of PCDD/Fs and dl-PCBs between gas and particle phase, Junge-Pankow model ($P_L$-base) and $K_{oa}$ model were applied. It was found that J-P model was more suitable than the $K_{oa}$ model in this study.

Comparison of organic EL characteristics of low mass dye and polymer material with the same chromophore (동일한 발광기를 가진 저분자색소와 고분자물질의 유기 EL특성의 비교)

  • Kim, Dong-Uk
    • Journal of Sensor Science and Technology
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    • v.8 no.2
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    • pp.177-183
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    • 1999
  • A Polymer material, PU-BCN and a low molar mass material D-BCN with the same chromophore were evaluated by fabricating various electroluminescent(EL) devices. A molecular structure of the chromophore was composed as two cyano groups for electron-injection and transport and two triphenylamine groups for hole-injection and transport. Various kinds of EL devices with two different types of EL materials, PU-BCN and D-BCN were fabricated, which were an Indium-tin oxide(ITO)/PU-BCN or D-BCN/MgAg device as a single-layer device(SL) and an ITO/PU-BCN or D-BCN/oxadiazole ferivative/MgAg as a double-layer device(DL-E) and an ITO/triphenylamine derivative/D-BCN/MgAg as a double-layer device(DL-H) device. Two kinds of materials, PU-BCN and D-BCN showed the same emission characteristics in the high current density and excellent EL characteristics even in the SL devices. Maximum EL peaks revealed red emission of about 640 nm, which were corresponded with the fluorescence peaks of the films of two materials.

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Effects of Heat Inputs on Phase Transformation and Resistance to Intergranular Corrosion of F316 Austenitic Stainless Steel (F316 오스테나이트 스테인리스강의 상변태 및 입계부식저항성에 미치는 입열의 영향)

  • Jeong, Gyue-Seog;Lee, In-Sung;Kim, Soon-Tae
    • Corrosion Science and Technology
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    • v.19 no.3
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    • pp.146-155
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    • 2020
  • To elucidate the effect of heat inputs on phase transformation and resistance to intergranular corrosion of F316 austenitic stainless steel (ASS), thermodynamic calculations of each phase and time-temperature-transformation diagram were conducted using JMaPro simulation software, oxalic acid etch test, double-loop electrochemical potentiokinetic reactivation test (DL-EPR), field emission scanning electron microscopy with energy dispersive spectroscopy, and transmission electron microscopy analyses of Cr carbide (Cr23C6), austenite phase and ferrite phase. F316 ASS containing a relatively low C content of 0.043 wt% showed a slightly sensitized microstructure (acceptably dual structure) due to a small amount of Cr carbide precipitated at heat affected zone irrespective of heat inputs. Based on results of DL-EPR test, although heat input was increased, the ratio of Ir to Ia was only increased very slightly due to a slight sensitization. Therefore, heat inputs have little influences on resistance to intergranular corrosion of F316 austenitic stainless steel containing 0.043 wt% C.

Correlation Between Energy Gap and Defect Formation of Al Doped Zinc Oxide on Carbon Doped Silicon Oxide

  • Oh, Teresa;Kim, Chy Hyung
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.4
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    • pp.207-212
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    • 2014
  • Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.

Effects of Cooled EGR on Exhaust Emission Characteristics of DI DME Engine (대체에너지 DME를 사용하는 직접분사엔진의 배기특성에 미치는 Cooled EGR의 영향)

  • Pyo, Youngduk;Nam, Sanghoon;Kim, Gangchul;Kim, Youngkil;Lee, Yongjae
    • Transactions of the Korean hydrogen and new energy society
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    • v.14 no.2
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    • pp.138-145
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    • 2003
  • There are high expectations for DME(Dimethyl Ether) as a new alternative fuel for diesel engine. Compared with the conventional diesel engine, nearly zero soot emission and high thermal efficiency have been reported from DME fuelled CI engines. However, higher NOx emission is one of the disadvantages from DME Engines. In the present study, cooled EGR(Exhaust Gas Recirculation) was applied to DME engine modified from conventional Dl diesel engine, and effects of EGR were examined under various EGR temperature. Finally, it was concluded that the cooled EGR is an effective solution to reduce NOx emission from DME engine.

Effect of Ga-doping on the properties of ZnO films grown on glass substrate at room temperature by radio frequency magnetron sputtering (RF 마그네트론 스퍼터링 방법으로 상온에서 유리기판 위에 성장시킨 ZnO의 성질에 미치는 Ga 도핑 효과)

  • Kim, G.C.;Lee, J.S.;Lee, S.K.;Kim, D.H.;Lee, S.H.;Moon, J.H.;Jeon, M.H.
    • Journal of the Korean Vacuum Society
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    • v.17 no.1
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    • pp.40-45
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    • 2008
  • We present the effect of Ga-doping on the electrical, structural and optical properties of ZnO layers with a thickness of ${\sim}500nm$ deposited on glass substrates. Polycrystalline ZnO and Ga-doped ZnO (GZO) layers were deposited by radio frequency (rf) magnetron sputtering at room temperature. Based on the X-ray diffraction (XRD) and transmission electron microscopy (TEM) data, the crystalline quality of Ga-doped ZnO film was improved and GZO film has a preferred orientation along with the (002) crystal direction. The transmittance of the GZO film was enhanced by 10% in the visible region from that of the ZnO film. From photoluminescence (PL) data, the ratio of intensity of near band edge (NBE) emission to deep level (DL) emission was as high as 2.65:1 and 1.27:1 in the GZO and ZnO films, respectively. The res istivities of GZO and ZnO films were measured to be 1.27 and 1.61 $\Omega{\cdot}cm$, respectively. The carrier concentrations of ZnO and GZO film were approximately 1018 and 1020 $cm^2$/Vs, respectively. Based on our experimental results, the Ga-doping improves the electrical, structural and optical properties of ZnO film with potential application.

Leaching of Valuable Metals from NCM Cathode Active Materials in Spent Lithium-Ion Battery by Malic acid (폐리튬이온전지 NCM 양극활물질로부터 말릭산을 이용한 유가금속의 침출)

  • Son, Seong Ho;Kim, Jin Hwa;Kim, Hyun-Jong;Kim, Sun Jung;Lee, Man Seung
    • Resources Recycling
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    • v.23 no.4
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    • pp.21-29
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    • 2014
  • Nickel, cobalt and manganese-based(NCM, $Li(Ni_xCo_yMn_z)O_2$) cathode active materials of spent lithium-ion batteries contained valuable metals such as cobalt(15 ~ 20%), nickel(25 ~ 30%), manganese(10 ~ 15%) and lithium(5 ~ 10%). It was investigated the eco-friendly leaching process for the recovery of valuable metal from spent lithium-ion battery NCM cathode active materials by DL-malic acid($C_4H_5O_6$) as an organic leachant in this research. The experiments were carried out to optimize the process parameters for the recovery of cobalt, nickel and lithium by varying the concentration of lixivant, reductant concentration, solid/liquid ratio and temperature. The leaching solution was analyzed using ICP-OES(Inductively Coupled Plasma Optic Emission Spectrometer). Cathode active materials of 5 wt. % were introduced into the leaching solution which was 2 M DL-malic acid in addition of 5 vol. % $H_2O_2$ at $80^{\circ}C$ and it resulted in the recovery of 99.10% cobalt, 99.80% nickel and 99.75% lithium in 120 min. $H_2O_2$ in DL-malic acid solution acts as an effective reducing agents, which enhance the leaching of metals.

A Study on the Measurement Technique for Injection Rate and the Effects of the Nozzle Hole Number on Injection Characteristics (디젤 인젝터의 분사율 측정 기술과 분공수 변화가 분사특성에 미치는 영향에 관한 연구)

  • 이기형;정재우;이창식
    • Transactions of the Korean Society of Automotive Engineers
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    • v.10 no.3
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    • pp.1-7
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    • 2002
  • Recently, many researches for the improvement of DI diesel engines have been performed to reduce the fuel consumption and exhaust emissions. Among the various factors effect on combustion and emission in Dl diesel engines, one of the most important factors is the characteristics of the fuel spray. Accordingly, the investigation on the characteristics of spray is needed to analyze the diesel combustion exactly, In this study, the measurement technique fur injection rate using the Zeuch method was developed. In addition, the effects of nozzle hole number on the spray and flame were investigated by visualization experiment.