• 제목/요약/키워드: DEP

검색결과 2,469건 처리시간 0.03초

Optical Failure Analysis Technique in Deep Submicron CMOS Integrated Circuits

  • Kim, Sunk-Won;Lee, Hyong-Min;Lee, Hyun-Joong;Woo, Jong-Kwan;Cheon, Jun-Ho;Kim, Hwan-Yong;Park, Young-June;Kim, Su-Hwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제11권4호
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    • pp.302-308
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    • 2011

  • In this paper, we have proposed a new approach for optical failure analysis which employs a CMOS photon-emitting circuitry, consisting of a flip-flop based on a sense amplifier and a photon-emitting device. This method can be used even with deep-submicron processes where conventional optical failure analyses are difficult to use due to the low sensitivity in the near infrared (NIR) region of the spectrum. The effectiveness of our approach has been proved by the failure analysis of a prototype designed and fabricated in 0.18 ${\mu}m$ CMOS process.

  • https://doi.org/10.5573/JSTS.2011.11.4.302 인용 PDF KSCI

Co-existence of Random Telegraph Noise and Single-Hole-Tunneling State in Gate-All-Around PMOS Silicon Nanowire Field-Effect-Transistors

  • Hong, Byoung-Hak;Lee, Seong-Joo;Hwang, Sung-Woo;Cho, Keun-Hwi;Yeo, Kyoung-Hwan;Kim, Dong-Won;Jin, Gyo-Young;Park, Dong-Gun
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제11권2호
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    • pp.80-87
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    • 2011

  • Low temperature hole transport characteristics of gate-all-around p-channel metal oxide semiconductor (PMOS) type silicon nanowire field-effect-transistors with the radius of 5 nm and lengths of 44-46 nm are presented. They show coexisting two single hole states randomly switching between each other. Analysis of Coulomb diamonds of these two switching states reveals a variety of electrostatic effects which is originated by the potential of a single hole captured in the trap near the nanowire.

  • https://doi.org/10.5573/JSTS.2011.11.2.080 인용 PDF KSCI