• Journal of the Korean Electrochemical Society
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• v.8 no.1
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• pp.1-5
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• 2005

Electric double layer capacitors(EDLCS) based on the charge stored at the interface between a hi팀 surface area carbon electrode and an organic electrolyte solution are widely used as a maintenance-free power source for IC memories and microcomputers. The achievement of the excellent performance of the capacitor requires an electrolyte solution which provides high conductivities over a wide temperature range and good electrochemical stabilities to allow the capacitor to be operated at high voltage. The electrochemical capacitor using a carbon material as electrodes and using an organic electrolyte with $1M-LiPF_6$ in PC-GBL-DEC(volume ratio 1:1:2) has specific capacitance of 64F/g.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.961-968
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• 2003

In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $\textrm{cm}^2$/Vs, on/off current ratio of 10$^3$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $\textrm{cm}^2$/Vs, on/off current ratio of 10$\^$6/, threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs.

• Journal of Digital Convergence
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• v.14 no.3
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• pp.391-399
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• 2016

This study aimed to investigate the effect of verbal abuse experience, coping style and resilience on emotional response and practical stress. 261 nursing students participated in this study. The Data were collected using self-report questionnaires from Dec. 1 to Dec. 20, 2014. We found a positive correlation among verbal abuse experience, emotional coping style and stress during clinical practicum; a positive correlation among problem coping style, emotional coping style and resilience; a positive correlation among emotional coping style, emotional response and stress; a negative correlation among resilience and emotional response; a positive correlation among emotional response and stress during clinical practicum. The highest impact factors affecting the emotional response was emotional coping style(${\beta}=.422$). The highest impact factors affecting stress during clinical practicum was verbal abuse experience(${\beta}=.283$). Future efforts should be focused to provide interpersonal relation training and communication skills training for a safe environment of nursing students.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.292-297
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• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

• Journal of IKEEE
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• v.21 no.3
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• pp.284-287
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• 2017

In this study, we examined the simulated electrical characteristics of single-gated feedback field effect transistors (FBFETs) and the influence of channel length variation of the memory window characteristics through the 3D device simulation. The simulations were carried out for various channel lengths from 50 nm to 100 nm. The FBFETs exhibited zero SS(< 1 mV/dec) and a current $I_{on}/I_{off}$ ratio${\sim}1.27{\times}10^{10}$. In addition, the memory windows were 0.31 V for 50 nm-channel-length devices while no memory windows were observed for 100 nm-channel-length devices.

• Journal of agricultural medicine and community health
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• v.26 no.1
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• pp.115-119
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• 2001

The effect of seasonal variation on social statistic data is important. But in health subcenter in rural areas the effect has not been well known. To determine the seasonal index of medical needs in rural communities, the monthly number of patients were analyzed from Jan. 1994 to Dec. 2000. Seasonal index were calculated using 12 months moving averages and median value of each data. The number of patients excluding common cold were analyzed by same method. The seasonal index from Jan. to Dec. were 0.96, 1.08, 1.23, 0.83, 0.82, 0.75, 1.01, 0.99, 1.02, 1.05, 1.13, 1.13. The seasonal index of patients excluding those with common cold were 0.94, 0.90, 1.42, 0.94, 0.91, 0.77, 1.13, 0.92, 0.84, 1.07, 1.10, 1.16. In a rural area, medical needs are decreased on spring and early summer and increase in winter, and that are the influence of rural area.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1345-1346
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• 2007

다양한 게이트 절연막의 펜타신 박막 트랜지스터의 전기적 특성을 atomic force microscope (AFM), X-선 회절을 사용하여 분석하였다. 펜타신 박막 트랜지스터는 thermal evaporator 방법을 사용하여 여러 폴리며 기판위에 제작하였다. Hexamethylsilasane (HMDS), polyvinyl acetate (PVA), polymethyl methacrylate (PMMA)등의 폴리머 기판을 사용하여 다양한 온도에서 증착시켰다. 이 때 PMMA위에 증착시킨 펜타신의 경우가 가장 큰 그레인 크기를 보였고, 가장 적은 트랩 농도를 보였다. 그리고 상부 전극 구조를 가진 박막 트랜지스터를 HMDS 처리를 한 $SiO_2$와 PMMA 절연막을 사용하여 제작하고 비교하였다. 이때 PMMA기판 위에 제작한 트랜지스터는 전계효과 이동도가 ${\mu}_{FET}=0.03cm^{2}/Vs$ 이고, 문턱이전 기울기 0.55V/dec, 문턱전압 $V_{th}=-6V$, on/off 전류비 $>10^5$의 전기적 특성을 보였고, $SiO_2$ 기판위에 제작한 트랜지스터는 전계효과 이동도 ${\mu}_{FET}=0.004cm^{2}/Vs$, 문턱이전 기울기 0.518 V/dec, 문턱전압 $V_{th}=5V$, on/off 전류비 $>10^4$의 전기적 특성을 보였다.

• Journal of Physiology & Pathology in Korean Medicine
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• v.26 no.1
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• pp.59-66
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• 2012

Oxidative stress has been implicated in cutaneous damage in various inflammatory skin diseases, including atopic dermatitis. The present study was undertaken to investigate the antioxidative and anti-inflammatory activities of the extract of Duchesnea chrysantha (DCE). DEC was prepared by extracting with 80% ethanol. Total flavonoids and polyphenols were measured by a colorimetric assay. The free radical scavenging activity of the extract was analyzed by the DPPH (1,1-diphenyl-2-picryl hydrazyl), ABTS (2,2'-azino-bis(3-ethylbenzthiazoline-6-sulfonic acid) and Griess reagent assay. An oxidative product of nitric oxide (NO), was measured in the culture medium by the Griess reaction. The level of prostaglandin $E_2$ ($PGE_2$) was measured by enzyme-linked immunosorbent assay. The expressions of inducible nitric oxide synthase (iNOS) and cyclooxygenase-2 (COX-2) were measured by Western blot analysis. Total flavonoid and polyphenol contents of DCE were included $24.73{\pm}0.45$ and $178.77{\pm}2.65$, respectively. DCE significantly increased electron donating ability (DPPH), nitrite scavenging (NO) and ABTS reducing activity in dose dependant. We investigated the anti-inflammatory effects of DCE on lipopolysaccharide (LPS)-stimulated RAW 264.7 cells. DCE significantly suppressed NO and prdstaglandin $E_2$ ($PGE_2$) in dose dependant. Furthermore, the levels of iNOS and COX-2 protein expressions were markedly suppressed by the treatment with DCE in a dose dependent manner. These results suggest that DEC may has value as natural product with its high quality functional components, antioxidative and anti-inflammatory activities.

• Journal of Preventive Medicine and Public Health
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• v.35 no.4
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• pp.351-358
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• 2002

Objective : To evaluate the relationship between physical activity and the risk of hip fracture in the elderly Korean people. Methods : The study population was a Physical Activity Subcohort (n=8,908) extracted from the Korean Elderly Pharmacoepidemiological Cohort (KEPEC). Physical activity information was obtained from a mailed questionnaire surveys. The outcome data was collected from claims data gathered between Jan. 1993 and Dec. 1998. A hospital survey relating to potential cases was conducted to confirm the final diagnoses. The abstracted data was reviewed by a medical doctor before the final diagnoses were confirmed. A mailing questionnaire survey was performed to obtain information on potentially confounding variables, including alcohol intake, smoking habits, weight, height and postmenopausal duration. There were 79 confirmed cases hospitalized due to hip fractures between Jan. 1993 and Dec. 1998. Relative risk of physical activity scores on the hip fracture, and their 95% confidence intervals, were estimated by a Cox's proportional hazard model using SAS for Windows ver.6.12. Results : Compared to the reference group, the adjusted relative risk of hip fracture associated with the most physical active category: after controlling for age, weight and alcohol intake in the males, and for weight, alcohol intake and postmenopausal duration in the females, were 1.04 (95% CI=0.35-3.06) and 0.f4 (95% CI=0.26-0.77), respectively. Conclusions : Physical activity may protect elderly women from hip fracture.

• Journal of Convergence for Information Technology
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• v.11 no.7
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• pp.104-110
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• 2021

A novel selective oxidation process has been developed for low source/drain (S/D) series resistance of the fin channel metal oxide semiconductor field effect transistor (MOSFET). Using this technique, the selective oxidation fin-channel MOSFET (SoxFET) has the gate-all-around structure and gradually enhanced S/D extension regions. The SoxFET demonstrated over 70% reduction in S/D series resistance compared to the control device. Moreover, it was found that the SoxFET behaved better in performance, not only a higher drive current but also higher transconductances with suppressing subthreshold swing and drain induced barrier lowering (DIBL) characteristics, than the control device. The saturation current, threshold voltage, peak linear transconductance, peak saturation transconductance, subthreshold swing, and DIBL for the fabricated SoxFET are 305 ㎂/㎛, 0.33 V, 13.5 𝜇S, 76.4 𝜇S, 78 mV/dec, and 62 mV/V, respectively.