• Journal of IKEEE
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• v.21 no.4
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• pp.416-419
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• 2017

In this paper, we propose a new digital delay-locked loop (DLL) for high-speed DDR3/DDR4 SDRAMs. The proposed digital DLL adopts a fine delay line using phase interpolation to eliminate the jitter increase problem due to the boundary switching problem. In addition, the proposed digital DLL utilizes a new gradual search algorithm to eliminate the harmonic lock problem. The proposed digital DLL is designed with a 1.1 V, 38-nm CMOS DRAM process and has a frequency operating range of 0.25-2.0 GHz. It has a peak-to-peak jitter of 1.1 ps at 2.0 GHz and has a power consumption of about 13 mW.

• Journal of Astronomy and Space Sciences
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• v.29 no.3
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• pp.315-320
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• 2012

We developed a mass-memory chip by staking 1 Gbit double data rate 2 (DDR2) synchronous dynamic random access memory (SDRAM) memory core up to 4 Gbit storage for future satellite missions which require large storage for data collected during the mission execution. To investigate the resistance of the chip to the space radiation environment, we have performed heavy-ion-driven single event experiments using Heavy Ion Medical Accelerator in Chiba medium energy beam line. The radiation characteristics are presented for the DDR2 SDRAM (K4T1G164QE) fabricated in 56 nm technology. The statistical analyses and comparisons of the characteristics of chips fabricated with previous technologies are presented. The cross-section values for various single event categories were derived up to ~80 $MeVcm^2/mg$. Our comparison of the DDR2 SDRAM, which was fabricated in 56 nm technology node, with previous technologies, implies that the increased degree of integration causes the memory chip to become vulnerable to single-event functional interrupt, but resistant to single-event latch-up.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.1
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• pp.45-48
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• 2010

An inter-pin skew compensation scheme is proposed, which minimizes the inter-pin skew of parallel interface induced by unequal trace length and loading of printed circuit board (PCB). The proposed scheme measures the inter-pin skew and compensates during power-up with simple hardware. The proposed scheme is applied to 3.2-Gb/s/pin DDR4 SDRAM and implemented in a 0.18 m CMOS process. The inter-pin skew is compensated in 324-cycles of 400-MHz clock and the skew is compensated to be less than 24-ps.

• Journal of IKEEE
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• v.18 no.4
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• pp.509-516
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• 2014

CRC feature in a high-speed semiconductor memory devices such as DDR4/GDDR5 increases the data reliability. Conventional CRC method have a massive area overhead and long delay time. It leads to insufficient internal timing margins for CRC calculation. This paper, presents a CRC code method that provides error detection and a real-time matrix type CRC. If there are errors in the data, proposed method can alert to the system in a real-time manner. Compare to the conventional method(XOR 6 stage ATM-8 HEC code), the proposing method can improve the error detection circuits up to 60% and XOR stage delay by 33%. Also the real-time error detection scheme can improve the error detection speed to agerage 50% for the entire data bits(UI0~UI9).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.3-5
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• 2000

1.8V,4Gb DDR SDRAM설계 및 제작을 수행하였다. DRAM동작 시 발생하는 Bit Line간 CouplingNoise를 보상하기 위한 Twisted Open Bit Line 구조를 제안하였다. Low Voltage Operation으로 인한 Bit Line Sense Amplifier 의 동작 저하를 보상하기 위한 BL S/A Pre-Sensing 방식 및 Reference Bit Line Voltage Calibration 구조를 제안하였다. Chip면적 증가로 인한 동작속도 감소의 보상을 위해 Repeater Driver 구조를 Core 및 Periphery Circuit에 적용하여 동작 대비 Chip 면적의 증가를 최소화 하도록 하였다.