• Title/Summary/Keyword: DC leakage current

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Electrical Properties and Stability of La2O3 Doped ZnO-Pr6O11-Based Varistor Ceramics (La2O3 Doped ZnO-Pr6O11계 바리스터 세라믹스의 전기적 성질 및 안정성)

  • Nahm, Choon-Woo
    • Journal of the Korean Ceramic Society
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    • v.43 no.6 s.289
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    • pp.383-388
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    • 2006
  • The varistor properties and DC accelerated aging characteristics of $ZnO-Pr_{6}O_{11}-CoO-Cr_{2}O_{3}$-based varistors were investigated at different $La_{2}O_3$ contents in the range of $0{\sim}2.0mol%$. The varistors doped with 0.5 mol% $La_{2}O_3$ exhibited good nonlinearity, with 81.6 in nonlinear coefficient. Increasing the $La_{2}O_3$ content further to 2.0 mol% caused the sintered density to increase, and the breakdown voltage and nonlinearity to decrease abruptly. The varistors with 0.5 mol% $La_{2}O_3$ exhibited the high electrical stability, with -1.14% in variation rate of breakdown voltage, -3.7% in variation rate of nonlinear coefficient, and +100% in variation rate of leakage current for specified DC accelerated aging stress condition (95% of breakdown voltage/$150^{\circ}C$/24 h).

Single-Power-Conversion Series-Resonant AC-DC Converter with High Efficiency (고효율을 갖는 단일 전력변환 직렬 공진형 AC-DC 컨버터)

  • Jeong, Seo-Gwang;Cha, Woo-Jun;Lee, Sung-Ho;Kwon, Bong-Hwan
    • The Transactions of the Korean Institute of Power Electronics
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    • v.21 no.3
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    • pp.224-230
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    • 2016
  • In this study, a single-power-conversion series-resonant ac-dc converter with high efficiency and high power factor is proposed. The proposed ac-dc converter consists of single-ended primary-inductor converter with an active-clamp circuit and a voltage doubler with series-resonant circuit. The active-clamp circuit clamps the surge voltage and provides zero-voltage switching of the main switch. The series-resonant circuit consists of leakage inductance $L_{lk}$ of the transformer and resonant capacitors $ C_{r1}$ and $ C_{r2}$. This circuit also provides zero-current switching of output diodes $D_1$ and $D_2$. Thus, the switching loss of switches and reverse-recovery loss of output diodes are considerably reduced. The proposed ac-dc converter also achieves high power factor using the proposed control algorithm without the addition of a power factor correction circuit and a dc-link electrolytic capacitor. A detailed theoretical analysis and the experimental results for a 1kW prototype are discussed.

A simple 3-phase inverter topology to improve power conversion efficiency

  • Phan, Dang-Minh;Lee, Hong-Hee
    • Proceedings of the KIPE Conference
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    • 2014.11a
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    • pp.25-26
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    • 2014
  • Renewable energy sources such as wind and solar power are free and can be easily harvested everywhere. However, one of the biggest problems when using this kind of energy source is how to increase the efficiency of power conversion system. This paper introduces a modified 3-phase inverter in order to increase the power conversion efficiency. By adding 3 bi-directional switches at output of the inverter, the current flow back DC source during zero state is prevented to minimize leakage current, so that the efficiency of whole system is increased. The proposed topology also improves the power quality to satisfy the total harmonics distortion (THD) requirement. In order to verify the effectiveness of the proposed topology, simulation results are carried out using Simulink in MATLAB.

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The Characteristics Analysis of GIDL current due to the NBTI stress in High Speed p-MOSFET (고속용 p-MOSFET에서 NBTI 스트레스에 의한 GIDL 전류의 특성 분석)

  • Song, Jae-Ryul;Lee, Jong-Hyung;Han, Dae-Hyun;Lee, Yong-Jae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.2
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    • pp.348-354
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    • 2009
  • It has analyzed that the device degradation by NBTI (Negative Bias Temperature Instability) stress induced the increase of gate-induced-drain-leakage(GIDL) current for p-MOSFETs. It is shown that the degradation magnitude, as well as its time, temperature, and field dependence, is govern by interface traps density at the silicon/oxide interface. from the relation between the variation of threshold voltage and subthreshold slope, it has been found that the dominant mechanism for device degradation is the interface state generation. From the GIDL measurement results, we confined that the EHP generation in interface state due to NBTI stress led to the increase of GIDL current. Therefore, one should take care of the increased GIDL current after NBTI stress in the ultra-thin gate oxide device. Also, the simultaneous consideration of reliability characteristics and dc device performance is highly necessary in the stress engineering of nanoscale CMOSFETs.

200[W] Half-Bridge LLC Series Resonant Converter for driving LED Lamp (LED 조명장치 구동용 200[W]급 하프브리지 LLC 직렬공진형 컨버터)

  • Han, Woo-Yong;Park, Hyo-Sik
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.11
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    • pp.4483-4488
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    • 2010
  • In comparison with some other light sources, LED has merits such as long lifetime, pollution free, and high energy efficiency. Lately, due to development of LED with high brightness and capacity, LED, which has been applied in display system only, has applied in the field of lighting system. Driving current of power LED has to be controlled below the designed value. In this paper, half-bridge LLC series resonant converter, which has the current limiting function, has been described. Half-bridge LLC series resonant converter allows in relatively wide input voltage and output load range when compared to the other resonant converter. Also, it is possible to reduce a magnetic component, because leakage inductance of transformer is used as a resonant inductance. It has been validated by designing and testing 200[W] half-bridge LLC converter of DC24[V] output voltage for LED lamp driver, which includes a current limiting function and power factor correction(PFC) function.

Stability Of $ZnO-Pr_{6}O_{11}-CoO-Cr_{2}O_{3}-Y_{2}O_{3}$Based Varistors with Cooling Rate (냉각속도에 따른 $ZnO-Pr_{6}O_{11}-CoO-Cr_{2}O_{3}-Y_{2}O_{3}$계 바리스터의 안정성)

  • 류정선;정영철;김향숙;남춘우
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.410-414
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    • 2001
  • The microstructure, V-I characteristics, and stability of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Y$_2$O$_3$based vairstors were investigated with cooling rate in the range of 2~8$^{\circ}C$/min. The cooling rate relatively weakly affected the microstructure, and the varistor voltage and the leakage current in the V-I chracteristics. But the nonlinear exponent relatively strongly affected by cooling rate. And the cooling rate also greatly affected the stability for DC stress. In gross, the varistors cooled with 4$^{\circ}C$/min exhibited the highest performance in the densification, nonlinearity, and stability. Especially, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent is -1.44% and -4.85%, respectively, under more severe DC stress such as (0.80 V$_{1mA}$9$0^{\circ}C$/12 h)+(0.85 V$_{1mA}$115$^{\circ}C$/12 h)\`(0.90 V$_{1mA}$12$0^{\circ}C$/12 h)+(0.95 V$_{1mA}$1$25^{\circ}C$/12 h)+(0.95 V$_{1mA}$15$0^{\circ}C$/12 h). It should be emphasized that the stability of these varistors is much superior to that of others.s.of others.s.

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An Experiment and Analysis for Standardize Measurement on CCFL (냉음극 형광램프의 표준화 계측을 위한 실험과 분석)

  • Jin, Dong-Jun;Jeong, Jong-Mun;Jeong, Hee-Suk;Kim, Jin-Shon;Lee, Min-Kyu;Kim, Jung-Hyun;Koo, Je-Huan;Gwon, Gi-Cheong;Kang, June-Gill;Choi, Eun-Ha;Cho, Guang-Sup
    • Journal of the Korean Vacuum Society
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    • v.17 no.4
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    • pp.331-340
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    • 2008
  • A method of measuring the current and voltage is suggested in the circuit of cold cathode fluorescent lamps (CCFLs) which are driven at a high frequency of $50{\sim}100\;kHz$ and a high voltage of several kV. It is difficult to measure the current and voltage in the lamp circuit, because the impedance of the probe at high voltage side causes the leakage current and the variation of luminance. According to the analysis of equivalence circuit with the probe impedance and leakage current, the proper measuring method is to adjust the input DC voltage and to keep the specific luminance when the probe is installed at a high voltage circuit. The lamp current is detected with a current probe or a high frequency current meter at the ground side and the voltage is measured with a high voltage probe at the high voltage side of lamp. The lamp voltage($V_C$) is measured between the ballast capacitor and the lamp electrode, and the output voltage($V_I$) of inverter is measured between inverter output and ballast capacitor. As the phases of lamp voltage($V_C$) and current ($I_G$) are nearly the same values, the real power of lamp is the product of the lamp voltage($V_C$) by the lamp current($I_G$). The measured value of the phase difference between inverter output voltage($V_I$) and lamp current($I_G$) is appreciably deviated from the calculated value at $cos{\theta}=V_C/V_I$.

A Study on the Fabrication of the Sensor Module for the Detection of Resistive Leakage Current (Igr) in Real Time and Its Reliability Evaluation (실시간 Igr 검출을 위한 센서 모듈의 제작 및 신뢰성 평가에 관한 연구)

  • Lee, Byung-Seol;Choi, Chung-Seog
    • Journal of the Korean Society of Safety
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    • v.33 no.1
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    • pp.28-34
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    • 2018
  • The purpose of this study is to fabricate a sensor module to detect the resistive leakage current (Igr) in real time that occurs to low voltage electric lines and to verify its reliability. In the case of the developed sensor module, wires are inserted into the zero current transformer (ZCT) and current transformer (CT) in advance and then the branch line is connected to the circuit breaker. The measurement result of the resistance of the distribution panel equipped with the developed sensor module shows that the resistance is $0.151m{\Omega}$ between the R and R phases, $0.169m{\Omega}$ between the S and S phases, and $0.178m{\Omega}$ between the T and T phases, respectively. The insulation resistance measured at AC 500 V and 1,000 V is $0.08m{\Omega}$ between the R, S, T and N phases, respectively. Then, the insulation resistance measured at DC 500 V is $83.3G{\Omega}$ between the R, S, T and G terminal, respectively. In addition, the applied withstanding voltage is AC 220 V/380 V/440 V and it was found that characteristics between all phases are good. This study measured the standby power by installing the developed sensor module at the rear of the MCCB and switching the circuit breaker on sequentially. The standby power is 1.350 W when one circuit breaker is turned on, 1.690 W when 2 circuit breakers are turned on, and 4.371 W when 10 circuit breakers are turned on. This study also verified the reliability of the standby power of the distribution panel equipped with the developed sensor module using the Minitab Program (Minitab PGM). Since the analysis shows the statistical average of 1.34627 in the reliable range of normal distribution, standard deviation of 0.001874, AD of 0.554, and P value of 0.140, it is found that the distribution panel equipped with the developed sensor module has high reliability.

Low-Power Voltage Converter Using Energy Recycling Capacitor Array

  • Shah, Syed Asmat Ali;Ragheb, A.N.;Kim, HyungWon
    • Journal of information and communication convergence engineering
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    • v.15 no.1
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    • pp.62-71
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    • 2017
  • This paper presents a low-power voltage converter based on a reconfigurable capacitor array. Its energy recycling capacitor array stores the energy during a charge stage and supplies the voltage during an energy recycle stage even after the power source is disconnected. The converter reconfigures the capacitor array step-wise to boost the lost voltage level during the energy recycle stage. Its energy saving is particularly effective when most of the energy remaining in the charge capacitors is wasted by the leakage current during a longer sleep period. Simulations have been conducted using a voltage source of 500 mV to supply a $V_{DD}$ of around 800 mV to a load circuit consisting of four 32-bit adders in a 65-nm CMOS process. Results demonstrate energy recycling efficiency of 85.86% and overall energy saving of 40.14% compared to a conventional converter, when the load circuit is shortly active followed by a long sleep period.

Effects Sintering Temperature on Electrical Properties of (Pr, Co, Cr, La)-doped ZnO Varistors ((Pr, Co, Cr, La)-doped ZnO 바리스터의 전기적 특성에 미치는 소결온도효과)

  • Nahm, Choon-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.12
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    • pp.1085-1091
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    • 2006
  • The microstructure, electrical properties, and its stability of (Pr, Co, Cr, La)-doped ZnO varistors were investigated at different sintering temperatures in the range of $1230{\sim}1300^{\circ}C$. As the sintering temperature increased, the sintered density increased from 5.50 to $5.77g/cm^3$, the varistor voltage decreased from 777.9 to 108.0 V/mm, the nonlinear coefficient decreased from 77.0 to 7.1, and the leakage current increased from $0.4{\mu}A\;to\;50.6{\mu}A$. On the other hand, the donor concentration increased from $0.90{\times}10^{18}\;to\;2.59{\times}10^{18}/cm^3$ and the barrier height decreased from 1.89 to 0.69 eV with increasing temperature. The stability of nonlinear electrical properties was obtained from sintering temperature of $1260^{\circ}C$. The varistors sintered at $1260^{\circ}C$ marked the high electrical stability, with $%{\Delta}V_{1mA}=+1.9%,\;%{\Delta}a=10.6%,\;and\;%{\Delta}I_L=+20%$ for DC accelerated aging stress state of $0.95V_{1mA}/150^{\circ}C/24h$.