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http://dx.doi.org/10.6109/JKIICE.2009.13.2.348

The Characteristics Analysis of GIDL current due to the NBTI stress in High Speed p-MOSFET  

Song, Jae-Ryul (동의대학교 전자공학과)
Lee, Jong-Hyung (동의대학교 전자공학과)
Han, Dae-Hyun (동의대학교 전자공학과)
Lee, Yong-Jae (동의대학교 전자공학과)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.13, no.2, 2009 , pp. 348-354 More about this Journal
Abstract
It has analyzed that the device degradation by NBTI (Negative Bias Temperature Instability) stress induced the increase of gate-induced-drain-leakage(GIDL) current for p-MOSFETs. It is shown that the degradation magnitude, as well as its time, temperature, and field dependence, is govern by interface traps density at the silicon/oxide interface. from the relation between the variation of threshold voltage and subthreshold slope, it has been found that the dominant mechanism for device degradation is the interface state generation. From the GIDL measurement results, we confined that the EHP generation in interface state due to NBTI stress led to the increase of GIDL current. Therefore, one should take care of the increased GIDL current after NBTI stress in the ultra-thin gate oxide device. Also, the simultaneous consideration of reliability characteristics and dc device performance is highly necessary in the stress engineering of nanoscale CMOSFETs.
Keywords
p-MOSFETs; NBTI; GIDL; degradation;
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