1 |
Y. Yang et al. 'Characteristics and Fluctuation of Negative Bias Temperature Instability in Si Nanowire FET' IEEE EDL, Vol. 29, No. 3, pp. 242-245, March. 2008
DOI
ScienceOn
|
2 |
J. C. Liao, et al 'Investigation of Bulk Traps Enhanced Gate-Induced Leakage Current in Hf-Based MOSFETs' IEEE EDL, Vol. 29, No. 5, pp.509-511, May 2008
DOI
ScienceOn
|
3 |
D. S. Ang and S. Wang 'Insight Into 'he Suppressed Recovery of NBTI-Stressed Ultrathin Oxynitride Gate p-MOSFET' IEEE Electron Device Lett. Vol. 27, No. 9, pp. 755-758, Sep. 2006
DOI
ScienceOn
|
4 |
M. Casse, et al 'Carrier transport in HfO2/metal gate MOSFETs: Physical insight into critical parameters,' IEEE Trans. Electron Devices, vol. 53, no. 4, pp. 759-768, April 2006
DOI
ScienceOn
|
5 |
G. Ribes, et al 'Review on high-k dielectrics reliability issues,' IEEE Trans. Device Mater. Rel., vol. 5, no. 1, pp. 519-526, March 2005
|
6 |
D.L Kwong et al, 'Dynamic NBTI of p-MOS Transistors and Its Impact on MOSFET Scaling' IEEE EDL, Vol. 23, No. 12, pp.734-736, Dec. 2002
DOI
ScienceOn
|
7 |
I.S. Han et al. 'New Observation of Mobility and Reliability Dependance on Mechanical Film Stress in Strained Silicon CMOSFETs' IEEE Trans. on ED, Vol.55 No.6 pp.1352-1358. June. 2008
DOI
ScienceOn
|