• Proceedings of the KIEE Conference
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• summer
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• pp.485-487
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• 2004

High-voltage gas-insulated circuit-breaker must interrupt short-circuit current successfully when breakdown occurs in electric power system. Among many test-duties, Basic Terminal fault T100a(BTF T100a) is the one of the severest duties because of its high DC component of short-circuit current. In this paper, we developed 245kV 50kA gas circuit breaker using control circuits to reduce DC component while interrupting short-circuit current, then got good performance through high-power tests in Korea Electrotechnology Research Institute(KERI) and KEMA

• Journal of radiological science and technology
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• v.2 no.1
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• pp.71-83
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• 1979

Not only the insulating oil used for extra high voltage and high capacity transformer has a lot of possibilites of a corona discharge in oil, but the oil is easily degraded by a response of light oxidization. This study is either to classfy, with priority given to a transformer oil produced in Korea belonging to, the insulating oil No. 2, the sample irradiated the ultraviolet rays, treated a corona discharge in oil by a high voltage DC source and done nothing, or to measure the characteristics of breakdown, V-i, I-t and electrode material. The obtained results can be summarized as followings: (1) Unless the sample is contacted with the air, on the process to irradiate the ultraviolet rays, the sample less influence on the changes of the electric characteristics. At the same time, if the sample is contacted with the air and irradiated the ultraviolet rays, the sample shows a remarkable changes of the electric characteristics, and a declined breakdown strength. This tells us that the influence of the light irradiation must be considered as a primary factor of degrading the insulating oil. (2) In the oil treated by a corona discharge, breakdown voltage is declined more than in the oil not to be treated with it. This means that the degradation of the insulating oil is getting increased by a corona discharge in oil. (3) It shows that the increase of conducting current has little to do with breakdown voltage. (4) The conducting current depending on the electrode materials can be put in order by value as Al>Cu>Fe. This is due to the differences of the work function of each metals, and an chemical reaction with the insulating oil. These result can be a great help in verifying the degradation progress of the insulating oil and furnish a new technical information to the manufacturers of the insulating oil and electrical equipment designers and operators. Besides, this study would be helpful to improve the electrical characteristics of the insulating oil produced in Korea.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.63-68
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• 2003

The DC and RF characteristics of $In_{0.5}Ga_{0.5}P/In_{0.22}Ga_{0.78}As/GaAs$ p-HEMTs with a gate oxide layer of various thicknesses ($50{\;}{\AA},{\;}300{\;}{\AA}$) were investigated and compared with those of a Schottky-gate p-HEMT without the gate oxide layer. A prominent improvement in the breakdown voltage characteristics were observed for a p-HEMT having a gate oxide layer, which was implemented by using a liquid phase oxidation technique. The on-state breakdown voltage of the p-HEMT having the oxide layer of $50{\;}{\AA}$was ~2.3 times greater than that of a Schottky-gate p-HEMT. However, the p-HEMT having the gate oxide layer of $300{\;}{\AA}$ suffered from a poor gate-control capability due to the drain induced barrier lowering (DIBL) resulting from the thick gate oxide inspite of the lower gate leakage current and the higher on-state breakdown voltage. The results for a primitive p-HEMT having the gate oxide layer without any optimization of the structure and the process indicate the potential of p-HEMT having the gate oxide layer for high-power applications.

• Korean Journal of Materials Research
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• v.3 no.3
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• pp.310-315
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• 1993

The effects of RT A treatment on the breakdown strengths were studied for tantalum pentoxide(${Ta_2}{O_5}$) films prepared by thermal oxidation of dc-sputtered Ta(400$\AA$) on p-type (100) Si wafer. While the relative dielectric constants of the RT A -treated specimens were not remarkably affected, the breakdown strengths of the RTA-treated specimens were greatly changed by RTA temperature and time. After the RTA treatment, the breakdown strengths of the specimens RTA-treated at the temperature below the crystallization temperature were increased to 5.4MV /cm, while those of the specimens RTA -treated at the temperature above it were decreased to 0.5MV /cm. RTA time-independence of the flat-bant voltage shift refleted that the RT A post-annealing effects on the breakdown strengths were not due to the interface reaction between the ${Ta_2}{O_5}$ layer and the Si substrate but, through the RBS analysis, to densification of the ${Ta_2}{O_5}$ films.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.3
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• pp.215-220
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• 1999

$SO_2$and CO gas removal characteristics of a wire-to-cylinder type nonthermal discharge plasma reactor in various applied voltage (-dc, ac, fast rising pulse and high frequency pulse) and a crossed dc magnetic field have been investigated. The experiment has been emphasized on the oxidizing characteristics of $SO_2$ and CO gas by $O_3$ and the applying of a crossed magnetic field, which would induce the cyclotronic and drift motions of electrons making the residual time longer in the removal airgap space. And it also would enhance the energy of electrons and the electrophysicochemical actions to remove the pollutant gases effectively. It is found thatthe corona onset voltage and the breakdown voltage were decreased with increasing the crossed magnetic field and decrease initial fed $SO_2$and CO concentration. As a result, a higher ozone generation and $SO_2$ and CO gas removal rate of 20[%] can be obtained with -dc, ac and fast rising pulse corona discharges in the crossed dc current-induced magnetic field. But high frequency pulse didn't show effect in applying of a crossed magnetic field.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.226-229
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• 2003

Following the successful development of practical high temperature superconducting (HTS) wires, there has been renewed activity in the development of superconducting power equipments. HTS equipments must be operated in the coolant, such as liquid nitrogen (L$N_2$) or cooled by cooler, such as GM-cryocooler to maintain the temperature below critical temperature. In this paper, dielectric strength of some insulating materials, such as epoxy, teflon, and glass fiber reinforced plastic (GFRP) in L$N_2$was measured. Surface breakdown voltage of GFRP which is basic property in design of HTS solenoid coil was measured. Epoxy is a goof insulating material but it is fragile at cryogenic temperature. The multi-layer insulating method of current lead is suggested to compensate this fragile property. It consists of teflon tape layer and epoxy layer fixed with texture. Based on these measurements, the 6.6㎸ class HTS magnet for DC reactor type high-T$_{c}$ superconducting fault current limiter (SFCL) was successfully fabricated and tested.d.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.9
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• pp.1-6
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• 2009

We fabricated Gunn diodes with a double heat sink which has anode heat sink as well as cathode heat sink for efficient heat dissipation. We compared the DC characteristics of a double heat sink diode with a conventional cathode heat sink Gunn diode. It was shown that the Gunn diode with a single heat sink has the threshold voltage of 3 V, the peak current of 744 mA and the breakdown voltage of 4.8 V. Also, the Gunn diode with a double heat sink showed the threshold voltage of 2.5 V, the peak current of 778 mA and the breakdown voltage over 5 V.

• Journal of IKEEE
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• v.20 no.3
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• pp.279-284
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• 2016

This paper presents a two stage L-band power amplifier realized with a $0.32{\mu}m$ Silicon-On-Insulator (SOI) CMOS technology. To overcome a low breakdown voltage limit of MOSFET, stacked-FET structures are employed, where three transistors in the first stage amplifier and four transistors in the second stage amplifier are connected in series so that their output voltage swings are added in phase. The stacked-FET structures enable the proposed amplifier to achieve a 21.5 dB small-signal gain and 15.7 dBm output 1-dB compression power at 1.9 GHz with a 122 mA DC current from a 4 V supply. The amplifier delivers a 19.7 dBm. This paper presents a two stage L-band power amplifier realized with a $0.32{\mu}m$ Silicon-On-Insulator (SOI) CMOS technology. To overcome a low breakdown voltage limit of MOSFET, stacked-FET structures are employed, where three transistors in the first stage amplifier and four transistors in the second stage amplifier are connected in series so that their output voltage swings are added in phase. The stacked-FET structures enable the proposed amplifier to achieve a 21.5 dB small-signal gain and 15.7 dBm output 1-dB compression power at 1.9 GHz with a 122 mA DC current from a 4 V supply. The amplifier delivers a 19.7 dBm saturated output power with a 16 % maximum Power Added Efficiency (PAE). A bond wire fine tuning technology enables the amplifier a 23.67 dBm saturated output power with a 20.4 % maximum PAE. The die area is $1.9mm{\times}0.6mm$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1429-1435
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• 2004

In this work, high performance broadband amplifier MMIC including all the matching and biasing components, and electrostatic discharge (ESD) protection circuit was developed for K/Ka band applications. Therefore, external biasing or matching components were not required for the operation of the MMIC. STO (SrTiO3) capacitors were employed to integrate the DC biasing components on the MMIC, and miniaturized LC parallel ESD protection circuit was integrated on MMIC, which increased ESD breakdown voltage from 10 to 300 V. A pre-matching technique and RC parallel circuit were used for the broadband design of the amplifier MMIC. The amplifier MMIC exhibited good RF performances and good stability in a wide frequency range. The chip size of the MMICs was $1.7{\pm}0.8$ mm2.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1617-1620
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• 1999

In this work, the effect of blend on physical and electrical properties investigated. The two kinds of low-density polyethylene (LDPE) whose densities are evaluated at $0.9179[g/cm^3]$ and $0.9192[g/cm^3]$, respectively, were used and blended according to the different blend ratio. The LDPE with the blend ratio of 50[wt%] represented the lowest impulse breakdown strength, $F_{BImp}$ at $30[^{\circ}C]$, but the highest $F_{BImp}$ at $90[^{\circ}C]$. DC breakdown strength, $F_{BDC}$. decreased with the increase of blend ratio at $30[^{\circ}C$, but increased at $60[^{\circ}C]$. The current density decreased with a blend ratio up to 75 [wt%] at $90[^{\circ}C]$. By analyzing the diffraction patterns of XRD, we found that the LDPE with the blend ratio of 50 [wt%] represented the largest crystal size of (020) plane. We investigated the relationship between the effect of blend and electrical properties and these results are discussed.