Improved Breakdown Voltage Characteristics of p-HEMT with an Oxidized GaAs Gate |
I-H. Kang
(Department of Information and Communications, Kwangju Institute of Science and Technology (K-JIST))
Lee, J-W. (Department of Information and Communications, Kwangju Institute of Science and Technology (K-JIST)) S-J. Kang (Department of Information and Communications, Kwangju Institute of Science and Technology (K-JIST)) S-J. Jo (Department of Information and Communications, Kwangju Institute of Science and Technology (K-JIST)) S-K. In (Department of Information and Communications, Kwangju Institute of Science and Technology (K-JIST)) H-J. Song (Department of Information and Communications, Kwangju Institute of Science and Technology (K-JIST)) Kim, J-H. (Department of Information and Communications, Kwangju Institute of Science and Technology (K-JIST)) J-I. Song (Department of Information and Communications, Kwangju Institute of Science and Technology (K-JIST)) |
1 | M. H. Somerville, R. Blanchard, J. A. del Alamo, G. Duh, P. C. Chao, 'A new gate current extraction technique for measurement of on-state breakdown voltage in HEMTs,' IEEE Elec. Dev. Lett., vol. 19, pp. 405 -407, Nov 1998 DOI ScienceOn |
2 | R. Anholt, 'Drain barrier lowering in HEMTs,' GaAs IC Symposium 1998 Technical Digest, pp. 99-102, 1998 DOI |
3 | K. Inoue, Y. Ikeda, H. Masato, T. Matsuno, K. Nishii, 'Novel GaN-based MOS HFETs with thermally oxidized gate insulator,' IEDM 2001 Technical Digest, pp. 25.2.1 -25.2.4, 2001 DOI |
4 | Jau-Yi Wu, Hwei-Heng Wang, Yeong-Her Wang, Mau-Phon Houng, 'GaAs MOSFET's Fabrication with a selective liquid phase oxidation gate,' IEEE Trans. Elec. Dev., vol. 48, pp. 634-637, Apr. 2001 DOI ScienceOn |
5 | M. Hong, J. N. Baillargeon, J. Kwo, J. P. Mannaerts, A. Y. Cho, 'First demonstration of GaAs CMOS,' ISCS 2000 Technical Digest, pp. 345-350, 2000 DOI |
6 | G. Meneghesso, A. Mion, A. A. Neviani, M. Matloubian, J. Brown, M. Hafizi, L. Takyiu, C. Canali, M. Pavesi, M. Manfredi, E. Zanoni, 'Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs,' Electron Devices Meeting, pp. 43-46, 1996 DOI |
7 | T. Enoki, K. Arai, A. Kohzen, Y. Ishii, 'InGaAs/InP double channel HEMT on InP,' 4th International conference on IPRM, pp. 14-24, 1992 DOI |
8 | J. C. Huang, G. S. Jackson, S. Shanfield, A. Platzker, P. K. Saledas, C. Weichert, 'An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applications,' IEEE Trans. Microwave Theory and Techniques, vol. 41, pp. 752 -759, May 1993 DOI ScienceOn |
9 | K. W. Eisenbeiser, J. R. East, G. I. Haddad, 'Theoretical analysis of the breakdown voltage in pseudomorphic HFET's,' IEEE Trans. Elec. Dev., vol. 43, pp. 1778-1787, Nov. 1996 DOI ScienceOn |
10 | M. H. Somerville, J. A. del Alamo, 'A model for tunneling-limited breakdown in high-power HEMTs,' IEEE Elec. Dev. Meeting, pp. 35-38, 1996 DOI |
11 | S. R. Bahl, J. A. del Alamo, J. Dickmann, S. Schildberg, 'Off-state breakdown in InAlAs/InGaAs MODFET's,' IEEE Trans. Electron. Dev., vol. 42, pp. 15-22, Jan. 1995 DOI ScienceOn |
12 | G. Meneghesso, A. Neviani, R. Oesterholt, M. Matloubian, T. Liu, J.J. Brown, C. Canali, and E. Zanoni, 'On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness,' IEEE Trans. Electron Devices, Vol. 46, pp.2-9, Jan. 1999 DOI ScienceOn |