• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.103-104
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• 2008

In this paper we report upon an investigation into the effect of DC bias voltage on the electrical and optical properties of Gallium doped zinc oxide (GZO) film. GZO films were deposited on glass substrate without substrate temperature by RF magnetron sputtering from a ZnO target mixed with 5 wt% $Ga_2O_3$. we investigated sample properties of bias voltage change in 0 to -60 V. We were able to achieve as low as $5.89\times10^{-4}$ ${\Omega}cm$ and transmittance over 87%. without substrate temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.373-376
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• 2009

In this paper we report upon an investigation into the effect of DC bias voltage on the electrical and optical properties of Gallium doped zinc oxide (GZO) film. GZO films were deposited on glass substrate without substrate temperature by RF magnetron sputtering from a ZnO target mixed with 5 wt% $Ga_{2}O_{3}$. we investigated sample properties of bias voltage change in 0 to -60 V. We were able to achieve as low as $5.89{\times}10^{-4}{\Omega}cm$ and transmittance over 88 %. without substrate heating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.699-702
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• 2002

A DC current sensor is disclosed in which two pairs of saturable cores are provided so as enclose a conductor carrying a direct current to be measured. On each of the saturable cores, a bias winding, a feedback winding and an output winding are wound. Circuit for detection of an asymmetry in the magnetization current, generated by a reference alternating voltage, in a signal-conditioner. The reference alternating voltage is fed to the respective series circuits such that no resultant induction current is induced in the modulating current. The voltages over the resistor form input signals for two peak value detectors, the strength of the output signal of which represents the degree of asymmetry of magnetization current. This paper describes the development a DC current sensor and its signal-conditioner.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.202-205
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• 2010

In this study, the etch properties of $Al_2O_3$ thin films deposited by atomic layer deposition were investigated as a function of the $O_2$ content in $BCl_3$/Ar inductively coupled plasma. The experiments were performed by comparing the etch rates and selectivity of $Al_2O_3$ over the hard mask materials as functions of the input plasma parameters, such as the gas mixing ratio, DC-bias voltage, ratio-frequency (RF) power and process pressure. The highest obtained etch rate was 477 nm/min at an RF power of 700 W, $O_2$ to $BCl_3$/Ar gas ratio of 15%, DC-bias voltage of -100 V and process pressure of 15 mTorr. The deposition occurred on the surfaces when the amount of $O_2$ added to the $BCl_3$/Ar gas was too high at a low DC-bias voltage or high process pressure. X-ray photoelectron spectroscopy was used to investigate the chemical reactions on the etched surface.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.67-70
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• 2013

In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing $CF_4$ content from 0 to 20 % in $CF_4$/Ar plasma. The TiN etch rate reached maximum at 20% $CF_4$ addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in $CF_4$/Ar plasma.

• Journal of the Korean institute of surface engineering
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• v.46 no.1
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• pp.29-35
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• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

• The Transactions of the Korean Institute of Power Electronics
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• v.13 no.6
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• pp.461-468
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• 2008

This paper presents a novel series connected DC/DC converter and a proper variable phase shift switching method in order to obtain high voltage ratio for fuel cell system. The proposed series connected DC/DC converter has same rectifier and LC filter for DC output voltage, so it can reduce the number of passive devices regardless of the converter number. In the conventional constant phase shift switching method, the proposed series connected DC converters have inverse bias output voltage. In order to overcome this problem, a simple but proper variable phase shift switching method is proposed in the a novel series connected DC/DC converter. In order to verify the proposed system, simulation and experiments are implemented.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.879-880
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• 2008

At the high speed operation, the boost negative bias can reduce the negative torque and increase the dwell angle, so the output power and efficiency can be improved. In this paper, a novel power converter for single phase SRM with boost negative bias is proposed. A simple passive capacitor circuit is added in the front-end, which consists of three diodes and one capacitor. Based on this passive capacitor network, the two capacitors can be connected in series and parallel in different condition. In proposed converter, the phase winding of SRM obtains general dc-link voltage in excitation mode and the double dc-link voltage in demagnetization mode. The operation modes of the proposed converter are analyzed in detail. Some computer simulation and experimental results are done to verify the performance of proposed converter.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.83-88
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• 2003

The reset operation of a CCD image sensor was improved using charge trapping of a MOS structure to realize a loe voltage driving. A DC bias generating circuit was added to the reset structure which sets reference voltage and holds the signal charge to be detected. The generated DC bias is added to the reset pulse to give an optimized voltage margin to the reset operation, and is controlled by adjustment of the threshold voltage of a MOS transistor in the circuit. By the pulse-type stress voltage applied to the gate, the electrons and holes were injected to the gate dielectrics, and the threshold voltage could be adjusted ranging from 0.2V to 5.5V, which is suitable for controlling the incomplete reset operation due to the process variation. The charges trapped in the silicon nitride lead to the positive and negative shift of the threshold voltage, and this phenomenon is explained by Poole-Frenkel conduction and Fowler-Nordheim conduction. A CCD image sensor with $492(H){\;}{\times}{\;}510(V)$ pixels adopting this structure showed complete reset operation with the driving voltage of 3.0V. The resolution chart taken with the image sensor shows no image flow to the illumination of 30 lux, even in the driving voltage of 3.0V.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.3
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• pp.439-444
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• 2016

The method for extracting the SPICE model parameter of Schottky diode under DC forward bias is proposed. A method for improving the accuracy of the SPICE model parameter at various temperatures is proposed. Three analysis steps according to the magnitude of the current is used in order to extract the parameters effectively. At each analysis step, initial parameters are calculated by using the current-voltage equations and the Levenberg-Marquardt analysis is proceeded. To verify the validity of the proposed method, the SPICE model parameters for the BAT45 and FSV1045 under DC forward bias is extracted. Schottky diode currents obtained from the proposed method shows the average relative error of 6.1% and 9% compared with the measured data for the BAT45 and FSV1045 sample at various temperatures.