• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.55-58
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• 1996

A new type CuN/Cu/CuN thin film electrode material with high adhesion to glass was developed by the dc reactive planar magnetron sputtering system for the PDP(Plasma Display Panel). The adhesive force of the CuxN thin film was in the range of 20∼40(N) under the conditions of the N$_2$ partial pressure of 15%, discharge current of 70mA, discharge voltage of 450v and substrate bias voltage of -100V. The adhesive force was depended on the N$_2$ partial Pressure, discharge current and substrate bias voltage.

• 센서학회지
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• 제18권4호
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• pp.280-285
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• 2009

In this paper, we designed a 2-stage CMOS operational amplifier with temperature compensation function using 2-poly 4-metal 0.35 $\mu$m standard CMOS technology. Using two bias circuits, the positive temperature coefficient(PTC) and the negative temperature coefficient(NTC) of the bias circuit are canceled out each other. When reference current circuit is simulated that it has a temperature coefficient of -150 ppm/$^{\circ}C$ with a temperature change from 0 $^{\circ}C$ to 120 $^{\circ}C$. Also the proposed circuit has a temperature coefficient of -0.011 dB/$^{\circ}C$ of DC open loop gain with the same temperature range.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.967_968
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• 2009

For lighting application, high-power LED nowadays is driven at 350mA and a sensing resistor is used to provide feedback for LED-current regulation. This method adds an IR drop at the output branch, and limits power efficiency as LED current is large and keeps increasing. In this paper, a power efficient LED-current sensing circuit is proposed. The circuit does not use any sensing resistor but extracts LED-current information from the output capacitor of the driver. Controlling the brightness of LEDs requires a driver that provides a constant, regulated current. In one case, the converter may need to step down the input voltage, and, in another, it may need to boost up the output voltage. These situations often arise in applications with wide-ranging ""dirty"" input power sources, such as automotive systems. And, the driver topology must be able to generate a large enough output voltage to forward bias the LEDs. So, to provide this requirements, 13W prototype Buck-Boost Converter is used.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2005년도 ICCAS
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• pp.237-240
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• 2005

A novel current mode high Q bandpass filter with electronically tuable values of Q based on second generation current controlled conveyor CCCIIs is presented. The circuit offers the advantages of using a few passive elements. The center frequency and pole-Q can be independently adjusted by via dc bias current of CCCIIs, It is shown from SPICE simulation that the results agree well with theoretical analysis

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.155-159
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• 2000

YBCO step-edge dc SQUID magnetometers on sapphire substrates have been fabricated. CeO2 buffer layer and YBCO films were deposited in situ on the low angle (${\sim}$35$^{\circ}$) steps formed on the sapphire substrates. Typical 5-${\mu}$m-wide junction has R$_n$ of 5 ${\omega}$ and I$_c$ of 50 ${\mu}$A with large I$_c$R$_n$ product of 250 ${\mu}$V at 77K. According to applied bias current, depth of voltage modulation was changed and maximum voltage was measured 16 ${\mu}$V. Field noise of do SQUID was measured 100${\sim}$300 fT/${\surd}^{Hz}$ in the 1 $^{kHz}$, and about 1.5 pT/${\surd}^{Hz}$ in the 1/f region. For ac bias reversal method, field noise was decreased in the 1/f region. The QRS peak of magnetocardiogram was measured 50 pT in the magnetically shielded room.

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.106-109
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• 2011

We investigated the etching characteristics of titanium nitride (TiN) thin film in $BCl_3$/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DC-bias voltage = -100 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to $Al_2O_3$ thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

• Transactions on Electrical and Electronic Materials
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• 제11권4호
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• pp.166-169
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• 2010

In this study, we changed the etch parameters (gas mixing ratio, radio frequency [RF] power, direct current [DC]-bias voltage, and process pressure) and then monitored the effect on the $HfAlO_3$ thin film etch rate and the selectivity with $SiO_2$. A maximum etch rate of 108.7 nm/min was obtained in $Cl_2$ (3 sccm)/$BCl_3$ (4 sccm)/Ar (16 sccm) plasma. The etch selectivity of $HfAlO_3$ to $SiO_2$ reached 1.11. As the RF power and the DC-bias voltage increased, the etch rate of the $HfAlO_3$ thin film increased. As the process pressure increased, the etch rate of the $HfAlO_3$ thin films increased. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. According to the results, the etching of $HfAlO_3$ thin film follows the ion-assisted chemical etching.

• Transactions on Electrical and Electronic Materials
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• 제12권4호
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• pp.144-147
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• 2011

In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a $N_2/BCl_3$/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the $SiO_2$ thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.665-666
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• 2008

Inserted HTS (high temperature superconducting) coil is promisingly expected as a solution for achievement of higher fields such as GHz scale NMR magnet. However, HTS magnet causes persistent current decay in the persistent current mode and this decay should be compensated in order to keep stable magnetic field. As a solution for the decay in the HTS magnets, we proposed a new type superconducting power supply, i.e., linear type magnetic flux pump (LTMFP). The LTMFP mainly consists of DC bias coil, 3-phase AC coil and superconducting Nb foil. The compensating current in closed superconductive circuit can be easily controlled by the intensity of 3-phase AC current and its frequency. In this study, it has been investigated that the flux pump can effectively charge the current for various frequencies according to the different load magnets.

• 전자공학회논문지A
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• 제33A권10호
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• pp.139-143
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• 1996

We report on the static and dynamic characteristics of optically modulated resonant tunneling diode oscillator (RTDO) formed in double-barrier quantum-well structure. Under the illumination of Ti:Sapphire laser, the dc current-voltage (I-V) curves of RTDO shifted towared lower voltages. This characteristic was found to odify the series resistance, negtive differential resistance, capacitance, and the inductance of the RTDO. As a result, the resonant frequency of TRDO centered at 5.302 GHz was found to decrease about 20 MHz under the laser illumination. At a constnat bias voltage, the oscillation frequency decreased linearly as the laser power was increased.