• 한국전자파학회논문지
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• 제18권2호
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• pp.177-182
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• 2007

본 논문은 InGaP/GaAs HBT 공정을 통해 제작한 적응성궤환 잡음제거시스템용 낮은 위상잡음을 갖는 LC 차동 전압제어 발진기를 제안합니다. 전압제어 발진기는 필터링 기술을 포함한 향상된 공진 탱크 구조를 갖습니다. 비대칭 인덕터 대칭 캐패시터 구조로 제안된 전압제어 발진기의 출력 가변 범위는 207 MHz입니다. 출력 전력은 balun과 케이블 손실을 포함하여 -6.68 dBm입니다. 10 kHz, 100 kHz, 1 MHz에서의 위상잡음은 각각 -102.02, -112.04 그리고 -130.4 dBc/Hz입니다. 이 전압제어 발진기는 총 $0.9{\times}0.9mm^2$ 면적 내에 집적화되었습니다.

• 전자공학회논문지D
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• 제34D권5호
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• pp.7-13
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• 1997

A X-band 3-stage monolithic LNA (low noise amplifier) with series feedback has been successfully desined and demonstrated by suign 0.5-$\mu\textrm{m}$ GaAs MESFET. In the design of the 3-stage LNA, the effects of series feedback to the noise figure, the gain, and the stability have been investigated ot find the optimal short stub length. As a result, the inductive series feedback topology which has 10degree short stub in the GaAs MESFET source lead, has been employed in the 1-st stage. The fabricated MMIC LNA's chip size is only 1mm$^{2}$/stage, which is smaller than the previously reported X-band MMIC input/output return losses are less than -10dB and -15dB, respectively. The noise figure (NF) is less than 2.6dB. The measured data show good agreement with the simulated values.

• Journal of electromagnetic engineering and science
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• 제6권1호
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• pp.18-23
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• 2006

In this paper, we demonstrate a fully integrated X-band image rejection down converter, which was developed using InGaP/GaAs HBT MMIC technology, consists of two single-balanced mixers, a differential buffer amplifier, a differential YCO, an LO quadratue generator, a three-stage polyphase filter, and a differential intermediate frequency(IF) amplifier. The X-band image rejection downconverter yields an image rejection ratio of over 25 dB, a conversion gain of over 2.5 dB, and an output-referred 1-dB compression power$(P_{1dB,OUT})$ of - 10 dBm. This downconverter achieves broadband image rejection characteristics over a frequency range of 1.1 GHz with a current consumption of 60 mA from a 3-V supply.

• Archives of Pharmacal Research
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• 제13권2호
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• pp.174-179
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• 1990

Second derivative (D2) spectrometry using ion-pair extraction technique was development for the determination of total glycyrrhetic acid (GA) in Glycyrrhizae Radix, Glycyr-rhizin (G) obtained from Glycyrrhizae Radix was hydrolyzed into GA in 2 N-HCI and methanol (1:1) and extracted from aqueous phase in the form of an ion-pair complex with tetrapentylammonium bromide (TPA) as a counter ion. Maximum D2 amplitude (Z value) was obtained when 1000-fold or greater molar ratio of TPA was used at pH 11. Reaction an effective extraction solvent of the ion-pair complex. The linearity of standard curve of ion-pair GA was obtained in the range of 4.120 $\mu$g/ml as GA. Assayed contents of GA in dry powder by D2 UV spectrometry and HPLC method were 5.31 $\pm$ 0.04% and 5.20 $\pm$ 0.008%, respectively.

• 한국분말재료학회지
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• 제19권4호
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• pp.264-270
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• 2012

In this study, we mainly focus on the study of densification of gas-atomized Cu-50 wt.%In-13 wt.%Ga alloy powder without occurrence of crack during the forming process. Cu-50 wt.%In-13 wt.%Ga alloy powder was consolidated by sintering and rolling processes in order to obtain high density. The phase and microstructure of formed materials were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical microscopy (OM), respectively. Warm rolling using copper can result in the improvement of density. The specimen obtained with 80% of rolling reduction ratio at $140^{\circ}C$ using cooper can have the highest density of $8.039g/cm^3$.

• 한국진공학회지
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• 제15권5호
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• pp.493-498
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• 2006

MOCVD로 성장된 InGaAs 양자점을 이용하여 $1.5{\mu}m$의 발광파장을 갖는 고휘도 발광소자 (Superluminescent diode, SLD)를 제작하였다. 상온에서 SLD의 광출력은 CW 3 mW 였고, 3-dB 파장대역폭은 55 nm 이었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권5호
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• pp.554-562
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• 2015

This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width ($W_{fin}$) and the height of GaN layer ($H_{GaN}$) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/GaN FinFET.

• 대한전기학회논문지:시스템및제어부문D
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• 제53권6호
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• pp.433-439
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• 2004

The Helicopter Simulator System is non-linear and complex. Futhermore, because of absence of its accurate mathematical model, it is difficult to control accurately its attitudes such as elevation angle and azimuth one. Therefore, we proposed a Hybrid GA-PID WAVENET(Genetic Algorithm Proportional Integral Derivative Wavelet Neural Network)control technique to control efficiently these angles. The proposed Hybrid GA-PID WAVENET is made through the following process. First, the WAVENET fundamental functions are defined. And their dilation and translation values are adjusted by GA to construct the optimal WAVENET controller. Secondly, the proportional, integral, and derivative gain coefficients of PR controller are tuned optimally. Finally, WAVENET controller which has a good transient characteristic and GA-PE controller which has a good steady state characteristic is adequately combined in hybrid type. Through the computer simulations, it is proved that the Hybrid GA-PE WAVENET control technique has a more excellent dynamic response than PID control technique and GA-PID one.

• 한국통신학회논문지
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• 제16권11호
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• pp.1071-1083
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• 1991

본 논문에서는 InGaAs APD와 GaAs MESFET를 이용하여 광 수신 전치증폭기의 설계와 제작에 대하여 논의 하였다. 3단 전달 임피던스형 광 수신 전치 증폭기에 대하여 분석하였으며 마이크로스트립을 이용하여 실현 시켰다. 실현된 광수 신전치 증폭기의 성능을 컴퓨터 시뮬레이션에 의하여 예측할 수 있었으며 이론값을 실험한 결과와 비교하였다. 설계 제작한 혼합 마이크로파 집적회로 형태의 광 수신 전치 증폭기는 대역폭이 380MHz이었으며 565Mb/s, $BER10^9$에서 수신기의 감도는 -40.6dBm을 보였다.

• 한국인터넷방송통신학회논문지
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• 제21권3호
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• pp.29-34
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• 2021

소형 레이더 센서에 적용할 목적으로 W-대역의 핵심부품인 전력증폭 MMIC 칩 및 스위치 및 저잡음 증폭 MMIC 통합 칩을 국내설계하고 각각 OMMIC사의 60nm GaN 공정과 Winsemi.사의 0.1㎛ GaAs pHEMT 공정으로 제작하고 이를 모듈화하였다. 국내개발 MMIC 중에서 W-대역 전력증폭 MMIC는 송신모듈로 제작후 출력 값 27.7 dBm로 측정되었고, 스위치와 저잡음증폭 통합 MMIC는 수신모듈로 제작후 잡음지수는 9.17 dB로 분석 결과와 근사한 측정 결과를 보였다. 또한 온도 시험을 통해서 그 결과를 분석하였는데 송신모듈은 고온에서 상온과 출력에서 1.6 dB 편차를 보였고 수신모듈은 고온과 저온 모두 포함하여 2.7 dB의 편차를 보였으나 상온과 비교하여서는 1.4 dB 상승하였다. 온도시험까지를 포함하는 결과를 확인한 바와 같이 소형 레이더 센서의 송수신기에 W-대역 국내 개발 MMIC 칩을 적용 가능할 것으로 판단된다.