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Optical characteristic of 1.5{\mu}m$ InGaAs/InGaAsP/InP QD Superluminescent Diode  

Yoo, Young-Chae (Nano Device Research Center, Korea Institute of Science and Technology, Department of Electronic and Electrical Engineering, SungKyunKwan University)
Lee, Jung-Il (Nano Device Research Center, Korea Institute of Science and Technology)
Kim, Kyoung-Chan (Nano Device Research Center, Korea Institute of Science and Technology)
Kim, Eun-Kyu (Department of Physics, Hanyang University)
Kim, Gil-Ho (Department of Electronic and Electrical Engineering, SungKyunKwan University)
Han, Il-Ki (Nano Device Research Center, Korea Institute of Science and Technology)
Publication Information
Journal of the Korean Vacuum Society / v.15, no.5, 2006 , pp. 493-498 More about this Journal
Abstract
Superluminescent diodes (SLD) with the emitting wavelength of $1.55{\mu}m$ was fabricated on InGaAs quantum dot structure grown by MOCVD. The output power and 3-dB bandwidth at room temperature and continuous wave operation were 3 mw and 55 nm, respectively.
Keywords
InGaAs/InGaAsP/InP QD; Photoluminescence; Electroluminescence; Superluminescent Diode;
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