• Journal of the Chungcheong Mathematical Society
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• v.11 no.1
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• pp.115-121
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• 1998

The purpose of this paper is to prove the following result: Let A be a noncom mutative Banach algebra. Suppose that there exist continuous linear Jordan derivations $D:A{\rightarrow}A$, $G:A{\rightarrow}A$ such that [$D^2(x)+G(x)$, $x^n$] lies in the Jacobson radical of A for all $x{\in}A$. Then $D(A){\subset}rad(A)$ and $G(A){\subset}rad(A)$.

• Journal of the Korean Ceramic Society
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• v.42 no.3 s.274
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• pp.211-217
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• 2005

[ $Zn_{1-x}Co_{x}O$ (x=0-0.3) films were grown on Corning 7059 glasses by asymmetrical bipolar pulsed dc magnetron sputtering. The c-axis orientation along (002) plane was enhanced with increasing Co concentration. The $Zn_{1-x}Co_{x}O$ films are grown with fibrous grains of tight dome shape. The transmittance spectra measured from UV-visible showed that sp-d exchange interactions and typical d-d transitions become activated with increasing Co concentration. The electrical resistivity of $Zn_{1-x}Co_{x}O$ films increased with increasing Co concentration, especially it increased greatly at $30at\% Co. X-ray photoelectron spectroscopy and alternating gradient magnetometer analyses indicated that no Co metal cluster is formed and the ferromagnetic properties are exhibited. The low electrical resistivity and room temperature ferromagnetism of $Zn_{1-x}Co_{x}O$ thin films suggested the possibility of the application to Diluted Magnetic Semiconductors (DMSs).

• Bulletin of the Korean Mathematical Society
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• v.37 no.4
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• pp.803-810
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• 2000

Let N($d_1,...,{\;}d_n;c_1,...,{\;}c_n$) be the number of solutions $(x_1,...,{\;}x_n){\in}F^{n}_p$ of the diagonal equation $c_lx_1^{d_1}+c_2x_2^{d_2}+{\cdots}+c_nx_n^{d_n}{\;}={\;}0{\;}n{\geq},{\;}c_j{\;}{\in}{\;}F^{*}_q,{\;}j=1,2,...,{\;}n$ where $d_j{\;}>{\;}1{\;}and{\;}d_j{\;}$\mid${\;}q{\;}-{\;}1$ for all j = 1,2,..., n. In this paper, we find all n-tuples ($d_1,...,{\;}d_n$) such that the reduced form of ($d_1,...,{\;}d_n$) and N($d_1,...,{\;}d_n;c_1,...,{\;}c_n$) are the same as in the theorem obtained by Sun Qi [3]. Improving this, we also get an explicit formula for the number of solutions of the diagonal equation, unver a certain natural restriction on the exponents.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.7
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• pp.1089-1094
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• 2002

We can travel every imaginary world and do every impossible thing via 3D character. People interest in 3D character animation for modeling like real world due to the increase of 3D game and imaginary Virtual Reality on the internet. In this paper, new framework for present of 3D character of high quality is applied. I represent 3-dimensional Humanoid modeling and animation technology and show the adequacy via simulation for various and natural representation certificate using VRML as a Web3D information type and XML.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.11
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• pp.2573-2584
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• 1997

In this paper, Ca, Sn substitute YIC(Yttrium Iron Garnet) ceramics were fabricated with Al substitutions in Fe sites. The strip-line circulator was designed and the properties of fabricated ciculator were measured. When the electric, magnetic and microwave properties were measured in Ca, Sn substituted YIG with Al subsititions, the relative permittivity and perfmeability in microwave frequencies were 15.623 and 0.972, repectively. For $Y_{2.4}Ca_{0.3}Sn_{0.3}Fe_{5-x}Al_xO_{12}$ garnet ceramics sintered at $1450^{\circ}C$, the ferrimagnetic resonance line width $\Delta{H}$) of 42 Oe and the saturation magnetization of 487 G were measured at 10 GHz. The strip-line circulator was simulated with 3-D FEM(Finite Element Method) software and designed to have insertion loss of 0.8dB, return loss of 25dB, isolation of 35dB at the center frequency of 1.9GHz. The fabricated strition loss of 0.8B, reture loss of 25dB, isolation of 35dB at the center frequency of 1.9GHz. The fabricated strip-line junction circulator using above YIG ceramics had insertion loss of 0.869dB, return loss of 26.955dB, isolation of 44.409dB at the center frequency of 1.9GHz.

• Journal of Soil and Groundwater Environment
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• v.11 no.4
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• pp.33-40
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• 2006

Residual pesticides discharged from diffuse sources at agricultural area in association with suspended solid will be settled at downstream, and may degrade surface water quality. This research studied dechlorination kinetic of atrazine, one of triazine-category herbicide, using zero-valent iron (ZVI) in sediment. It can be observed from the experiments that buffer capacity of sediment helped pH maintained beutral, resulted in continuous dechlorination. Sediments were spiked with atrazine at 10, 30, and 50 mg atrazine/L of total sediment for batch experiments. Dechlorination constants were $1.38x10^{-1}/d$ for the initial concentration of 10 mg/L, $1.29x10^{-l}/d$ for 30 mg/L, and $7.43x10^{-2}/d$ for 50 mg/L while dechlorination constants of initial concentration of 50 mg/L without ZVI adding were estimated as $3.05x10^{-2}/d. Half lifes atrazine by ZVI were estimated as 5.03 d fur 10 mg/L, 5.38 d for 30 mg/L, and 9.33 d for 50 mg/L, respectively.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.353-355
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• 1988

The properites of Zn-diffusion in III-V ternary alloy semiconductor $In_{1-x}Ga_{x}p$, which was grown by the temperature gradient solution (TGS) method, have been investigated. The composition, x, dependence of the Zn-diffusion coefficient at $850^{\circ}C$ and the activation energy for Zn-diffusion into $In_{1-x}Ga_{x}p$ were found to be $D850^{\circ}C$(x)= $3.935{\times}10^{-8}exp(-6.84{\cdot}x)$, and $E_{A}(x)=1,28+2,38{\cdot}x$, respectively. From this study, we confirm that the Zn-diffusion in $In_{1-x}Ga_{x}p$ was explainable with the diffusion mechanisms of the interstitial-substitutional, which was widely accepted mechanisms in the III-V binary semiconductors.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.2
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• pp.172-182
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• 2014

In this paper, is is presented the result of design and fabrication for X band T/R module using in active array radar. The high power RF circuit was fabricated using GaN element, so that high power and high efficiency was fulfilled comparing with the previous T/R module that have under 50 W output power for X band. Designed X band T/R module demonstrated 200 W(53 dBm) peak power, 20 us pulse width with 0.4 dB pulse droop and 20 % duty cycle. And it has characteristics of 26 dB receive gain and 4.5 dB noise figure. The structure was applied to prevent serious damage of receive path and GaN HPA by transmitting power during trasmit time of a pulse radar.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.5
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• pp.943-948
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• 2018

In this paper, SSPA Module for X-band radar was designed and fabricated by using GaN MMIC. For the purpose of configuring the high power SSPA module, the drive steamers are composed of 2-layers of GaN MMIC with considering Gain Loss. In addition, the power divider and power combiner used a 4way approach by designing a 4-stage power amplifier. The power divider has a loss of -3.0dB or more, and the I/O has a loss of -0.2dB in the power combiner and the phase difference between the ports are good at $2^{\circ}$ on average. The fabricated SSPA module got the measurement results that satisfy a Gain 48dB, P(sat)=88.3W(49.46 dBm), PAE=30.3% or more efficiency in condition of frequency range 9~10GHz. The fabricated X-Band SSPA module can be applied in RF performance improvement for SSPA module whit improvement of power divider/combiner.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.168-171
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• 1988

The p-n homo junction diode of the III-V ternary alloy semiconductor $In_{1-x}Ga_xP$ : S grown by the temperature gradient solution (TGS) was fabricated by Zn-diffusion, and it's characteristics was investigated. The carrier concentration of $In_{1-x}Ga_xP$ doped with sulfur, 0.5 mol %, was $1{\times}10^{17}cm^{-3}$ and the mobility was varied with the composition. In the case that the diffusion time was constant as 30 minutes. The temperature dependence of diffusion coefficient was decreased from D= $4.2{\times}10^{-5}$ exp (-1.74/$k_{B}T$) to D= $2.5{\times}10^{-5}$ exp (-3.272/$k_{B}T$) with increasing of composition $\times$ from 0.43 to 0.98. The major peak of E.L spectrum was due to D-A pair recombination and the peak intensity was increased with the increasing of input current. And the E.L intensity was decreased with the increasing temperature, and shift to the long wavelength. The luminescence efficiencies measured at $5^{\circ}C$, atmosphere temperature, was decreased from $2.6{\times}10^{-4}$% to $9.49{\times}10^{-6}$ % with increasing of composition it from 0.39, direct transition region, to 0.98, indirect transition region.