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http://dx.doi.org/10.5515/KJKIEES.2014.25.2.172

Design and Fabrication of X-Band GaN TRM for a Radar  

Lim, Jae-Hwan (LIGNex1)
Jin, Hyung-Suk (LIGNex1)
Ryu, Seong-Hyun (LIGNex1)
Park, Jong-Sun (U-TEL)
Kim, Tae-Hun (U-TEL)
Lim, Duck-Hee (Defense Acquisition Program Administration)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.25, no.2, 2014 , pp. 172-182 More about this Journal
Abstract
In this paper, is is presented the result of design and fabrication for X band T/R module using in active array radar. The high power RF circuit was fabricated using GaN element, so that high power and high efficiency was fulfilled comparing with the previous T/R module that have under 50 W output power for X band. Designed X band T/R module demonstrated 200 W(53 dBm) peak power, 20 us pulse width with 0.4 dB pulse droop and 20 % duty cycle. And it has characteristics of 26 dB receive gain and 4.5 dB noise figure. The structure was applied to prevent serious damage of receive path and GaN HPA by transmitting power during trasmit time of a pulse radar.
Keywords
T/R Module; GaN; Active Array Radar;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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