• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.2
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• pp.237-246
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• 1999

A miniaturized waveguide bandpass filter is designed by combining a corrugated lowpass structure and a highpass configuration based on the cut-off effect of waveguides. It is smaller than the conventional waveguide bandpass filter composed of half-wavelength resonators and has wider spurious free characteristics. Optimized design data for a seven-order waveguide bandpass filter with the symmetrical structure are given at the center frequency of 10 GHz with 800 MHz bandwidth. Measured bandwidth of the center frequency of 9.97 GHz is 840 MHz and measured insertion loss is 0.97dB, The length of the bandpass filter is 64.38mm. The first spurious response is produced at 26.1 GHz.

• Journal of the Korean Society for Railway
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• v.13 no.6
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• pp.559-564
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• 2010

This paper proposes an advanced filter design to improve power quality of a head electric power (HEP) as a power conversion unit in centralized-power type electric railway vehicle. First of all, we have measured waveform of output power of transformer connected HEP to design the filter. Throughout experiment and simulation results, it is estimated that switching technique used HEP is advanced selected harmonic elimination PWM (SHEPWM) and the applied switching frequency is about 300Hz. In this paper, a filter to improve power quality considering estimated parameters is designed. As a result, the reduction of the magnitude of the overall harmonic is achieved and confirmed through simulations.

• ETRI Journal
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• v.27 no.6
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• pp.685-690
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• 2005

DC and RF characteristics of $0.15{\mu}m$ GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The $0.15{\mu}m{\times}100{\mu}m$ MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of -0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4-inch wafer were 8.3% and 5.1%, respectively. The obtained cut-off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The $8{\times}50{\mu}m$ MHEMT device shows 33.2% power-added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications.

• ETRI Journal
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• v.31 no.6
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• pp.749-754
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• 2009

The design and performance of an InGaAs/InP transimpedance amplifier and post amplifier for 40 Gb/s receiver applications are presented. We fabricated the 40 Gb/s transimpedance amplifier and post amplifier using InGaAs/InP heterojunction bipolar transistor (HBT) technology. The developed InGaAs/InP HBTs show a cut-off frequency ($f_T$) of 129 GHz and a maximum oscillation frequency ($f_{max}$) of 175 GHz. The developed transimpedance amplifier provides a bandwidth of 33.5 GHz and a gain of 40.1 $dB{\Omega}$. A 40 Gb/s data clean eye with 146 mV amplitude of the transimpedance amplifier module is achieved. The fabricated post amplifier demonstrates a very wide bandwidth of 36 GHz and a gain of 20.2 dB. The post-amplifier module was fabricated using a Teflon PCB substrate and shows a good eye opening and an output voltage swing above 520 mV.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.553-554
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• 2006

In this paper, 77 GHz CPW power amplifier MMIC, which are consisted of a 2 stage driver stage and a power stage employing $8{\times}50um$ gate width, have been successfully developed by using 120nm $In_{0.4}AlAs/In_{0.35}GaAs$ Metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance $g_m$ of 660 mS/mm, a maximum drain current of 700 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency ($f_T$) of 172 GHz and a maximum oscillation frequency ($f_{max}$) of over 300 GHz are achieved. The fabricated PA exhibited high power gain of 20dB only with 3 stages. The output power is measured to be 12.5 dBm.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.85-90
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• 2002

$RuO_2$/GaN and related contacts were investigated for Schottky contacts in GaN-Based optical and electronic devices. We demonstrated that an $RuO_2$ film forms a stable Schottky contact on a GaN layer with a barrier height (${\Phi}_B$) of 1.46 eV and transmittance of 70% in the visible and near UV region. $RuO_2$/GaN Schottky diode showed a breakdown at over -50V and leakage current of only 0.3 nA at -5V. The $RuO_2$/GaN Schottky type photodetector had the UV/Visible rejection ratio of over $10^5$ and the responsivity of 0.23 A/W at 330 nm. The $RuO_2$ gate AlGaN/GaN EFET exhibited high drain current ($I_d$) of 689.3 mA/mm and high transconductance ($g_m$) of 197.4 mS/mm. Cut-Off frequency ($f_t$) and maximum operating frequency ($f_{max}$) were measured as 27.0 GHz and 45.5 GHz, respectively.

• Journal of the Korean Society for Precision Engineering
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• v.33 no.8
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• pp.617-622
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• 2016

The article describes the determination of the dynamic stability for an observation antenna, considering the rotational speed by the payload driving motor. A finite element model of the observation antenna was made using the solid and beam elements. The connecting parts between the solid and the beam was adequately coupled. The boundary conditions were made by restriction of the degree of freedoms in the supporting points. With the comparison between the modal analysis results and the rotating speed of the payload driving motor, no resonance for the structure of antenna was identified and first natural frequency was determined under 33 Hz (Seismic Cut-Off Frequency). Therefore, the dynamic stability of the antenna was confirmed by the comparism between the seismic safety criterion and the stress results of the dynamic analysis applied the loading conditions and required response spectrum (RRS).

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.5
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• pp.911-916
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• 2018

Among the various microwaves, the microwaves that we are using in our life are the things that combined with the information on what we need with various technologies. However, the signals that we do not want to get as an information is just noise. Therefore, we need to collect only the necessary information, and other information needs to be blocked. This technology is called Jamming. In this paper, the Partial-Band Jamming System through the Helical Antenna about target 95.1 and 97.3MHz in 88Mhz to 108MHz of the FM radio frequency band was studied.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.277-280
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• 2005

This paper dealt with the development of a surge protection device (SPD) that can protect high speed computer network devices from overvoltages caused by switching operations or lightning surges. The designed SPD is a form of hybrid circuit which is composed of a gas tube having large current diverting capability, high response bi-directional avalanche diodes, and fast recovery diodes to reduce insertion loss on high frequency domain. Surge protection and signal transmission characteristics of the fabricated SPD was tested according to the international standards, IEC 61000-4-5 and IEC 61643-21. From the test results, the SPD is satisfied with the international standards and the high cut-off frequency was 204MHz. Also, the SPD showed a good performance without an insertion loss on a field test of 100Mbps class Local Area Network

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.6
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• pp.491-495
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• 2007

This paper has demonstrated the electrical properties of SiGe pMOSFETs fabricated on both bulk-Si and PD SOI substrates. Two principal merits, the mobility increase in strained-SiGe channel and the parasitic capacitance reduction of SOI isolation, resulted in improvements in device performance. It was observed that the SiGe PD SOI could alleviate the floating body effect, and consequently DIBL was as low as 10 mV/V. The cut-off frequency of device fabricated on PD SOI substrate was roughly doubled in comparison with SiGe bulk: from 6.7 GHz to 11.3 GHz. These experimental result suggests that the SiGe PD SOI pMOSFET is a promising option to drive CMOS to enhance performance with its increased operation frequency for high speed and low noise applications.