• Pediatric Gastroenterology, Hepatology & Nutrition
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• v.21 no.1
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• pp.59-67
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• 2018

Purpose: to compare cut off points corrected for age and gender (COOP) with fixed cut off points (FCOP) for fasting plasma insulin and Homeostatic model assessment-insulin resistance (HOMA-IR) for the diagnosis of IR in obese children and adolescents and their correlation with dyslipidemia. Methods: A multicenter, cross-sectional study including 383 subjects aged 7 to 18 years, evaluating fasting blood glucose, plasma insulin, and lipid profile. Subjects with high insulin levels and/or HOMA-IR were considered as having IR, based on two defining criteria: FCOP or CCOP. The frequency of metabolic abnormalities, the presence of IR, and the presence of dyslipidemia in relation to FCOP or CCOP were analyzed using Fisher and Mann-Whitney exact tests. Results: Using HOMA-IR, IR was diagnosed in 155 (40.5%) and 215 (56.1%) patients and, using fasting insulin, 150 (39.2%) and 221 (57.7%), respectively applying FCOP and CCOP. The use of CCOP resulted in lower insulin and HOMA-IR values than FCOP. Dyslipidemia was not related to FCOP or CCOP. Blood glucose remained within normal limits in all patients with IR. There was no difference in the frequency of IR identified by plasma insulin or HOMA-IR, both for FCOP and CCOP. Conclusion: The CCOP of plasma insulin or of HOMA-IR detected more cases of IR as compared to the FCOP, but were not associated with the frequency of dyslipidemia. As blood glucose has almost no fluctuation in this age group, even in the presence of IR, fasting plasma insulin detected the same cases of IR that would be detected by HOMA-IR.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.1
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• pp.66-77
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• 2010

Improvement in breakdown voltage ($BV_{ds}$) and speed of the device are the key issues among the researchers for enhancing the performance of HEMT. Increased speed of the device aspires for shortened gate length ($L_g$), but due to lithographic limitation, shortening $L_g$ below sub-micrometer requires the inclusion of various metal-insulator geometries like T-gate onto the conventional architecture. It has been observed that the speed of the device can be enhanced by minimizing the effect of upper gate electrode on device characteristics, whereas increase in the $BV_{ds}$ of the device can be achieved by considering the finite effect of the upper gate electrode. Further, improvement in $BV_{ds}$ can be obtained by applying field plates, especially at the drain side. The important parameters affecting $BV_{ds}$ and cut-off frequency ($f_T$) of the device are the length, thickness, position and shape of metal-insulator geometry. In this context, intensive simulation work with analytical analysis has been carried out to study the effect of variation in length, thickness and position of the insulator under the gate for various metal-insulator gate geometries like T-gate, $\Gamma$-gate, Step-gate etc., to anticipate superior device performance in conventional HEMT structure.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.637-641
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• 2006

We present the DC and RF characteristics of 100 nm gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MHEMTs). We fabricated the T-gate with 100 nm foot print by using a positive resist ZEP520/P (MMA-MAA)/PMMA trilayer by double exposure method. The fabricated 100 nm MHEMT with a $70\;{\mu}m$ unit gate width and two fingers were characterized through do and rf measurements. The maximum drain current density of 465 mA/mm and extrinsic transconductance $(g_m)$ of 844 mS/mm were obtained with our devices. From rf measurements, we obtained the current gain cut-off frequency $(f_T)$ of 192 GHz, and maximum oscillation frequency $(f_{max})$ 310 GHz.

• Journal of the Korea Institute of Military Science and Technology
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• v.26 no.3
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• pp.262-272
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• 2023

A polymer-based mechanical low-pass filter(m-LPF) for high-g accelerometers makes it possible to remove high-frequency transient noises from acceleration signals, thus ensuring repeatable and reliable measurement on high-g acceleration. We establish a prediction model for performance of m-LPF by combining a fundamental vibration model with the fractional derivative standard linear solid(FD SLS) model describing the storage modulus and loss modulus of polymers. Here, the FD SLS model is modified to consider the effect of m-LPF shape factor (i.e., thickness) on storage modulus and loss modulus. The prediction accuracy is verified by comparing the displacement transmissibility(or cut-off frequency) estimated using our model with that measured from 3 kinds of polymers(polysulfide rubber(PSR), silicone rubber(SR), and polydimethylsiloxane(PDMS)). Our findings will contribute a significant growth of m-LPF for high-g accelerometers.

• The Journal of the Acoustical Society of Korea
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• v.25 no.3
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• pp.107-112
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• 2006

The elastic waves in a plate are dispersive waves due to the characteristics of Lamb waves. However, S0 symmetric mode is less dispersive in the frequency region below the first cut-off frequency. The wave Propagation velocities vary with the direction in anisotropic plates such as Carbon Fiber Reinforced Plastic (CFRP) Plates. The wave vector direction and energy flow vector direction are same in isotropic plates. However, the wave vector direction same as the phase velocity direction is not in accordance with the energy flow direction same as the group velocity direction in anisotropic plates. In this study. the dispersion curves or the phase velocity from anti-symmetric and symmetric Lamb wave dispersion equation are calculated for unidirectional laminated composite plate. Slowness surface is sketched using phase velocity under the first cut-off frequency. The direction and magnitude of group velocity are corrected with this slowness surface. The measured group velocities are in good agreement with the corrected group velocity curve except near the fiber direction zone which is called the cusp region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.550-553
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• 2001

In this study, unity current gain frequency f$\_$T/ of GaAs MESFET is predicted with different temperatures up to 400 $^{\circ}C$. Temperature dependence parameters of the device including intrinsic carrier concentration n$\_$i/ effective mass, depletion width are considered to be temperature dependent. Small signal parameters such as gate-source, gate dran capacitances C$\_$gs/ C$\_$gd/ are correlated with transconductance g$\_$m/ to predict the unity current gain frequency. The extrinsic capacitance which plays an important roles in high frequency region has been taken into consideration in evaluating total capacitance by using elliptic integral through the substrate. From the results, f$\_$T/ decreases as the temperature increases due to the increase of small signal capacitances and the mobility degradation. Finally the extrinsic elements of capacitances have been proved to be critical in deciding f$\_$T/ which are originated from the design rule of the device.

• Journal of the Korean Ceramic Society
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• v.29 no.8
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• pp.639-645
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• 1992

Effects of additives on electromagnetic properties of a Ni-Cu-Zn ferrite for a noise filter in high frequency regions were studied. Both resistivity and permeability were increased with the amount of Mn2O3 up to 1wt%, then decreased with further addition. Addition of Co2O3 decreased the permeability of the ferrite and shifted the resonance frequency to a higher frequency region, which was thought due to the stabilization of domain walls. Therefore it was possible to improve both the permeability and the loss and to control the cut-off frequency by the concurrent addition of Mn2O3 and Co2O3.

• Korean Journal of Applied Biomechanics
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• v.26 no.4
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• pp.333-341
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• 2016

Objective: The purpose of this study was to assess the consistency of the gliding and push-off motion for single leg skating from the first to fourteenth steps. We hypothesized that: 1) there would be no difference in stroke trajectory, step rate, and cycle rate between the left and right steps of gliding; and 2) there would be a difference in the resultant velocity of toe push-off and the horizontal velocity of the center of mass after six step push-offs. Method: The study included five male 500-m speed skaters (mean height, $1.80{\pm}0.02m$; mean weight, $76.8{\pm}3.96kg$; record, $35.83{\pm}0.30sec$; 100-m record, <9.97 sec). Data were collected from the first to fourteenth steps (40 m) and recorded using five digital JVC GR-HD1KR video cameras (Victor Co., Japan) operating at a sampling frequency of 60 fields/sec and shutter speed of 1/500 sec. For each film frame, the joint positions were digitized using the KWON3D motion analyzer. Position data were filtered with low-pass Butterworth $4^{th}$ order at the cut-off frequency of 7.4 Hz. Results: The right toe of the skating trajectories at $2^{nd}$, $5^{th}$, and $7^{th}$ strokes differed from those of the left toe. The angles of the right and left knee demonstrated unbalanced patterns from the flexion and extension legs. The step and cycle rates of the right and left leg differed from the start until 20 m. The resultant velocities of the toe at the push-off phase and of the body mass center diverged before the six push-offs. Conclusion: This study's findings indicate that the toe of skating trajectory on left and right sliding after push-off should maintain a symmetrical trajectory. The resultant velocity of toe push-off and horizontal velocity from the center of body need to be separated after about six step push-offs.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.205-205
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• 2013

테라헤르쯔(terahertz: THz)파는 0.1~10 THz 의 범위로 적외선과 방송파 사이에 광대역 주파수 스펙트럼을 차지하고 있으며 직진성, 투과성, 그리고 낮은 에너지 (meV)를 가지고 있어 비 파괴적이고 무해한 장점을 지니고 있다. Ti:sapphire laser와 같은 femto-pulse source 등이 많은 발전이 되어 현재 많은 연구와 발전이 이루어지고 있다. femto-pulse source를 이용한 THz 응용에서는 높은 저항, 큰 전자 이동도, 그리고 아주 짧은 전하수명의 기판을 요구하는데 저온에서 성장한 (low-temperature grown : LT) GaAs는 격자 내에 Gallium 자리에 Arsenic이 치환 하면서 AsGa antisite가 발생하여 전하수명을 짧아지는 것을 응용하여 가장 많이 이용되고 있다. 현재 THz 응용분야에서 보다 작고 가격경쟁력이 있는 광통신을 이용한 THz photomixer등이 활발히 연구 하고 있다. 광섬유 내에서 손실과 분산이 최소값을 가지는 부분이 1.55 ${\mu}m$ 부근이고 In0.53Ga0.47As 기판을 이용하였을 때 여기에 완벽하게 만족하게 된다. 하지만 LT-InGaAs 의 경우 AsGa antisite로 인하여 carrier lifetime은 짧아지지만 높은 n-type 전하밀도를 가지게 된다. 이때 Be을 doping하여 전하밀도를 보상하여 높은 저항을 유지해야 하는데 Be의 활성화를 위해서는 열처리를 필요로 한다. 하지만 열처리를 하면 carrier lifetime이 길어지기 때문에 carrier lifetime과 저항을 적절히 조율해야 한다. 이는 물질자체의 특성이기 때문에 InGaAs는 GaAs보다 낮은 amplitude와 짧은 cut-off frequency를 가진다. 본 연구에서는 보다 높은 저항을 얻기 위하여 molecular beam epitaxy를 이용하여 semi-insulating InP:Fe 기판위에 격자 정합된 InGaAs:Be/InAlAs multi quantum well (MQW)를 온도별 ($250{\sim}400^{\circ}C$), 주기별 (50~150)로 성장을 하였고 이때 InGaAs layer의 Be doping level은 $2{\times}1018\;cm^{-3}$, Ex-situ annealing은 $550^{\circ}C$에서 10분으로 고정 하였다. THz 발생 실험에서는 InGaAs/InAlAs MQW은 4000 pA로 1,000 pA를 가지는 InGaAs epilayer보다 4배 높은 전류 신호를 얻을 수 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. THz 검출 실험에서는 LT-InGaAs:Be epilayer LT-InGaAs:Be/InAlAs, HT-InGaAs/InAlAs 샘플이 각각 180, 9000, 12000 pA의 전류신호를 가지고 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. HT-InGaAs/InAlAs MQW를 이용한 검출실험에서는 InGaAs layer가 defect free이지만 LT-InGaAs:Be/ InAlAs MQW 보다 높은 전류 신호를 얻을 수 있었다. 이는 InAlAs layer가 저항만 높이는 것뿐만 아니라 carrier trapping layer로써의 역할도 하는 것으로 사료된다.

• Asian Pacific Journal of Cancer Prevention
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• v.13 no.11
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• pp.5695-5699
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• 2012

We investigated the relationships between demographics, lifestyle characteristics, and serum total prostate specific antigen (PSA) concentration and examined the population-based distribution of total PSA by age among 2,246 Korean men with a median age of 45 years. We obtained data about demographic and lifestyle characteristics based on self-reporting using a quetionnaire. We also performed physical examinations, anthropometric measurements, and biochemical measurements. The PSA concentration increased with age and there was a significant difference in total PSA concentration between the age groups of 21-60 years and >60 years. Age >60 years, height ${\geq}1.8$ m, a low frequency of alcohol consumption, and taking nutritional supplements showed a significantly increased odds ratio for increased PSA when 3.0 ng/mL was chosen as the PSA cut-off level. Smoking status, BMI, percent body fat, diabetes mellitus, fatty liver, herbal medicine use, vitamin use, and diet were not significantly associated with total PSA regardless of the cut-off level. When interpreting a single PSA test, height, alcohol consumption, and nutritional supplement use should be considered, in addition to age.