• Title/Summary/Keyword: Current-Mode Circuit

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Performance Improvement of Current-mode Device for Digital Audio Processor (디지털 오디오 프로세서용 전류모드 소자의 성능 개선에 관한 연구)

  • Kim, Seong-Kweon;Cho, Ju-Phil;Cha, Jae-Sang
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.8 no.5
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    • pp.35-41
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    • 2008
  • This paper presents the design method of current-mode signal processing for high speed and low power digital audio signal processing. The digital audio processor requires a digital signal processing such as fast Fourier transform (FFT), which has a problem of large power consumption according to the settled point number and high speed operation. Therefore, a current-mode signal processing with a switched Current (SI) circuit was employed to the digital audio signal processing because a limited battery life should be considered for a low power operation. However, current memory that construct a SI circuit has a problem called clock-feedthrough. In this paper, we examine the connection of dummy MOS that is the common solution of clock-feedthrough and are willing to calculate the relation of width between dummy MOS for a proposal of the design methodology for improvement of current memory. As a result of simulation, in case of that the width of memory MOS is 20um, ratio of input current and bias current is 0.3, the relation of width between switch MOS and dummy MOS is $W_{M4}=1.95W_{M3}+1.2$ for the width of switch MOS is 2~5um, it is $W_{M4}=0.92W_{M3}+6.3$ for the width of switch MOS is 5~10um. Then the defined relation of MOS transistors can be a useful design guidance for a high speed low power digital audio processor.

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Design of temperature sensing circuit measuring the temperature inside of IC (IC내부 온도 측정이 가능한 온도센서회로 설계)

  • Kang, Byung-jun;Kim, Han-seul;Lee, Min-woo;Son, Sang-hee;Jung, Won-sup
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.838-841
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    • 2012
  • To avoid the damage to circuit and performance degradation by temperature changes, temperature sensing circuit applicable to the IC is proposed in this paper. Temperature sensing is executed by PTAT circuit and power saving mode is activated by internal switch if internal temperature is in high. Also, characteristics of current matching are increased by using current mirror and cascode circuits. From the simulation results, this circuit is operating in action mode if input signal is in low. But it immediately goes into power saving mode if output signal is in high. It shows the output voltage of 1V at $75^{\circ}C$ and 1.75V at $125^{\circ}C$ in action mode and near 0 V(0V~ 7uV) in power saving mode.

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Design of a 64×64-Bit Modified Booth Multiplier Using Current-Mode CMOS Quarternary Logic Circuits (전류모드 CMOS 4치 논리회로를 이용한 64×64-비트 변형된 Booth 곱셈기 설계)

  • Kim, Jeong-Beom
    • The KIPS Transactions:PartA
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    • v.14A no.4
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    • pp.203-208
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    • 2007
  • This paper proposes a $64{\times}64$ Modified Booth multiplier using CMOS multi-valued logic circuits. The multiplier based on the radix-4 algorithm is designed with current mode CMOS quaternary logic circuits. Designed multiplier is reduced the transistor count by 64.4% compared with the voltage mode binary multiplier. The multiplier is designed with Samsung $0.35{\mu}m$ standard CMOS process at a 3.3V supply voltage and unit current $5{\mu}m$. The validity and effectiveness are verified through the HSPICE simulation. The voltage mode binary multiplier is achieved the occupied area of $7.5{\times}9.4mm^2$, the maximum propagation delay time of 9.8ns and the average power consumption of 45.2mW. This multiplier is achieved the maximum propagation delay time of 11.9ns and the average power consumption of 49.7mW. The designed multiplier is reduced the occupied area by 42.5% compared with the voltage mode binary multiplier.

Bi-directional current transceiver

  • Songsataya, Kiettiwan;Sungkabunchoo, Tiparat;Riewruja, Vanchai;Chaikla, Amphawan;Julsereewong, Prasit
    • 제어로봇시스템학회:학술대회논문집
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    • 2005.06a
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    • pp.861-863
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    • 2005
  • The current-mode circuit technique to design a bi-directional current transceiver for remote control systems and telemetering systems is presented in this paper. The proposed transceiver can transmit and receive the industrial standard current signal 4-20mA at the same time using two wires connection. The realization method is based on a second generation current conveyor (CCII) and a current mirror, which can be implemented using a commercially available device. To demonstrate the performance of the proposed scheme, the transceiver was simulated by the use of the PSPICE analog simulation program. The simulation results verifying the circuit performance are agreed with the expected values. The crosstalk of the proposed transceiver of about .63dB is observed.

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(The Design of Parallel Ternary-Valued Multiplier Using Current Mode CMOS) (전류모드 CMOS를 사용한 병렬 3치 승산기 설계)

  • Sim, Jae-Hwan;Byeon, Gi-Yeong;Yun, Byeong-Hui;Lee, Sang-Mok;Kim, Heung-Su
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.39 no.2
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    • pp.123-131
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    • 2002
  • In this paper, a new standard basis parallel ternary-valued multiplier circuit designed using current mode CMOS is presented. Prior to constructing the GF(3$^{m}$) multiplier circuit, we provide a GF(3) adder and a GF(3) multiplier with truth tables and symbolize them, and also design them using current mode CMOS circuit. Using the basic ternary operation concept, a ternary adder and a multiplier, we develop the equations to multiply arbitrary two elements over GF(3$^{m}$). Following these equations, we can design a multiplier generalized to GF(3$^{m}$). For the proposed circuit in this paper, we show the example in GF(3$^{3}$). In this paper, we assemble the operation blocks into a complete GF(3$^{m}$) multiplier. Therefore the proposed circuit is easy to generalize for m and advantageous for VLSI. Also, it need no memory element and the latency not less fewer than other circuit. We verify the proposed circuit by functional simulation and show its result.

A Novel 800mV Beta-Multiplier Reference Current Source Circuit for Low-Power Low-Voltage Mixed-Mode Systems (저전압 저전력 혼성신호 시스템 설계를 위한 800mV 기준전류원 회로의 설계)

  • Kwon, Oh-Jun;Woo, Son-Bo;Kim, Kyeong-Rok;Kwack, Kae-Dal
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.585-586
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    • 2008
  • In this paper, a novel beta-multiplier reference current source circuit for the 800mV power-supply voltage is presented. In order to cope with the narrow input common-mode range of the OpAmp in the reference circuit, shunt resistive voltage divider branches were deployed. High gain OpAmp was designed to compensate intrinsic low output resistance of the MOS transistors. The proposed reference circuit was designed in a standard 0.18um CMOS process with nominal Vth of 420mV and -450mV for nMOS and pMOS transistor respectively. The total power consumption including OpAmp is less than 50uW.

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Soft switching high power factor buck converter using loss less snubber circuit (무손실 스너버 회로를 이용한 소프트 스위칭 강압형 고역률 컨버터)

  • 구헌회;변영복;김성철;서기영;이현우
    • Journal of the Korean Institute of Telematics and Electronics S
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    • v.34S no.6
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    • pp.77-84
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    • 1997
  • buck type converter doesn't appear when an input voltag eis lower than an output voltage. This is the main reason the buck converter has not been used for high power factor converters. In this paper, soft switching high power factor buck converter is proposed. This converter is composed of diode rectifier, input capacitor can be small enough to filter input current, buck converter with loss less snubber circuit. Converter is operated in discontinous conduction mode, turn on of the switching device is a zero current switching (ZCS) and high powr factor input is obtianed. In addition, zero voltage switching (ZVS) at trun off is achieved and switching loss is reduced using loss less snubber circuit. The capacitor used in the snubber circuit raised output voltage. Therefore, proposed converter has higher output voltage and higher efficiency than conventional buck type converter at same duty factor in discontinous conduction mode operation. High power factro, efficiency, soft switching operation of proposed converter is veified by simulation using Pspice and experimental results.

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Four Quadrant CMOS Current Differentiated Circuit

  • Parnklang, Jirawath;Manasaprom, Ampaul;Ukritnukul, Anek
    • 제어로봇시스템학회:학술대회논문집
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    • 2003.10a
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    • pp.948-950
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    • 2003
  • In this literature, the CMOS current mode fout quadrant differentiator circuit is proposed. The implementation is base on an appropriate input stage that converts the input current into a compressed voltage at the input capacitor ($C_{gs}$) of the CMOS driver circuit. This input voltage use as the control output current which flow to the output node by passing through a MOS active load and use it as the feedback voltage to the input node. Simulation results with level 49 CMOS model of MOSIS are given to demonstrate the correct operation of the proposed configuration. But the gain of the circuit is too low so the output differentiate current also low. The proposed differentiator is expected to find several applications in analog signal processing system.

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Design of Multivalued Logic Circuits using Current Mode CMOS (전류모드 CMOS에 의한 다치논리회로의 설계)

  • Seong, Hyeon-Kyeong;Kang, Sung-Su;Kim, Heung-Soo
    • Proceedings of the KIEE Conference
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    • 1988.07a
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    • pp.278-281
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    • 1988
  • This paper realizes the multi-output truncated difference circuits using current mode CMOS, and presents the algorithm designing multi - valued logic functions of a given multivalued truth tables. This algorithm divides the discrete valued functions and the interval functions, and transforms them into the truncated difference functions. The transformed functions are realized by current mode CMOS. The technique presented here is applied to MOD4 addition circuit and GF(4) multiplication circuit.

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A Semi-analytical Model for Depletion-mode N-type Nanowire Field-effect Transistor (NWFET) with Top-gate Structure

  • Yu, Yun-Seop
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.2
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    • pp.152-159
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    • 2010
  • We propose a semi-analytical current conduction model for depletion-mode n-type nanowire field-effect transistors (NWFETs) with top-gate structure. The NWFET model is based on an equivalent circuit consisting of two back-to-back Schottky diodes for the metal-semiconductor (MS) contacts and the intrinsic top-gate NWFET. The intrinsic top-gate NWFET model is derived from the current conduction mechanisms due to bulk charges through the center neutral region as well as of accumulation charges through the surface accumulation region, based on the electrostatic method, and thus it includes all current conduction mechanisms of the NWFET operating at various top-gate bias conditions. Our previously developed Schottky diode model is used for the MS contacts. The newly developed model is integrated into ADS, in which the intrinsic part of the NWFET is developed by utilizing the Symbolically Defined Device (SDD) for an equation-based nonlinear model. The results simulated from the newly developed NWFET model reproduce considerably well the reported experimental results.