• Journal of Welding and Joining
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• v.20 no.2
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• pp.77-81
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• 2002

Many kinds of Pb-free solder have been investigated because of the environmental concerns. Sn-Ag-Cu system is well blown as most competitive Pb-free solder. However, since Sn-Ag-Cu system has relatively high melting point compared to Sn-Pb eutectic, it may a limitation, the some application. In this study, Bi and In contained solder of $Sn_3Ag_8Bi_5In$ which has relatively lower melting point, $188~204^{\circ}C$, was investigated. $Sn_3Ag_8Bi_5In$ solder ball of $500\mu\textrm{m}$ diameter was set on the Ni/Cu/Cr-UBM and reflow soldered in the range of $220~240^{\circ}C$ for 5~15s. The maximum shear strength of the solder ball was around 170mN by reflowing at $240^{\circ}C$ for 10s. Intermetallic compound formed on the UBM of Si-wafer was analysed by SEM(scanning electron microscope) and XRD(X-ray diffractometer).

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.184-185
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• 2011

In this study, in order to obtain a high reflectivity for the LED lead frame, tin dip coating and tin plating were conducted respectively, and wettability of LED lead frame with tin solder also was tested by wetting balance tester. A Cu sheet was plated in Cu brighten electroplating bath and followed by immersion in a Sn electro-less plating bath [1]. On the other hand, in the dip coating process, a Cu sheet was dipped into molten tin. In the progress of wetting test, besides wetting balance curve, the maximum measured force($F_m$), the maximum withdrawal force($F_w$) and zero-cross time($t_0$) were obtained in various temperatures. With the maximum withdrawal force, the surface tension was calculated at different temperatures. The Cu sheet plated with bright Cu and Sn show a silver bright property while that of Cu dipped with Sn possessed a high reflectance density of 1.34GAM at $270^{\circ}C$.

• Current Applied Physics
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• v.18 no.12
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• pp.1571-1576
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• 2018

Recent study shows that the main reason for limiting CZTS device performance lies in the low open circuit voltage, and crucial factor that could affect the $V_{oc}$ is secondary phases like ZnS existing in absorber layer and its interfaces. In this work, the $Cu_2ZnSnS_4$ thin film solar cells were prepared by sputtering CuSn and CuZn alloy targets. Through tuning the Zn/Sn ratios of the CZTS thin films, the crystal structure, morphology, chemical composition and phase purity of CZTS thin films were characterized by X-Ray Diffraction (XRD), scanning electron microscopy (SEM) equipped with an energy dispersive spectrometer (EDS) and Raman spectroscopy. The statistics data show that the CZTS solar cell with a ratio of Zn/Sn = 1.2 have the best power convention efficiency of 5.07%. After HCl etching process, the CZTS thin film solar cell with the highest efficiency 5.41% was obtained, which demonstrated that CZTS film solar cells with high efficiency could be developed by sputtering CuSn and CuZn alloy targets.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.231-231
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• 2015

무전해 Ni의 Metal turnover (MTO)가 증가함에 따라, Ni과 Sn-Ag-Cu솔더간 계면 금속간화합물층의 두꺼워지고, Ni-Sn-P층에 형성된 Nano void의 수가 많아지게 되어 취성파괴가 증가한다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.09a
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• pp.147-163
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• 2003

European Union bans the usage of Pb in electronics from July 1 st, 2006. The Near-eutectic Sn-Ag-Cu alloys are the leading candidate Pb-free solders (for SMT card assembly). .The microstructure of Sn-Ag-Cu alloys is discussed in terms of solidification, composition and cooling rate. Methods of controlling Ag3Sn plates are discussed. .Thermo-mechanical fatigue behaviors of Sn-Ag-Cu solder joints are reviewed. Tin pest, whisker growth, electromigration of Pb-free solders are discussed.

• New & Renewable Energy
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• v.3 no.4
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• pp.54-62
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• 2007

In this paper, we report the research highlight on the preparation and characterization of Indium-free $Cu_2ZnSnSe_4$ and Indium-reduced $CulnZnSe_2$ thin films in order to seek the viability of these absorber materials to be applied in thin film solar cells. The films of $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ were prepared using mixed binary chalcogenides powders. It was observed that Cu concentration was a function of substrate temperature as well as CuSe mole ratio in the target. Under an optimized condition, $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ thin films grew with strong [112]. [220/204] and [312/116] reflections. Both $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ films were found to exhibit a high absorption coefficient of $104^4cm^{-1}\;Cu_2ZnSnSe_4$ film showed a band gap of 1.5eV which closes to the optimum band gap of an ideal solar absorber for a solar cell. On the other side, an increase of optical band gap from 1.0 to 1.25eV was found to be proportional with an increase of Zn concentration in the $CulnZnSe_2$ film. All films in this study revealed a p-type semiconductor characteristic.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.71-76
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• 2012

A chip interconnection technology for smart fabrics was investigated by using flip-chip bonding of SnBi low-temperature solder. A fabric substrate with a Cu leadframe could be successfully fabricated with transferring a Cu leadframe from a carrier film to a fabric by hot-pressing at $130^{\circ}C$. A chip specimen with SnBi solder bumps was formed by screen printing of SnBi solder paste and was connected to the Cu leadframe of the fabric substrate by flip-chip bonding at $180^{\circ}C$ for 60 sec. The average contact resistance of the SnBi flip-chip joint of the smart fabric was measured as $9m{\Omega}$.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.74.2-74.2
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• 2000

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.11a
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• pp.49-49
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• 2004

• Proceedings of the KWS Conference
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• 2007.11a
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• pp.222-222
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• 2007