• 한국정보통신학회논문지
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• 제10권9호
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• pp.1641-1647
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• 2006

나노입자 크기를 가진 얇은 $SnO_2$ 박막을 이용하여 CO 및 $H_2S$에 대한 우수한 감도를 가지는 복합 마이크로 가스센서 어레이를 제작하였다. 나노입자의 박막을 만들기 위해서 약 $2500{\AA}$ 두께의 $SnO_2,\;SnO_2(+Pt),\;SnO_2(+CuO)$ 막을 셰도우마스크를 사용하여 형성 한 후, 이를 $600{\sim}800^{\circ}C$의 온도에서 산화하므로서 나노입자의 $SnO_2$ 모물질의 가스감지 박막을 형성하였다. 실리콘 기판의 마이크로센서의 형태로 제작된 $SnO_2(Pt)$ 및 $SnO_2(+CuO)$ 가스센서는 각각 CO 및 $H_2S$ 가스에 대한 매우 우수한 감도를 나타내는 것을 확인하였다.

• Journal of Welding and Joining
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• 제20권2호
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• pp.77-81
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• 2002

Many kinds of Pb-free solder have been investigated because of the environmental concerns. Sn-Ag-Cu system is well blown as most competitive Pb-free solder. However, since Sn-Ag-Cu system has relatively high melting point compared to Sn-Pb eutectic, it may a limitation, the some application. In this study, Bi and In contained solder of $Sn_3Ag_8Bi_5In$ which has relatively lower melting point, $188~204^{\circ}C$, was investigated. $Sn_3Ag_8Bi_5In$ solder ball of $500\mu\textrm{m}$ diameter was set on the Ni/Cu/Cr-UBM and reflow soldered in the range of $220~240^{\circ}C$ for 5~15s. The maximum shear strength of the solder ball was around 170mN by reflowing at $240^{\circ}C$ for 10s. Intermetallic compound formed on the UBM of Si-wafer was analysed by SEM(scanning electron microscope) and XRD(X-ray diffractometer).

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.184-185
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• 2011

In this study, in order to obtain a high reflectivity for the LED lead frame, tin dip coating and tin plating were conducted respectively, and wettability of LED lead frame with tin solder also was tested by wetting balance tester. A Cu sheet was plated in Cu brighten electroplating bath and followed by immersion in a Sn electro-less plating bath [1]. On the other hand, in the dip coating process, a Cu sheet was dipped into molten tin. In the progress of wetting test, besides wetting balance curve, the maximum measured force($F_m$), the maximum withdrawal force($F_w$) and zero-cross time($t_0$) were obtained in various temperatures. With the maximum withdrawal force, the surface tension was calculated at different temperatures. The Cu sheet plated with bright Cu and Sn show a silver bright property while that of Cu dipped with Sn possessed a high reflectance density of 1.34GAM at $270^{\circ}C$.

• Current Applied Physics
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• 제18권12호
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• pp.1571-1576
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• 2018

Recent study shows that the main reason for limiting CZTS device performance lies in the low open circuit voltage, and crucial factor that could affect the $V_{oc}$ is secondary phases like ZnS existing in absorber layer and its interfaces. In this work, the $Cu_2ZnSnS_4$ thin film solar cells were prepared by sputtering CuSn and CuZn alloy targets. Through tuning the Zn/Sn ratios of the CZTS thin films, the crystal structure, morphology, chemical composition and phase purity of CZTS thin films were characterized by X-Ray Diffraction (XRD), scanning electron microscopy (SEM) equipped with an energy dispersive spectrometer (EDS) and Raman spectroscopy. The statistics data show that the CZTS solar cell with a ratio of Zn/Sn = 1.2 have the best power convention efficiency of 5.07%. After HCl etching process, the CZTS thin film solar cell with the highest efficiency 5.41% was obtained, which demonstrated that CZTS film solar cells with high efficiency could be developed by sputtering CuSn and CuZn alloy targets.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 추계학술대회 논문집
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• pp.231-231
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• 2015

무전해 Ni의 Metal turnover (MTO)가 증가함에 따라, Ni과 Sn-Ag-Cu솔더간 계면 금속간화합물층의 두꺼워지고, Ni-Sn-P층에 형성된 Nano void의 수가 많아지게 되어 취성파괴가 증가한다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 International Symposium
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• pp.147-163
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• 2003

European Union bans the usage of Pb in electronics from July 1 st, 2006. The Near-eutectic Sn-Ag-Cu alloys are the leading candidate Pb-free solders (for SMT card assembly). .The microstructure of Sn-Ag-Cu alloys is discussed in terms of solidification, composition and cooling rate. Methods of controlling Ag3Sn plates are discussed. .Thermo-mechanical fatigue behaviors of Sn-Ag-Cu solder joints are reviewed. Tin pest, whisker growth, electromigration of Pb-free solders are discussed.

• 마이크로전자및패키징학회지
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• 제19권3호
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• pp.71-76
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• 2012

SnBi 저온솔더의 플립칩 공정을 이용한 스마트 의류용 칩 접속공정에 대해 연구하였다. 캐리어 필름에 형성한 Cu 리드프레임을 $130^{\circ}C$에서 직물에 열압착 시킴으로써 Cu 리드프레임이 전사된 직물 기판을 형성하였다. 칩 시편에 SnBi 페이스트를 도포하여 솔더범프를 형성한 후 직물 기판의 Cu 리드프레임에 배열하고 $180^{\circ}C$에서 60초 동안 유지시켜 플립칩 본딩하였다. SnBi 저온솔더를 사용하여 형성된 스마트 의류용 플립칩 접속부의 평균 접속저항은 $9m{\Omega}$이었다.

• 신재생에너지
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• 제3권4호
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• pp.54-62
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• 2007

In this paper, we report the research highlight on the preparation and characterization of Indium-free $Cu_2ZnSnSe_4$ and Indium-reduced $CulnZnSe_2$ thin films in order to seek the viability of these absorber materials to be applied in thin film solar cells. The films of $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ were prepared using mixed binary chalcogenides powders. It was observed that Cu concentration was a function of substrate temperature as well as CuSe mole ratio in the target. Under an optimized condition, $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ thin films grew with strong [112]. [220/204] and [312/116] reflections. Both $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ films were found to exhibit a high absorption coefficient of $104^4cm^{-1}\;Cu_2ZnSnSe_4$ film showed a band gap of 1.5eV which closes to the optimum band gap of an ideal solar absorber for a solar cell. On the other side, an increase of optical band gap from 1.0 to 1.25eV was found to be proportional with an increase of Zn concentration in the $CulnZnSe_2$ film. All films in this study revealed a p-type semiconductor characteristic.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.74.2-74.2
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• 2000

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2004년도 추계 기술심포지움 초록집
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• pp.49-49
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• 2004