• Journal of Electrochemical Science and Technology
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• v.3 no.2
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• pp.85-89
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• 2012

This study demonstrates the direct anodic electrodeposition of polypyrrole (PPy), poly(3,4-ethyl-enedioxythiophene) (PEDOT), and polythiophene (PTh) on Cu electrodes by employing a corrosion inhibitor, succinonitrile (SN). SN was found to suppress anodic Cu dissolution beyond the oxidation potential of the polymer monomers. It is also revealed that the Cu surface passivated by SN is still adequately conductive to allow the redox reaction of 1,4-difluoro-2,5-dimethoxybenzene (FMB) and the oxidation of the polymer monomers. Through both cyclic voltammetry and galvanostatic techniques, PPy, PEDOT, and PTh films were successfully synthesized on Cu electrodes in the presence of SN, and the redox behaviors of the films were evaluated.

• Proceedings of the KWS Conference
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• 2007.11a
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• pp.227-228
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• 2007

본 연구에서는 플립칩 범프를 형성하는 여러 가지 방법 중 전해도금을 이용하여 Sn-0.7wt%Cu 솔더 범프를 형성 하고자 하였다. 전류밀도에 따른 전류 효율을 알아보기 위하여 전류밀도에 따른 실험적 증착 속도와 이론적 속도를 비교 분석 하였다. 도금 두께는 FE-SEM(Field Emission Scanning Electron Microscope)을 이용하여 측정 하였으며 최종적으로 $20{\mu}m{\times}20{\mu}m{\times}10{\mu}m$ 크기에 $50{\mu}m$ 피치를 가지는 straight wall 형 Sn-0.7wt%Cu 솔더 범프를 형성하고자 하였다.

• Journal of Welding and Joining
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• v.20 no.5
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• pp.72-77
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• 2002

Flip-chip interconnection that uses solder bump is an essential technology to improve the performance of microelectronics which require higher working speed, higher density, and smaller size. In this paper, the shear strength of Cr/Cr-Cu/Cu UBM structure of the high-melting solder b01p and that of low-melting solder bump after aging is evaluated. Observe intermetallic compound and bump joint condition at the interface between solder and UBM by SEM and TEM. And analyze the shear load concentrated to bump applying finite element analysis. As a result of experiment, the maximum shear strength of Sn-97wt%Pb which was treated 900 hrs aging has been decreased as 25% and Sn-37wt%Pb sample has been decreased as 20%. By the aging process, the growth of $Cu_6Sn_5$ and $Cu_3Sn$ is ascertained. And the tendency of crack path movement that is interior of a solder to intermetallic compound interface is found.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.109-110
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• 2007

본 연구에서는 범프를 형성하는 여러 가지 방법중 전해도금을 이용하여 Sn-Cu 솔더 범프를 형성하고자 하였다. 기초적인 도금 특성을 알아보기 위하여 전류밀도에 따른 중착속도, 도금 시간에 따른 도금두께 등을 측정하였으며, 최종적으로는 $20{\times}20{\times}10{\mu}m$ 크기에 $50{\mu}m$피치를 갖는 Sn-Cu 솔더 범프를 형성하고자 하였다.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.289-299
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• 2005

The ball shear force was investigated in terms of test parameters, i.e. displacement rate and probe height, with an experimental and non-linear finite element analysis for evaluation of the solder joint integrity in area array packages. The increase in the displacement rate and the decrease in the probe height led to the increase in the shear force. Excessive probe height could cause some detrimental effects on the test results such as unexpected high standard deviation and probe sliding from the solder ball surface. The low shear height conditions were favorable for assessing the mechanical integrity of the solder joints. The mechanical and electrical properties of the Sn-37Pb/Cu and Sn-3.5Ag/Cu BGA solder joints were also investigated with the number of reflows. The total thickness of the intermetallic compound (IMC) layers, consisting of Cu6Sn5 and Cu3Sn, was increased as a function of cubic root of reflow time. The shear force was increased up to 3 or 4 reflows, and then was decreased with the number of reflows. The fracture occurred along the bulk solder, in irrespective of the number of reflows. The electrical resistivity was increased with increasing the number of reflows.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.141-145
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• 2001

Sn-3.5Ag 무연 솔더에 Cu를 첨가한 3원계 합금을 만든 후 압연과 열처리한 후 크리프 특성을 연구하였다. 모든 솔더 합금에서 1차 크리프는 거의 관찰되지 않았으며, 2차와 3차 크리프가 대부분을 차지하였고, 최소 크리프 변형율은 Cu 함량이 0.75 wt %에서 최소이었고, 응력 지수는 약 4이었으며, 파단 시간 또한 0.75 wt% Cu에서 가장 길었다. 크리프 기구는 격자 확산에 의한 전위의 상승과 전위 활주에 의한 고온 크리프임을 앞 수 있었으며, Cu의 첨가는 1 wt% 가지 연성에 큰 영향을 주지 않았으나, 1.5 wt% 첨가했을 경우 연성은 크게 감소하였다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.02a
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• pp.37-59
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• 2004

In the case of Ni/Au finished pad on the package side, the solder joint of SnAgCu system can bring brittle fracture under impact load such as drop test. Therefore, it's difficult to prevent the brittle fracture of lead-free solder, by controlling Cu content. The failure locus existing on the interface between $(Ni,Cu)_3Sn_4\;and\;(Cu,Ni)_6Sn_5$ IMC layers must be changed to other site in order to avoid brittle fracture due to impact load. It was not found any clear evidence that there were two IMC layers exist. But it was strongly assumed these were two layers which have different Cu-Ni composition. From the above analysis it was assumed that Cu atom in the solder alloy or substrate seemed to affect IMC composition and cause to IMC brittle fracture.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.99-102
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• 2003

Reactions between 48Sn-52In solder and under bump metallurgies(UBM) such as 100nm $Ti/8{\mu}m$ Cu and 300nm Al/400nm Ni(V)/400nm Cu have been investigated, and the shear strength of 48Sn-52In solder bumps on each UBM has been evaluated. While intermetallic compounds with two different morphologies were continuously thickened on Ti/Cu with repeating the reflow process, the intermetallics on Al/Ni(V)/Cu spalled into the solder with increasing the number of reflow times. The solder bumps on Ti/Cu exhibited higher shear strength than those on Al/Ni(V)/Cu.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.99-99
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• 2014

Transparent oxide semiconductors (TOSs) are. currently attracting attention for application to transparent electrodes in optoelectronic devices and active channel layers in thin-film transistors. One of the key issues for the realization of next generation transparent electronic devices such as transparent complementary metal-oxide-semiconductor thin-film transistors (CMOS TFTs), transparent wall light, sensors, and transparent solar cell is to develop p-type TOSs. In this talks, I will introduce issues and status related to p-type TOSs such as LnCuOQ (Ln=lanthanide, Q=S, Se), $SrCu_2O_2$, $CuMO_2$ (M=Al, Ga, Cr, In), ZnO, $Cu_2O$ and SnO. The growth and properties of SnO and Cu-based oxides and their application to electronic devices will be discussed.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.47-53
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• 2000

The fluxless wetting properties of TSM-coated glass substrate were evaluated by the wetting balance method. We could estimate the wettability of the TSM with new parameters obtained from the wetting balance test for one side-coated specimen. It was more effective in wetting to use Cu as a wetting layer and Au as a protection layer than to use Au itself as a wetting layer. The SnSb solder showed better wettability than SnAg, SnBi, and SnIn solders. The contact angle of the one side-coated glass substrate to the Pb-free solders could be calculated from the farce balance equation by measuring the static force and the tilt angle.