• Journal of Sensor Science and Technology
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• v.7 no.5
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• pp.350-355
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• 1998

We fabricated a photoconductive cell made of polycrystalline CdS thick film which has high photo-sensitivity using a print/sintering method. The resultant grain size is about $4\;{\mu}m$. When $CuCl_2$ of 0.06 to 0.12 mg is added, the sensitivity and the ratio of photocurrent to dark current are 0.8 and $10^5$, respectively. The response wavelength is 511 nm. The rise and decay response times are 50 and 20 ms, respectively. In addition, the maximum power dissipation is beyond 80mW. We noticed that the addition of $CuCl_2$ between 0.06 and 0.12 mg to 1g of CdS results in a reliable formation of photoconductive sensor.

• Fibers and Polymers
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• v.5 no.4
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• pp.303-308
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• 2004

A natural colorant was extracted from Cassia tara L. using buffer solutions (pH: 2-11) as extractants. The dyeing solution (Cassia tara L. extract) extracted using pH 9 buffer solution was found to give the highest K/S values of dyed fabrics. Cotton and silk fabrics were dyed with Cassia tara L. extract at $60^{\circ}C$ for 60 min with pre-treatment of various metal salts as mordants. It was found that Cassia tara L. extract was polygenetic dyestuffs and its major components were anthraquinones. Studies have been made on the effects of the kind of mordant on dyeing properties and colour fastnesses of cotton and silk fabrics. The K/S of cotton fabrics increased in the order of the dyeing using $FeSO_4 >CuSO_4> ZnSO_4> MnSO_4\cong Al_2(SO_4)_3 > NiSo_4 > none$, however, the K/S of silk fabrics increased in the order of the dyeing using $FeSO_4 > CuSO_4 > ZnSO_4\cong Al_2(SO_4)_3 > MnSO_4\cong NiSO_4 > none$. It was found that the K/S values of dyed fabrics were largely affected by the colour difference $(\DeltaE)$ between mordanted fabric and control fabric. However, they were not depended on the content of mordanted metal ion of the fabrics. Mordants $FeSO_4$ and CuSO_4$ for cotton fabric, $FeSO_4,\; CuSO_4,\; and\; Al_2(S0_4)_3$ for silk fabric were found to give good light fastness (rating 4).

• Membrane Journal
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• v.34 no.1
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• pp.50-57
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• 2024

In this experiment, Pd-Ag-Cu membrane was manufactured using electroless plating on an α-Al₂O₃ support. Pd, Ag and Cu were each coated on the surface of the support through electroless plating and heat treatment was performed for 18 h at 500℃ in H₂ in the middle of electroless plating to form Pd alloy. The surface of the Pd-Ag-Cu membrane was observed through Scanning Electron Microscopy (SEM), and the thickness of the Pd membrane was measured to be 7.82 ㎛ and the thickness of the Pd-Ag-Cu membrane was measured to be 3.54 ㎛. Energy dispersive X-ray spectroscopy and X-ray diffraction analysis confirmed the formation of a Pd-Ag-Cu alloy with a composition of Pd-78wt%, Ag-8.81wt% and Cu-13.19wt%. The gas permeation experiment was conducted under the conditions of 350~450℃ and 1~4 bar in H₂ single gas and H₂/N₂ mixed gas. The maximum H₂ flux of the hydrogen separation membrane measured in H₂ single gas is 74.16 ml/cm²·min at 450℃ and 4 bar for the Pd membrane and 113.64 ml/cm²·min at 450℃ and 4 bar for the Pd-Ag-Cu membrane. In the case of the separation factor measured in H₂/N₂ mixed gas, separation factors of 2437 and 11032 were measured at 450℃ and 4 bar.

• Applied Chemistry for Engineering
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• v.8 no.5
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• pp.804-810
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• 1997

A new catalyst system composed of a main catalyst(copper chloride) and promotors of zinc chloride, tin, and cadminum showed excellent performances in the MCS synthesis from silicon and methylchloride. The mixture of catalyst/silicon(5/95), Zn/Cu=0.1, Sn/Cu=0.001, and Cd/Cu=0.001 was mixed in a slurry phase and activated into the contact mass, then it was used for MCS synthesis. The average selectivity was 92% at the silicon consumption of 92% and reaction rate was 175(g-MCS/hr.kg-silicon) at conversion of silicon.

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1212-1220
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• 2000

Bi-2223 초전도체계에서 석출물을 flux-pinning center로 이용할 수 있는지 가능성을 타진하기 위하여 $Bi_{1.8}$P $b_{0.4}$S $r_{2}$C $a_{2.2}$C $u_3$ $O_{8}$ 조성을 가진 Bi-2223/Ag 선재를 반응온도, 산소분압, 시간 등을 변화시키면서 열처리를 행하였다. 열처리 후 석출물들은 XRD, SEM, TEM, EDS로 분석하였다. Bi-2223 모상내의 (Ca, Sr)$_2$(Pb,Bi) $O_4$, B $i_{0.5}$ P $b_3$S $r_2$C $a_2$Cu $O_{12+}$$\delta$/ (3221)와 같은 2차상들의 크기와 분포는 2223 입자들의 연결성을 파괴하지 않고 열처리 조건에 의해서 조절할 수 있었다. 서냉 열처리가 된 시편은 임계전류밀도( $J_{c}$)값이 증가하였는데, 이는 2223 입자내 나노미터 크기로 형성된 석출물들이 flux-pinning sites로 작용한 것으로 추정된다.다.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.73-76
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• 2021

This thesis described the optical and electrical properties of the alternating current powder electroluminescent device based on Ag nanowire as a transparent electrode. The Ag nanowire electrode showed the morphology of 20 nm in diameter and 15 ㎛ in length. The transparent electroluminescent devices that were fabricated using the nanomilled ZnS : Cu, Mn phosphor by bar-coating process showed the transmittance of 67%. In order to improve the luminous efficiency, it is necessary to apply the transparent dielectric layer and increase the amount of the nanophosphor while maintaining the transmittance.

• Korean Journal of Materials Research
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• v.22 no.5
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• pp.259-273
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• 2012

Chalcogenide-based semiconductors, such as $CuInSe_2$, $CuGaSe_2$, Cu(In,Ga)$Se_2$ (CIGS), and CdTe have attracted considerable interest as efficient materials in thin film solar cells (TFSCs). Currently, CIGS and CdTe TFSCs have demonstrated the highest power conversion efficiency (PCE) of over 11% in module production. However, commercialized CIGS and CdTe TFSCs have some limitations due to the scarcity of In, Ga, and Te and the environmental issues associated with Cd and Se. Recently, kesterite CZTS, which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of $10^4cm^{-1}$, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTS-based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. The recent development of kesterite-based CZTS thin film solar cells is summarized in this work. The new challenges for enhanced performance in CZTS thin films are examined and prospective issues are addressed as well.

• Applied Biological Chemistry
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• v.6
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• pp.57-59
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• 1965

According to the result of the observations on the effect of the reagents, $CuSO_4{\cdot}5H_2O$, $ZnSO_4{\cdot}7H_2O$ $MnSO_4{\cdot}4H_2O$, $HgCl_2$, upon the mycelial growth of psalliota campestris $HgCl_2$ showed the strongest effect on checking the mycelial growth $(,.008{\sim}0.01%)$ $CuSO_4{\cdot}5H_2O(0.030%)$, $ZnSO_4{\cdot}7H_2O(0.080%)$, came next and the $MnSO_4{\cdot}4H_2O(0.100%)$ was the weakest. Writer also found that showed the promoting effect of the mycelial growth in appropriate Concentration (at $0.015%\;CuSO_4{\cdot}5H_2O$, $0.030%ZnSO_4{\cdot}7H_2O$).

• Journal of the Korean Society for Heat Treatment
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• v.8 no.1
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• pp.65-74
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• 1995

This research was performed to investigate the effect of ageing on grain refinement of 82wt%Cu-13.5wt%Al-4.5wt%Ni-0.1wt% misch metal alloy with ageing temperature and time. The results obtained in this study are as follows; The variation of transformation temperature with ageing temperature had very influence on ageing time at $300^{\circ}C$. But it had not influence on ageing time at $100^{\circ}C$. The variation of transformation temperature after second reversed transformation cycle was not occured in martensitic phase ageing, but $M_s$ point was appeared equally with third reversed transformation cycle in parent phase ageing. The variation of $M_s$ point was not nearly with ageing time at $100^{\circ}C$ ageing temperature. But it was decreasing with ageing time at $300^{\circ}C$ ageing temperature and $A_s$ point was increasing with ageing time. Structure of parent phase ageing was being M18R martensitic and N2H martensitic phase. It was found that ${\alpha}$ and ${\gamma}_2$ phase were created by ageing of long time at $300^{\circ}C$ ageing temperature.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.81-88
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• 2019

In this study, the effects of graphene oxide (GO) addition on electromigration (EM) lifetime of Sn-3.0Ag-0.5Cu Pb-free solder joint between a ball grid array (BGA) package and printed circuit board (PCB) were investigated. After as-bonded, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) was formed at the interface of package side finished with electroplated Ni/Au, while $Cu_6Sn_5$ IMC was formed at the interface of OSP-treated PCB side. Mean time to failure of solder joint without GO solder joint under $130^{\circ}C$ with a current density of $1.0{\times}10^3A/cm^2$ was 189.9 hrs and that with GO was 367.1 hrs. EM open failure was occurred at the interface of PCB side with smaller pad diameter than that of package side due to Cu consumption by electrons flow. Meanwhile, we observed that the added GO was distributed at the interface between $Cu_6Sn_5$ IMC and solder. Therefore, we assumed that EM reliability of solder joint with GO was superior to that of without GO by suppressing the Cu diffusion at current crowding regions.