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http://dx.doi.org/10.6117/kmeps.2019.26.3.081

Effects of Graphene Oxide Addition on the Electromigration Characteristics of Sn-3.0Ag-0.5Cu Pb-free Solder Joints  

Son, Kirak (School of Materials Science and Engineering, Andong National University)
Kim, Gahui (School of Materials Science and Engineering, Andong National University)
Ko, Yong-Ho (Joining R&D Group, Korea Institute of Industrial Technology (KITECH))
Park, Young-Bae (School of Materials Science and Engineering, Andong National University)
Publication Information
Journal of the Microelectronics and Packaging Society / v.26, no.3, 2019 , pp. 81-88 More about this Journal
Abstract
In this study, the effects of graphene oxide (GO) addition on electromigration (EM) lifetime of Sn-3.0Ag-0.5Cu Pb-free solder joint between a ball grid array (BGA) package and printed circuit board (PCB) were investigated. After as-bonded, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) was formed at the interface of package side finished with electroplated Ni/Au, while $Cu_6Sn_5$ IMC was formed at the interface of OSP-treated PCB side. Mean time to failure of solder joint without GO solder joint under $130^{\circ}C$ with a current density of $1.0{\times}10^3A/cm^2$ was 189.9 hrs and that with GO was 367.1 hrs. EM open failure was occurred at the interface of PCB side with smaller pad diameter than that of package side due to Cu consumption by electrons flow. Meanwhile, we observed that the added GO was distributed at the interface between $Cu_6Sn_5$ IMC and solder. Therefore, we assumed that EM reliability of solder joint with GO was superior to that of without GO by suppressing the Cu diffusion at current crowding regions.
Keywords
Graphene oxide (GO); Pb-free solder; Electromigration (EM); Sn-3.0Ag-0.5Cu (SAC305); Intermetallic compound (IMC);
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Times Cited By KSCI : 4  (Citation Analysis)
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