• Korean Chemical Engineering Research
• /
• v.61 no.2
• /
• pp.196-201
• /
• 2023

In this study, a CNT fiber flexible electrode grafted with CuO nanoparticles (CuO NPs) and polyaniline (PANI) was developed and applied to a nonenzymatic electrochemical sensor for H₂O₂ detection. CuO NPs/PANI/CNT fiber electrode was fabricated through the synthesis and deposition of PANI and CuO NPs on the CNT fiber surface using an electrochemical method. Surface morphology and elemental composition of the CuO NPs/PANI/CNT fiber electrode were characterized by scanning electron microscope with energy dispersive X-ray spectrometry. And its electrochemical characteristics were investigated by cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) and chronoamperometry (CA). Compared with a bare CNT fiber as a control group, the CuO NPs/PANI/CNT fiber electrode showed a 4.78-fold increase in effective surface area and a 8.33-fold decrease in electron transfer resistance, which leads to excellent electrochemical properties such as a good electrical conductivity and an efficient electron transfer. These improved characteristics were due to the synergistic effect through the grafting of CNT fiber, PANI and CuO NPs. As a result, this electrode enhanced the H₂O₂ sensing performance.

• Progress in Superconductivity
• /
• v.2 no.2
• /
• pp.65-70
• /
• 2001

$Pb/Bi_2Sr_2CaCu_2O_{8+\delta}$-single-crystal junctions with the tunneling direction along the c axis of the crystal were fabricated to obtain an s-wave-superconductor/d-wave-superconductor Josephson junctions. The tunneling R (T) curves and current-voltage characteristics show distinct features which can be explained only under the assumption that the order parameter of high-$T_c/Bi_2Sr_2CaCu_2O_{8+{\delta}}$ superconductors has a pure d-wave symmetry, which is in contrast to the case of $YBa_2Cu_3O_{7+{\delta$}}$erconductors where a minor s-wave component is also present..

• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.4
• /
• pp.39-45
• /
• 2020

The Cu/Cu2O/CuO photoelectrode has been successfully fabricated by Rapid Thermal Annealing technique. The structural characterization of fabricated photoelectrode was performed using X-Ray diffraction, while elemental composition of the prepared material has been checked with X-Ray Photoelectron Spectroscopy. The synthesis parameters are optimized on the basis of photoelectrochemical performance. The best photoelectrochemical performance has been observed for the Cu/Cu2O/CuO photoelectrode fabricated at 550 ℃ oxidation temperature and oxidation time of 50 seconds with highest photocurrent density of -3 mA/㎠ at -0.13 V vs. RHE.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.49-53
• /
• 1997

In this paper, YbBa$_{2}$Cu$_{3}$O$_{x}$ superconductor was sintered by means of conventional solid reaction and the textured YbBa$_{2}$Cu$_{3}$O$_{x}$ was prepared by the Melted-Condensed Process in which SmBa$_{2}$Cu$_{3}$O$_{x}$ crystal was used as seed crystal to introduce the YbBa$_{2}$Cu$_{3}$O$_{x}$ crystal growth. The texture of YbBa$_{2}$Cu$_{3}$O$_{x}$ was examined by X-ray diffraction, and the fracture of YbBa$_{2}$Cu$_{3}$O$_{x}$ sample was observed by SEM, which proved the sample was well oriented. After oxygen absorption of the textured YbBa$_{2}$Cu$_{3}$O$_{x}$ sample, it's critical temperature was measureed to be 86K.eed to be 86K.

• Journal of the Korean Chemical Society
• /
• v.47 no.6
• /
• pp.614-618
• /
• 2003

$Sr_2Ru_{1-x}Cu_xO_{4-y}(0.0{\le}x{\le}0.5)$ compounds were prepared using a conventional solid state reaction. Based on the Rietveld refinements of X-ray diffraction results, it is revealed that $Sr_2Ru_{1-x}Cu_xO_{4-y}$ compounds are the single phases with K2NiF4 type tetragonal system in the range of 0=x=0.3, while the mixed phases of$Sr_2RuO_4$ and $Sr_2CuO_3$ in the range of $0.4{\le}x{\le}0.5$. By means of X-ray photoelectron spectroscopy, the valence states of Ru and Cu in $Sr_2Ru_{1-x}Cu_xO_{4-y}$, have been confirmed to 4+ and 2+, respectively. The bond length difference between $Ru-O_1 ({\times}4)\;and\;Ru-O_2 ({\times}2)\;in\;RuO_6$ octahedron is gradually decreased with increasing Cu content in $Sr_2Ru_{1-x}Cu_xO_{4-y}$, which results in the lower c/a ratio. So, it might be assured that the variation of local symmetry of $RuO_6$ octahedron is very closely related to the transporting property of $Sr_2Ru_{1-x}Cu_xO_{4-y}$ compounds. The behavior of resistivity discloses that the metallic property in $Sr_2RuO_4$ changes into the semiconducting one in proportion to the Cu content in $Sr_2Ru_{1-x}Cu_xO_{4-y}$.

• Journal of the Korean Ceramic Society
• /
• v.32 no.1
• /
• pp.106-112
• /
• 1995

In order to examine the effect of CuO and Al2O3 addition on the electrical conductivity of ZnO, both Al2O3 (0, 1, 2, 5, 10at.%) and CuO (1, 5at.%) were added to ZnO. Al2O3 addition (~2at.% Al) increased the total electrical conductivity of ZnO which was already decreased by CuO doping effect Above solid solubility of Al (~2at.%), ZnAl2O4 formed and the total electrical conductivity decreased due to the decrease of sintered density. Impedance measurements were used to know the reason and degree of contribution of three resistive elements, ZnO grain, ZnO/CuO, and ZnO/ZnO grain boundaries, to the total electrical conductivity changed.

• Korean Journal of Materials Research
• /
• v.6 no.7
• /
• pp.684-691
• /
• 1996

To enhance the formation of Bi,Sr,Ca,Cu,O,(Bi-2223) single phase in a shorter reaction time, the intermediate compounds such as Bi,Sr,CuO,(Bi-2201). BizSr,CaCuz08(Bi-2212) and (Ca, Sr,, ,9)CuOz in the Bi-Sr-Ca-Cu-0 system were used as the precursors. The formation of Bi-2223 was enhanced in the mixture of Bi-2201 and (Ca, ,,Sr, 119)C~eOsZpe,c ially from the mixture with (Ca, 9I Sr, ,,)CuO,-rich composition compared to Bi, iPb, 4Sr2Ca,Cu3010-cxo mposition. The formation of Bi- 2223 essentially completed within 60h at 860$^{\circ}$C and 870$^{\circ}$C. However, a small amount of the remnant Bi-2212 phase did not disappear even after a prolonged reaction at 870'C. The merit of the proposed synthetic method using the intermediate precusors can be summarized as a shorter reaction time for the formation of Bi-2223 phase, in addition to a smaller amount of second phases compared to the conventional solid-state reaction method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.1018-1021
• /
• 2001

1018-1021 The CuO-P$_2$O$_{5}$ containing P$_2$O$_{5}$ as glass-former were prepared by press-quenching method on the copper plate. By post-heat treatment of these glasses, the CuO-P$_2$O$_{5}$ -V$_2$O$_{5}$ -g1ass ceramics was obtained and the crystallization behavior and dc conductivities were investigovted. The heat-treated glass-ceramics decreased in electrical conductivity by the order of 10$^1$ compared to amorphous glass. The linear relationship between In($\sigma$T) and T$^{-1}$ indicated that electrical conduction in CuO-P$_2$O$_{5}$ -V$_2$O$_{5}$ -gass occurred by a small polaron hopping.

• Korean Journal of Materials Research
• /
• v.10 no.2
• /
• pp.160-165
• /
• 2000

We have investigated the electrical and diffusion barrier properties of MgO produced on the surface of Cu (Mg) alloy. Also the diffusion barrier property of the interfacial MgO between Cu alloy and $SiO_2$ has been examined. The results show that the $150\;{\AA}$-MgO layer on the surface remains stable up to $700^{\circ}C$, preventing the interdiffusion of C Cu and Si in Si/MgO/Cu(Mg) structure. It also has the breakdown voltage of 4.5V and leakage current density of $10^{-7}A/\textrm{cm}^2/$. In addition, the combined structure of $Si_3N4(100{\AA})/MgO(100{\AA})$ increases the breakdown voltage up to lOV and reduces the leakage current density to $8{\tiems}10^{-7}A/\textrm{cm}^2$. Furthermore, the interfacial MgO formed by the chemical reac­t tion of Mg and $SiO_2$ reduces the diffusion of copper into $SiO_2$ substrate. Consequently, Cu(Mg) alloy can be applied as a g gate electrode in TFT /LCDs, reducing the process steps.

• Korean Journal of Materials Research
• /
• v.14 no.12
• /
• pp.829-834
• /
• 2004

Annealing of $Cu(B)/Ti/SiO_2$ in vacuum has been carried out to investigate the effects of Ti underlayer on microstructure in $Cu(B)/Ti/SiO_2$ structures. For comparison, $Cu(B)/Ti/SiO_2$ structures was also annealed in vacuum. Three different temperature dependence of Cu growth can be seen in $Cu(B)/Ti/SiO_2$; B precipitates- pinned grain growth, abnormal grain growth, normal grain growth. The Ti underlayer having a strong affinity for B atoms reacts with the out-diffused B to the Ti surface and forms titanium boride at the Cu-Ti interface. The formation of titanium boride acts as a sink for the out-diffusion of B atoms. The depletion of boron in grain boundaries of Cu films, as results of the rapid diffusion of B along the grain boundaries and the insufficient segregation of B to the grain boundaries, induces grain boundaries to migrate and causes the abnormal grain growth. The increased bulk diffusion coefficient of B within Cu grains can be responsible for the normal grain growth occurring in the annealed $Cu(B)/Ti/SiO_2\;at\;600^{\circ}C$. In contrast, the $Cu/SiO_2$ structures show only the abnormal growth of grains and their sizes increasing as the temperature increases above $400^{\circ}C$.