• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.91-97
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• 2022

The wettability and rheological properties of solder paste with the size of the solder powder were evaluated. To formulate the solder paste, three types of solder powder were used: T4 (20~28 ㎛), T5 (15~25 ㎛), and T6 (5~15 ㎛). The viscosities of the T4, T5, and T6 solder pastes at 10 RPM were 155, 263, and 418 Pa·s, respectively. After 7 days, the viscosity of the T4 solder paste slightly increased by 2.6% and that of T5 was increased by 20.6%. The viscosity of the T6 solder paste after 7 days could not be measured due to high viscosity. The viscosity variation with solder particle size also affected on the printability of the solder. In the case of the T4 solder paste, printability, slump, bridging, and soldering properties were excellent. On the other hand, T5 showed slight dewetting and solder ball defects. Especially, T6, which the smallest powder size, showed poor printability and dewetting at the edge of solder.

• Proceedings of the KWS Conference
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• 2007.11a
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• pp.223-226
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• 2007

본 연구에서는 Ag anisotropic conductive adhesive(ACA)의 종류, 경화 조건 및 안테나 패턴의 재질에 따른 flip chip bonding된 RFID die의 접합부 신뢰성이 조사되었다. 접합강도 측정에 의하여 접합강도가 최적화되는 공정 시간을 결정할 수 있었으며, 그러한 최적의 공정조건에서는 paste-type Ag ink로 인쇄된 안테나 상에서의 RFID die의 접합강도가 Cu 재질 안테나에 비해 상대적으로 높게 측정됨을 알 수 있었다. RFID tag의 인식거리 측정 시험을 통하여 적절한 경화 조건이 적용된다면 안테나의 재질이 인식거리 변화에 가장 주요한 영향을 미치는 인자임을 알 수 있었다. 아울러 Cu 안테나 패턴은 RFID die의 접합 과정에서 곡률을 가지며 휘어지면서 인식거리와 관련된 long-tem reliability를 악화시킬 수 있음을 관찰할 수 있었다.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.71-76
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• 2012

A chip interconnection technology for smart fabrics was investigated by using flip-chip bonding of SnBi low-temperature solder. A fabric substrate with a Cu leadframe could be successfully fabricated with transferring a Cu leadframe from a carrier film to a fabric by hot-pressing at $130^{\circ}C$. A chip specimen with SnBi solder bumps was formed by screen printing of SnBi solder paste and was connected to the Cu leadframe of the fabric substrate by flip-chip bonding at $180^{\circ}C$ for 60 sec. The average contact resistance of the SnBi flip-chip joint of the smart fabric was measured as $9m{\Omega}$.

• ETRI Journal
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• v.35 no.6
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• pp.1152-1155
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• 2013

A cost-effective and simple solder on pad (SoP) process is proposed for a fine-pitch microbump interconnection. A novel solder bump maker (SBM) material is applied to form a 60-${\mu}m$ pitch SoP. SBM, which is composed of ternary Sn3.0Ag0.5Cu (SAC305) solder powder and a polymer resin, is a paste material used to perform a fine-pitch SoP through a screen printing method. By optimizing the volumetric ratio of the resin, deoxidizing agent, and SAC305 solder powder, the oxide layers on the solder powder and Cu pads are successfully removed during the bumping process without additional treatment or equipment. Test vehicles with a daisy chain pattern are fabricated to develop the fine-pitch SoP process and evaluate the fine-pitch interconnection. The fabricated Si chip has 6,724 bumps with a 45-${\mu}m$ diameter and 60-${\mu}m$ pitch. The chip is flip chip bonded with a Si substrate using an underfill material with fluxing features. Using the fluxing underfill material is advantageous since it eliminates the flux cleaning process and capillary flow process of the underfill. The optimized bonding process is validated through an electrical characterization of the daisy chain pattern. This work is the first report on a successful operation of a fine-pitch SoP and microbump interconnection using a screen printing process.

• Journal of Welding and Joining
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• v.29 no.5
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• pp.95-98
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• 2011

Recently, there is a growing tendency that fine-pitch electronic devices are increased due to higher density and very large scale integration. Finer pitch printed circuit board(PCB) is to be decrease insulation resistance between circuit patterns and electrical components, which will induce to electrical short in electronic circuit by electrochemical migration when it exposes to long term in high temperature and high humidity. In this research, the effect of soldering flux acting as an electrical carrier between conductors on electrochemical migration was investigated. The PCB pad was coated with OSP finish. Sn3.0Ag0.5Cu solder paste was printed on the PCB circuit and then the coupon was treated by reflow process. Thereby, specimen for ion migration test was fabricated. Electrochemical migration test was conducted under the condition of DC 48 V, $85^{\circ}C$, and 85 % relative humidity. Their life time could be increased about 22% by means of removal of flux. The fundamentals and mechanism of electrochemical migration was discussed depending on the existence of flux residues after reflow process.

• Journal of Welding and Joining
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• v.35 no.3
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• pp.21-27
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• 2017

A soldering temperature of ($235{\pm}3$) $^{\circ}C$ is described in ISO 9455-15 for the copper corrosion test. However, this temperature is not suitable for performing lead-free solder pastes. We evaluated the compatibility of a lead-free solder paste in the experimental conditions of (Liquidus temperature + ($35{\pm}3$)) $^{\circ}C$. Based on the results after a Cu corrosion test, a proper temperature for Pb-free soldering was (melting point+($35{\pm}3$)) $^{\circ}C$. Criteria used to evaluate corrosion due to discoloration of flux residue is described in ISO 9455-15, but a more quantitative evaluation standard is needed. In this study, experimental error level was estimated by analyzing flux residue after a corrosion test for 72, 500 hours of specimens using EDS analysis with acceleration voltage. It was determined that the copper area at the flux residue boundary is suitable for the EDS analysis area.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.35-43
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• 1999

Microstructures and dielectric properties of (Sr$\_$1-x/Ca$\_$x/) TiO$_3$-0.006Nb$_2$O$\_$5/ (0.05$\leq$x$\leq$0.2) boundary layer ceramics were investigated. The samples fired in a reducing atmosphere(N$_2$) were painted on the surface with CuO paste for the subsequent grain boundary diffusion, and then annealed at 1100$^{\circ}C$ for 2 hrs. The metal oxide of CuO infiltrated by thermal diffusion from surface of sample presents continuously in not grain but only grain boundary, and makes up thin boundary phase. The SEM photo, and EDAX revealed that CuO was penetrated rapidly into the bulk along the grain boundaries during the annealing. The average grain sizes is continuously increased as the content of substitutional Ca is increased from 5[mol%] to 15[mol%], but the average grain size of the sample with content of 20[mol%] Ca is slightly decreased. In the samples with content of 10∼15[mol%] Ca, excellent dielectric properties were obtained as follows; dielectric constant <25000, dielectric loss <0.3[%], and capacitance change rate as a function of temperature <${\pm}$10[%], respectively. All samples in this study exhibited dielectric relaxation with frequency as a functior of the temperature.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.878-881
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• 2006

In this paper, the luminance and resistance from different electrode materials of external electrode fluorescent lamp are measured and analyzed. New materials and process technology of external electrode are very important for the developed characteristics in lamp fabrication. In this experiments, three different types for the forming of external electrode are Cu and Al taping, silver paste, Ni and Cu electrode-less plating methods. In the measurements of luminance, the results of brightness by Ni and Au plating methods for the external electrode on lamp glass are presented and also compared with the results by the methods using different electrode materials. The measured resistance values of Ni and Au plating process showed a little bit higher than that of silver paste process in spite of developed results of brightness. But the Ni and Ni/Au plating processes are demonstrated best results and are also showed a little bit different brightness due to different previous sulfate etching treatments.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.3
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• pp.549-554
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• 2007

In this paper, the luminance and resistance from different electrode materials of external electrode fluorescent lamp are measured and analyzed. New materials and process technology of external electrode are very important for the developed characteristics in lamp fabrication. This experiment, three different types for the forming of external electrode are Cu and Al taping, silver paste, Ni and Cu electrode-less plating methods. In the measurement of luminance, the results of brightness by Ni and Au plating methods for the external electrode on lamp glass are presented and also compared with the results by the methods using different electrode materials. The measured resistance values of Ni and Au plating process showed a little bit higher than that of silver paste process in spite of developed results of brightness. The Ni and Ni/Au plating processes are demonstrated best results and also showed a little bit different brightness due to different previous surface etching treatments.

• Journal of the Korean Chemical Society
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• v.40 no.5
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• pp.341-346
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• 1996

Electrochemical determination of iodide was carried out by stripping voltammetry with a $(Cin)Cu(NO_3)_2$ modified-carbon paste electrode. Iodide was coordinated onto the electrode surface containing $(Cin)Cu(NO_3)_2$ via ion exchange. The oxidation peak potential of incorporated iodide was ＋0.72 V. The optimum analytical conditions for the determination of iodide were investigated using linear sweep voltammetry. Optimum conditions for the electrochemical determination of iodide were as follows: i) A predeposition solution was 0.1 M $KNO_3.$ ii) The deposition time was 10 min. iii) The composition of the electrode was 40% (w/w). The detection limit for iodide was $1.0{\times}10^{-6}M$ and the relative standard deviation was ${\pm}5.5%\;in\;2.0{\times}10^{-5}M$(four repetitions). The interference effect of other anions were also investigated. $Cl^-,\;Br^-,\;C_2O_4^{2-},\;and\;ClO_4^-$ ions do not interfere for the determination of iodide. When $SCN^-$ was added to the deposition solution, the oxidation peak current of iodide ion was decreased roughly 32%.