• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.621-624
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• 1999

Metalization technology of the fine patterns by electroless plating is required in place of electrodeposition as high-density printed boards(PCR) become indispensable with the miniaturization of electronic components. Electroless nickel plating is a suitable diffusion barrier between conductor meta1s, such as Al and Cu and solder is essetional in electronic packaging in order to sustain a long period of service. Moreover, Electroless nickel has particular characteristics including non-magnetic property, amorphous structure. wear resistance, corrosion protection and thermal stability In this study fundamental aspects of electroless nickel deposition were studied with effort of complexeing agents of different kinds. Then the property of electroless deposit are controlled by the composition of the deposition solution the deposition condition such as temperature and pH value and so on. the characteristics of the deposits has been carried out.

• 한국표면공학회지
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• 제48권6호
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• pp.260-268
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• 2015

The thermal barrier coating (TBC) for inner wall of liquid-fuel rocket combustor consists of NiCrAlY as bonding layer and $ZrO_2$ as a top layer. In most case, the plasma spray coating is used for TBC process and this process has inherent possibility of cracking due to large difference in thermal expansion coefficients among bonding layer, top layer and metal substrate. In this paper, we suggest crack-free TBC process by using a precise electrodeposition technique. Electrodeposited Ni-P/Cr double layer has similar thermal expansion coefficient to the Cu alloy substrate resulting in superior thermal barrier performance and high temperature oxidation resistance. We studied the effects of phosphorous concentrations (2.12 wt%, 6.97 wt%, and 10.53 wt%) on the annealing behavior ($750^{\circ}C$) of Ni-P samples and Cr double layered electrodeposits. Annealing temperature was simulated by combustion test condition. Also, we conducted SEM/EDS and XRD analysis for Ni-P/Cr samples. The results showed that the band layers between Ni-P and Cr are Ni and Cr, and has no formed with heat treatment. These band layers were solid solution of Cr and Ni which is formed by interdiffusion of both alloy elements. In addition, the P was not found in it. The thickness of band layer was increased with increasing annealing time. We expected that the band layer can improve the adhesion between Cr and Ni-P.

• Journal of Electrochemical Science and Technology
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• 제12권1호
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• pp.58-66
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• 2021

Spiral-wound woven wire meshes packed bed rotating cylinder electrode was used for the simultaneous removal of cadmium (Cd) and copper (Cu) from a binary solution. The effects of weight percent of each metal on the removal and current efficiencies were studied at an operating current of 345A, while the effect of current on the removal efficiency of both metals was investigated at three levels of current (240, 345.and 400 mA). The experiments were carried out at constant rotation speed 800 rpm, pH = 3, and a total concentration of metals (500 ppm). The results showed that the removal efficiency of copper increased from 89% to 99.4% as its weight percent increased from 20% to100%. In a similar fashion, the removal efficiency of cadmium increased from 81% to 97% as its weight percent increased from 20% to100%. The results confirmed that the removal efficiency of any metals declined in the presence of the other. Increasing of current resulted in increasing the removal efficiency of both metals at different weight percents. The results confirmed that current efficiencies for removing of copper and cadmium simultaneously decline with increasing of electrolysis time and weight percent of cadmium or with decreasing the weight percent of copper. Current efficiency was higher at the initial stage of electrolysis for all weight percents of metals. The results showed that the decay of copper concentration was exponential at all weight percents of copper, confirming that the electrodeposition of copper is under mass transfer control in the presence of cadmium. While the decay of cadmium concentration was linear at lower weight percent of cadmium then changed to an exponential behavior at high weight percent of cadmium in the presence of copper.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.35.1-35.1
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• 2011

New photovoltaic (PV) materials and manufacturing approaches are needed for meeting the demand for lower-cost solar cells. The prototypal thin-film photovoltaic absorbers (CdTe and $Cu(In,Ga)Se_2$) can achieve solar conversion efficiencies of up to 20% and are now commercially available, but the presence of toxic (Cd,Se) and expensive elemental components (In, Te) is a real issue as the demand for photovoltaics rapidly increases. To overcome these limitations, there has been substantial interest in developing viable alternative materials, such as $Cu_2ZnSnS_4$ (CZTS) is an emerging solar absorber that is structurally similar to CIGS, but contains only earth abundant, non-toxic elements and has a near optimal direct band gap energy of 1.4~1.6 ev and a large absorption coefficient of ${\sim}10^4\;cm^{-1}$. The CZTS absorber layers are grown and investigated by various fabrication methods, such as thermal evaporation, e-beam evaporation with a post sulfurization, sputtering, non-vacuum sol-gel, pulsed laser, spray-pyrolysis method and electrodeposition technique. In the present work, we report an alternative method for large area deposition of CZTS thin films that is potentially high throughput and inexpensive when used to produce monolithically integrated solar panel modules. Specifically, we have developed an aqueous chemical approach based on chemical bath deposition (CBD) with a subsequent sulfurization heat treatment. Samples produced by our method were analyzed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, absorbance and photoluminescence. The results show that this inexpensive and relatively benign process produces thin films of CZTS exhibiting uniform composition, kesterite crystal structure, and good optical properties. A preliminary solar cell device was fabricated to demonstrate rectifying and photovoltaic behavior.

• 전기화학회지
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• 제18권1호
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• pp.7-16
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• 2015

전기도금공정을 이용하여 상온에서 제조된 Cu박막의 특성에 미치는 피로인산구리용액의 화학성분($Cu^{2+}$ 농도, $K_4P_2O_7$ 농도, 첨가제 농도)의 영향에 대한 연구를 수행하였다. 전류효율은 도금용액의 $Cu^{2+}$ 농도가 0.3 M까지 높아짐에 따라 거의 100%까지 증가하는 경향을 나타내었다. $K_4P_2O_7$ 농도는 1.5~1.8 M 농도에서 전류효율의 감소를 나타내었으나, 0.9~1.3 M과 2.1~2.4 M에서는 거의 100%의 전류효율을 나타내었다. 첨가제의 농도 변화는 전류효율에는 거의 영향을 미치지 않았다. 전기도금 된 Cu 박막의 잔류응력은 도금용액의 $Cu^{2+}$ 농도가 0.15 M 이하에서는 약 20 MPa로 측정되었으나, $Cu^{2+}$ 농도가 증가함에 따라 증가하다가 0.25 M 에서 약 120 MPa의 최대치를 나타내었다. 한편 도금용액의 $K_4P_2O_7$ 농도가 0.9 M로부터 2.4M로 증가할수록 잔류 응력은 80MPa로부터 0 MPa까지 감소하는 경향을 나타내었으며, 첨가제의 농도는 잔류응력에 영향을 미치지 않은 것으로 관찰되었다. 표면형상의 경우 $Cu^{2+}$ 농도와 $K_4P_2O_7$ 농도는 상당한 영향을 미쳤으나, 첨가제는 약간의 영향만을 나타내었다. XRD 분석 결과 $Cu^{2+}$ 농도와 $K_4P_2O_7$ 농도는 Cu 박막의 미세조직에 상당한 영향을 미쳤으나, 첨가제는 거의 영향을 미치지 않는 것으로 나타났다. $Cu^{2+}$ 농도와 $K_4P_2O_7$ 농도가 증가할수록 (111) 피크의 강한 우선방향성이 나타내었다.

• 한국자기학회지
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• 제25권4호
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• pp.129-137
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• 2015

Cu(반경 $r_a$ = $95{\mu}m$)/$Ni_{80}Fe_{20}$(외경 $r_b$ = $120{\mu}m$)의 코어/쉘 복합 와이어를 전기도금방법으로 제작하였다. 제작 된 복합 와이어에 대해 원통 좌표계에서 임피던스 텐서의 두 대각 성분 $Z_{{\theta}{\theta}}$와 $Z_{zz}$를 10 kHz~10 MHz 범위의 주파수(f)와 0 Oe~200 Oe 범위의 외부 정지 자기장의 함수로 측정하였다. Maxwell 방정식으로부터 코어/쉘 복합 와이어의 두 대각 임피던스 $Z_{{\theta}{\theta}}$와 $Z_{zz}$를 각각 복소 투자율 텐서의 두 대각 성분 ${\mu}^*_{zz}$와 ${\mu}^*_{{\theta}{\theta}}$로 표현하는 식을 유도하였다. 유도된 식을 이용하여 측정된 $Z_{{\theta}{\theta}}$(f)와 $Z_{zz}$(f) 스펙트럼으로부터 ${\mu}^*_{zz}$(f)와 ${\mu}^*_{{\theta}{\theta}}$(f) 스펙트럼을 각각 뽑아낼 수 있었다. 뽑아낸 두 대각 투자율 스펙트럼을 자벽이동과 자화회전의 완화과정으로 해석하면 Cu/NiFe 코어/쉘 복합 와이어의 동적 자화과정을 규명하는 유용한 도구가 될 수 있다는 것을 제시하였다.

• 한국자기학회지
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• 제25권1호
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• pp.10-15
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• 2015

높은 전기전도도를 가진 비자성 금속 코어와 연자성 쉘을 가진 복합와이어의 자기임피던스를 원주방향 투자율로 표현하는 모델을 맥스웰 방정식으로부터 유도하였다. Cu(직경 $100{\mu}m$)/$Ni_{80}Fe_{20}$(두께 $15{\mu}m$) 코어/쉘 복합 와이어를 전기도금방법으로 제작하였다. 코어/쉘 복합 와이어의 길이방향으로 10 kHz에서 10 MHz 범위의 주파수를 가지는 교류전류와 0 Oe에서 200 Oe 범위의 직류 자기장을 가하여 임피던스 스펙트럼의 자기장 의존성을 측정하였다. 유도된 모델을 적용하여 측정된 임피던스 스펙트럼으로부터 원주방향 복소 투자율 스펙트럼을 뽑아내었다. 뽑아낸 원주방향 복소 투자율 스펙트럼은 단일 완화주파수의 Debye 식으로 매우 잘 곡선적합되는 완화형 분산을 보였다. 원주방향 복소 투자율 스펙트럼의 자기장 의존성을 분석하여, 본 코어/쉘 복합 와이어의 경우 길이 방향의 자기이방성을 가지며 원주방향으로의 자화회전이 완화형 복소 투자율 스펙트럼에 기여하는 단일 성분이라는 것을 규명하였다.

• 한국수소및신에너지학회논문집
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• 제17권4호
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• pp.448-453
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• 2006

Porous Co-P catalysts electroplated on Cu in chloride based solution with an addition of $NaH_2PO_2$ and glycine were developed for hydrogen generation from alkaline $NaBH_4$ solution. The microstructures of the Co-P catalysts and their hydrogen generation properties were analyzed as a function of cathodic current density and plating time during the electrodeposition. Amorphous Co-P electrodeposits with porous structure was formed on Cu at cathodic current density of $0.05\;A/cm^2$, and showed very high hydrogen generation rate in alkaline $NaBH_4$ solution due to an increase in the surface area of the catalyst as well as the catalytic activity. The Co-P catalyst, which was obtained at cathodic current density of $0.05\;A/cm^2$ for 5 min, exhibited the best hydrogen generation rate of 2290 ml/min.g-catalyst in 1 wt. % NaOH+10 wt. % $NaBH_4$ solution at $30^{\circ}C$.

• 마이크로전자및패키징학회지
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• 제13권4호
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• pp.45-50
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• 2006

3D package의 SiP에서 구리의 via filling은 매우 중요한 사항으로 package밀도가 높아짐에 따라 via의 크기가 줄어들며 전기도금법을 이용한 via filling이 연구되어왔다. Via filling시 via 내부에 결함이 발생하기 쉬운데 전해액 내에 억제제, 가속제등 첨가제를 첨가하고 펄스-역펄스(PRC)의 전류파형을 인가하여 결함이 없는 via의 filling이 가능하다. 본 연구에서는 건식 식각 방법 중 하나인 DRIE법을 이용하여 깊이 $100{\sim}190\;{\mu}m$, 직경이 각각 $50{\mu}m,\;20{\mu}m$인 2가지 형태의 via을 형성하였다. DRIE로 via가 형성된 Si wafer위에 IMP System으로 Cu의 Si으로 확산을 막기 위한 Ta층과 전해도금의 씨앗층인 Cu층을 형성하였다. Via시편은 직류, 펄스-역펄스의 전류 파형과 억제제, 가속제, 억제제의 첨가제를 모두 사용하여 filling을 시도하였고, 공정 후 via의 단면을 경면 가공하여 SEM으로 관찰하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.99.1-99.1
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• 2012

The thin-film photovoltaic absorbers (CdTe and $Cu(In,Ga)Se_2$) can achieve solar conversion efficiencies of up to 20% and are now commercially available, but the presence of toxic (Cd,Se) and expensive elemental components (In, Te) is a real issue as the demand for photovoltaics rapidly increases. To overcome these limitations, there has been substantial interest in developing viable alternative materials, such as $Cu_2ZnSnS_4$ (CZTS) is an emerging solar absorber that is structurally similar to CIGS, but contains only earth abundant, non-toxic elements and has a near optimal direct band gap energy of 1.4 - 1.6 eV and a large absorption coefficient of ~104 $cm^{-1}$. The CZTS absorber layers are grown and investigated by various fabrication methods, such as thermal evaporation, e-beam evaporation with a post sulfurization, sputtering, non-vacuum sol-gel, pulsed laser, spray-pyrolysis method and electrodeposition technique. In the present work, we report an alternative aqueous chemical approach based on chemical bath deposition (CBD) method for large area deposition of CZTS thin films. Samples produced by our method were analyzed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, absorbance and photoluminescence. The results show that this inexpensive and relatively benign process produces thin films of CZTS exhibiting uniform composition, kesterite crystal structure, and some factors like triethanolamine, ammonia, temperature which strongly affect on the morphology of CZTS film.