• 한국재료학회지
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• 제12권3호
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• pp.225-230
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• 2002

Sn was selected as an alloying element of Cu. The Cu-Sn thin layers were deposited on the Si substrates by the electroplating method and their properties were studied. By rapidly thermal annealing(RTA) up to 40$0^{\circ}C$ after electroplating, sheet resistance decreased and adhesion strength increased, but that trend was reversed at the 50$0^{\circ}C$ RTA. Cu-Sn particles grew dense and the surface was uniform up to 40$0^{\circ}C$, but at 50$0^{\circ}C$, empty area was introduced and the surface became rough owing to oxidation and particle coarsening and agglomeration. Deposited layer contained significant amount of Si, while pure Cu-Sn layer with the composition ratio of 90:10 was present only on the top surface. However, no significant change in the Cu composition within alloy layers occured by the RTA regardless of its temperature. This indicates that the Cu diffusion into the Si was suppressed by the presence of Sn.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 1994년도 특별강연 및 추계학술발표 개요집
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• pp.173-176
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• 1994

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.104-104
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• 1999

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.152-157
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• 2001

For the fabrication of YBa$_2$Cu$_3$O$_{x}$ thick film using diffusion process between $Y_3$BaCuO$_{5}$ and BaO+CuO, each material was selected as substrate and doping material. In this paper, we investigated the characteristic of YBa$_2$Cu$_3$O$_{x}$ thick film due to both addition of CeO$_2$into substrate and initial particle size of doping material. Through X-ray diffraction patterns and SEM photographs, the variation of composition and thickness of the formed phase was observed. It was from the experiment obtained that the addition of CeO$_2$into $Y_2$BaCuO$_{5}$ substrate and the initial particle size of doping material play important part in promoting the reaction between substrate and doping material.aterial.

• 한국재료학회지
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• 제13권5호
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• pp.338-342
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• 2003

Adhesion between Cu and low-k films has been investigated. Low-k films deposited using a mixture of hexamethyldisilane(HMDS) and Para-xylene had a dielectric constant as low as 2.7, showing the thermally stable properties up to $400^{\circ}C$. In this study, Ti glue layer, boron dopant, and $N_2$plasma treatment were used to improve adhesion property of between Cu and low-k films. Ti glue layer slightly improved adhesion property. After $N_2$plasma treatment, the adhesion property was significantly improved due to the increased roughness and the formation of new binding states between Ti and plasma-treated PPpX : HMDS. However, $300^{\circ}C$ annealing of $N_2$plasma treated sample caused the diffusion of Cu into the PPpX : HMDS, degrading the low-k properties. In the case of Cu(B)/Ti/PPpX : HMDS, the adhesion was remarkably increased. This enhanced adhesion was attributed to formation of Ti-boride at the Cu-Ti interface. It is because the formed Ti-boride prevented the diffusion of Cu into the PPpX : HMDS and the Cu-Ti reaction at the Ti interface.

• 한국진공학회지
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• 제5권2호
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• pp.147-155
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• 1996

Optical properties of $TiO_2/M/Ag/M/TiO_2$ films have been changed with the diffusion barrier metal M. Optimum opticla properties of $TiO_2/M/Ag/M/TiO_2$ as the transparent heat mirror film, could be obtained with Ti among diffusion barrier metals of Ti, Cu, Zr and Al. $TiO_2/M/Ag/M/TiO_2$ film, which was fabricated by sputtering of 18 nm-thick $TiO_2$ and Ag, and 4nm-thick Ti, showed maximum transimittance of 89% at visible wavelength and infrared reflectance of 97% at wavelength of 3000 nm. Optical properties of this film was not degraded by Xenon-sunshine weather test for 240 hours. For specimens with barrier layers of Cu, Zr, and Al, degradation of optical properties by weather test was increased in a sequence of films with Cu, Zr, and Al barrier layers.

• 한국세라믹학회지
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• 제33권6호
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• pp.718-724
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• 1996

Deformation mechanism map of Langdon-Mohammed type for YBa2Cu3O7-x superconducting ceramic was constructed by considering mechanisms of Nabarro-Herring Coble and powder-law creep and grain boundary sliding (GBS) with an accommodation by grain boundary diffusion. The map was found consistent with experi-mental results not only of the creep the also of the superplastic deformation. It showed the transition from interface reaction-controlled to the grain boundary diffusion-controlled GBS mechanism at about 1 ${\mu}{\textrm}{m}$ grain size and 100 MPa flow stress in agreement with the experimental results.

• E2M - 전기 전자와 첨단 소재
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• 제7권4호
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• pp.281-288
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• 1994

According to spread volume of B(BiPbCuO) layer, composition ratio and each stage of sintering process, we studied stability of high Tc superconductor phase and generation and growth movement of superconducting phase. The dual layer composed of SrCaCuO and BiPbCuO compound were prepared to develop the Bi-2223 superconductor[108K] through interaction and diffusion during sintering process. The dual layer samples were sintered at 830.deg. C for 0-210 hours. From the result, the optimum conditions were : spread volume(A:B=1:0.6), sintering time(210h) and composition ratio(A:S $r_{2}$C $a_{2}$C $u_{2}$- $O_{x}$, B:B $i_{1.9}$P $b_{0.5}$C $u_{3}$ $O_{y}$) at 830.deg. C.. C.C.C.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
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• pp.90-90
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• 1999

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 추계학술발표회
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• pp.164-164
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• 1996