Browse > Article
http://dx.doi.org/10.3740/MRSK.2003.13.5.338

Adhesion Property of Cu on Low-k : Ti Glue Layer, Boron Dopant, N2plasma effects  

Lee, Seob (School of Advanced Materials Engineering, Kookmin University)
Lee, Jae-gab (School of Advanced Materials Engineering, Kookmin University)
Publication Information
Korean Journal of Materials Research / v.13, no.5, 2003 , pp. 338-342 More about this Journal
Abstract
Adhesion between Cu and low-k films has been investigated. Low-k films deposited using a mixture of hexamethyldisilane(HMDS) and Para-xylene had a dielectric constant as low as 2.7, showing the thermally stable properties up to $400^{\circ}C$. In this study, Ti glue layer, boron dopant, and $N_2$plasma treatment were used to improve adhesion property of between Cu and low-k films. Ti glue layer slightly improved adhesion property. After $N_2$plasma treatment, the adhesion property was significantly improved due to the increased roughness and the formation of new binding states between Ti and plasma-treated PPpX : HMDS. However, $300^{\circ}C$ annealing of $N_2$plasma treated sample caused the diffusion of Cu into the PPpX : HMDS, degrading the low-k properties. In the case of Cu(B)/Ti/PPpX : HMDS, the adhesion was remarkably increased. This enhanced adhesion was attributed to formation of Ti-boride at the Cu-Ti interface. It is because the formed Ti-boride prevented the diffusion of Cu into the PPpX : HMDS and the Cu-Ti reaction at the Ti interface.
Keywords
Cu; low-k; Ti glue layer; boron; $N_2$plasma;
Citations & Related Records
연도 인용수 순위
  • Reference
1 S. P. Muraka, Solid State Technol., 39, 83 (1996)   DOI   ScienceOn
2 S. P. Jeng, R. H. Hanemann and M. C. Chang, Mater. Res. Soc. Symp. Proc., 337, 25 (1994)   DOI
3 N. Awaya and Y.Arita, J. Electron. Mater., 21, 959 (1992)   DOI
4 A. Jain, T. Kodas, R. Jairath and M. J. Hampden-Smith, J. Vac. Sci. Technol., B11, 2107 (1993)   DOI   ScienceOn
5 J. Lin and M. Chen, Jpn. J. Appl. Phys., 1, 38, 4863 (1999)   DOI
6 S. P. Muraka and S. Hymes, Crit. Rev, Solid State Mater. Sci., 20, 87 (1995)   DOI   ScienceOn
7 K. S. Kim, Y. C. Jang, H. J.Kim, Y. C. Quan J. Choi, D. Jung and N. E. Lee, Thin Solid Films, 377-378, 122 (2000)   DOI   ScienceOn
8 L. J. Gerenser, J. Adhes. Sci. Technol., A16, 155 (1998)
9 E. M. Liston, L. Martinue and M. R. Wertheimer, J. Adhes. Sci. Technol., 7, 1091 (1993)   DOI   ScienceOn