• Korean Journal of Metals and Materials
• /
• v.48 no.7
• /
• pp.667-673
• /
• 2010

Copper filling into TSV (through-silicon-via) and reduction of the filling time for the three dimensional chip stacking were investigated in this study. A Si wafer with straight vias - $30\;{\mu}m$ in diameter and $60\;{\mu}m$ in depth with $200\;{\mu}m$ pitch - where the vias were drilled by DRIE (Deep Reactive Ion Etching) process, was prepared as a substrate. $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to reduce the time required complete the Cu filling into the TSV, the PPR (periodic pulse reverse) wave current was applied to the cathode of a Si chip during electroplating, and the PR (pulse-reverse) wave current was also applied for a comparison. The experimental results showed 100% filling rate into the TSV in one hour was achieved by the PPR electroplating process. At the interface between the Cu filling and Ti/ Au functional layers, no defect, such as a void, was found. Meanwhile, the electroplating by the PR current showed maximum 43% filling ratio into the TSV in an hour. The applied PPR wave form was confirmed to be effective to fill the TSV in a short time.

• Journal of Surface Science and Engineering
• /
• v.51 no.6
• /
• pp.421-429
• /
• 2018

In this study, various electrochemical experiments were carried out to compare the corrosion characteristics of AA5052-O, AA5083-H321 and AA6061-T6 in seawater. The electrochemical impedance and potentiostatic polarization measurements showed that the corrosion resistance is decreased in the order of AA5052-O, AA5083-H321 and AA6061-T6, with AA5052-O being the highest resistant. This is closely associated with the property of passive film formed on three tested Al alloys. Based on the slope of Mott-Schottky plots of an n-type semiconductor, the density of oxygen vacancies in the passive film formed on the alloys was determined. This revealed that the defect density is increased in the order of AA5052-O, AA5083-H321 and AA6061-T6. Considering these facts, it is implied that the addition of Mg, Si, and Cu to the Al alloys can degrade the passivity, which is characterized by a passive film structure containing more defect sites, contributing to the decrease in corrosion resistance in seawater.

• Journal of Korean Academy of Oral and Maxillofacial Radiology
• /
• v.29 no.2
• /
• pp.423-433
• /
• 1999

Purpose : To assess the methods for the clinical evaluation of the longitudinal bone changes after implantation of tooth ash-plaster mixture into the defect area of human jaws. Materials and methods : Tooth ash-plaster mixtures were implanted into the defects of 8 human jaws. 48 intraoral radiograms taken with copper step wedge as reference at soon, 1st, 2nd, 4th, and 6th week after implantation of mixture were used. X-ray taking was standardized by using Rinn XCP device customized directly to the individual dentition with resin bite block. The images inputted by Quick scanner were digitized and analyzed by NIH image program. Cu­equivalent values were measured at the implanted sites from the periodic digital images. Analysis was performed by the bidirectional subtraction with color enhancement and the surface plot of resliced contiguous image. The obtained results by the two methods were compared with Cu­equivalent value changes. Results : The average determination coefficient of Cu-equivalent equations was 0.9988 and the coefficient of variation of measured Cu values ranged from 0.08~0.10. The coefficient of variation of Cu-equivalent values measured at the areas of the mixture and the bone by the conversion equation ranged from 0.06 ~0.09. The analyzed results by the bidirectional subtraction with color enhancement were coincident with the changes of Cu-equivalent values. The surface plot of the resliced contiguous image showed the three dimensional view of the longitudinal bone changes on one image and also coincident with Cu-equivalent value changes after implantation. Conclusion : The bidirectional subtraction with color enhancement and the surface plot of the resliced contiguous image was very effective and reasonable to analyze clinically and qualitatively the longitudinal bone change. These methods are expected to be applicable to the non-destructive test in other fields.

• 한국초전도학회:학술대회논문집
• /
• v.10
• /
• pp.45-50
• /
• 2000

We have investigated the influence of columnar defects (CD) on the vortex dynamics in pristine and iodine-intercalated Bi$_2$Sr$_2$CaCu$_2$O$_{8+{\delta}} single crystals from do SQUID magnetization measurements. Especially, the temperature dependence of the irreversibility fields, H$_{irr}$(T), were studied. Anisotropy ratio ${\gamma}$, estimated from the fitting to the 2-dimensional melting model (A. Schilling et al., Phys. Rev. Lett. 71 1899 (1993)) in higher fields than the matching field B$_{\phi}$ at low temperature region, turns out to be decreased by the iodine-intercalation and additionally by the heavy-ion irradiation.

• Korean Journal of Materials Research
• /
• v.14 no.6
• /
• pp.413-419
• /
• 2004

Recently, Silicon On Insulator (SOI) devices emerged to achieve better device characteristics such as higher operation speed, lower power consumption and latch-up immunity. Nevertheless, there are many detrimental defects in SOI wafers such as hydrofluoric-acid (HF)-defects, pinhole, islands, threading dislocations (TD), pyramid stacking faults (PSF), and surface roughness originating from quality of buried oxide film layer. Although the number of defects in SOI wafers has been greatly reduced over the past decade, the turn over of high-speed microprocessors using SOI wafers has been delayed because of unknown defects in SOI wafers. A new characterization method is proposed to investigate the crystalline quality, the buried oxide integrity and some electrical parameters of bonded SOI wafers. In this study, major surface defects in bonded SOI are reviewed using HF dipping, Secco etching, Cu-decoration followed by focused ion beam (FIB) and transmission electron microscope (TEM).

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.3
• /
• pp.151-155
• /
• 2015

We fabricated the Cu Schottky contact on an n-type Ge wafer and investigated the forward bias current-voltage (I-V) characteristics in the temperature range of 100~300 K. The zero bias barrier height and ideality factor were determined based on the thermionic emission (TE) model. The barrier height increased and the ideality factor decreased with increasing temperature. Such temperature dependence of the barrier height and the ideality factor was associated with spatially inhomogeneous Schottky barriers. A notable deviation from the theoretical Richardson constant (140.0 Acm^-2K^-2 for n-Ge) on the conventional Richardson plot was alleviated by using the modified Richardson plot, which yielded the Richardson constant of 392.5 Acm^-2K^-2. Finally, we applied the theory of space-charge-limitedcurrent (SCLC) transport to the high forward bias region to find the density of localized defect states (N_t), which was determined to be 1.46 × 10¹² eV^-1cm^-3.

• Journal of Welding and Joining
• /
• v.31 no.6
• /
• pp.58-64
• /
• 2013

Several joining methods involving resistance welding, laser welding, ultrasonic welding and mechanical joining are currently applied in manufacturing lithium-ion batteries. Cu and Al alloys are used for tab and bus bar materials, and laser welding characteristics for these alloys were investigated with similar and dissimilar material combinations in this study. The base materials used were Al 1050 and oxygen-free Cu 1020P alloys, and a disk laser was used with a continuous wave mode. In bead-on-plate welding of both alloys, the joint strength was higher than the strength of O tempered base material. In overlap welding, the effect of welding parameters on the tensile shear strength and bead shape was evaluated. Tensile shear strength of overlap welded joint was affected by interfacial bead width and weld defect formation. The tensile-shear specimen was fractured at the heat affected zone by selecting proper laser welding parameters.

• Korean Journal of Materials Research
• /
• v.20 no.8
• /
• pp.412-417
• /
• 2010

Mo thin films were used for the back electrode because of the low resistivity in the Mo/$CuInGaSe_2$ contact in chalcopyrite solar cells. $1\;{\mu}m$ thick Mo thin films were deposited on soda lime glass by varying the Ar pressure with the dc-magnetron sputtering process. The effects of the Ar pressure on the morphology of the Mo back electrode were studied and the relationships between the morphology and electro-optical properties, namely, the resistivity as well as the reflectance of the Mo thin films, were investigated. The resitivity increased from $24\;{\mu}{\Omega}{\cdot}cm$ to $11833\;{\mu}{\Omega}{\cdot}cm$; this was caused by the increased surface defect and low crystallinity as the Ar pressure increased from $3{\times}10^{-3}$ to $3{\times}10^{-2}\;Torr$. The surface morphologies of the Mo thin films changed from somewhat coarse fibrous structures to irregular and fine celled structures with increased surface cracks along the cell boundaries, as the Ar pressure increased from $3{\times}10^{-3}$ to $3{\times}10^{-2}\;Torr$. The changes of reflectances in the visible light range with Ar pressures were mainly attributed to the surface morphological changes of the Mo thin films. The reflectance in the visible light range showed the highest value of 45% at $3{\times}10^{-3}\;Torr$ and decreased to 18.5% at $3{\times}10^{-2}\;Torr$.

• The Journal of Korean Academy of Prosthodontics
• /
• v.50 no.3
• /
• pp.169-175
• /
• 2012

Purpose: In this study, brazing characteristics of $ZrO_2$ and Ti-6Al-4V brazed joints with increasing temperature were investigated. Materials and methods: The sample size of the $ZrO_2$ was $3mm{\times}3mm{\times}3mm$ (thickness), and Ti-6Al-4V was $10mm(diameter){\times}5mm(thickness)$. The filler metal consisted of Ag-Cu-Sn-Ti was prepared in powder form. The brazing sample was heated in a vacuum furnace under $5{\times}10^{-6}$ torr atmosphere, while the brazing temperature was changed from 700 to $800^{\circ}C$ for 30 min. Results: The experimental results shows that brazed joint of $ZrO_2$ and Ti-6Al-4V occurred at $700-800^{\circ}C$. Brazed joint consisted of Ag-rich matrix and Cu-rich phase. A Cu-Ti intermetallic compounds and a Ti-Sn-Cu-Ag alloy were produced along the Ti-6Al-4V bonded interface. Thickness of the reacted layer along the Ti-6Al-4V bonded interface was increased with brazing temperature. Defect ratios of $ZrO_2$ and Ti-6Al-4V bonded interfaces decreased with brazing temperature. Conclusion: Thickness and defect ratio of brazed joints were decreased with increasing temperature. Zirconia was not wetting with filler metal, because the reaction between $ZrO_2$ and Ti did not occur enough.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2009.05a
• /
• pp.239-241
• /
• 2009

DRIE(Deep Ion Reactive Etching) 공정은 실리콘 웨이퍼를 식각하는 기술로서 Si wafer 비아 홀 제조에 주로 사용되고 있다. 즉, DRIE 공정은 식각 및 보호층 증착을 반복함으로써 직진성 식각을 가능하게 하는 공정이다. 또한, 3차원 적층 실장에서 Si wafer 비아 홀에 결함없이 효과적으로 구리 충진을 하기 위해서는 직각형 via보다 경사벽을 가진 via가 형상적으로 유리하다. 본 연구에서는 3차원 적층을 위한 Si wafer 비아 홀의 결함 없는 효과적인 구리 충진을 위해, DRIE 공정을 이용하여 기존의 경사벽을 가지는 via 흘 형성 공정보다 더욱 효과적인 공정을 개발하였다.