• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 추계학술발표회
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• pp.87-87
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• 1997

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 춘계학술발표회
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• pp.108-108
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• 1997

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제10회 학술발표회 논문개요집
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• pp.42-42
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• 1996

• 한국광물학회지
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• 제11권1호
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• pp.32-44
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• 1998

The transformation sequence of kaolinite to mullite is examined with new electron diffraction data obtained mainly by an energy filtering transmission electron microscope. Kaolinite is transformed finally into mullite and cristobalite through several steps of continuous reactions by heating, which result in metakaolinite, microcrystalline spinel-type phase and amorphous silica. Metakaolinite maintains a short-range order in its structure ven at $920^{\circ}C$. Spinel phase results from a topotactictransformation of metakaolinite apart from the breakdown of metakaolinite structure. the first strong exothermic peak on DTA curve is mainly due to the extraction of amorphous silica from metakaolinite and the gradual nucleation of mullite. Metakaolinite decomposes around$ 940^{\circ}C$ to mullite that doesn't show a clear crystallographic relationship to the parent metakaolinite structure. However, spinel phase produced previously is maintained. The initially formed spinel and mullite phases are suggested to be Al-rich, but progressively gain Si in their structures at higher temperatures. Spinel phase decomposes completely through a second weak exothermic reaction promoting the growth of mullite, and crystallization of amorphous silica to cristobalite.

• 마이크로전자및패키징학회지
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• 제11권3호
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• pp.63-70
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• 2004

The structural, electrical properties of $(Ba, Sr)TiO_3[BSTO]/RuO_2$ thin films were examined by the addition of amorphous BSTO layer between crystlline BSTO film and $RuO_2$ substrate. We prepared BSTO films with double-layered structure, that is, amorphous layers deposited at $60^{\circ}C$ and crystalline films. Crystalline films were prepared at 550 on amorphous BSTO layer. The thickness of the amorphous layers was varied from 0 to 170 nm. During the deposition of crystalline films, the crystallization of the amorphous layers occurred and the structure was changed to circular while crystalline BSTO films showed columnar structure. Due to insufficient annealing effect, amorphous BSTO phase was observed when the thickness of the amorphous layers exceeded 30 nm. Amorphous BSTO layer could also prevent the formation of oxygen deficient region in $RuO_2$ surface. Leakage current of total BSTO films decreased with increasing amorphous layer thickness due to structural modifications. Dielectric constant showed maxi-mum value of 343 when amorphous layer thickness was 30 nm at which the improvement by grain growth and the degradation by amorphous phase were balanced.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2008년도 추계학술대회 논문집
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• pp.215-217
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• 2008

Crystallization behavior of the bulk metallic glass (BMG) during compression and tension was studied in the supercooled liquid region (SLR). Rod samples of the BMG alloy were produced by consolidating gas atomized powders of $Cu_{54}Zr_{22}Ti_{18}Ni_6$ using spark plasma sintering. The crystallization behavior in these samples was examined by tackling changes in thermal property during heating the samples in DSC. The present BMG alloy was firstly decomposed and then crystallized during annealing in the SLR. The phase decomposition from the original amorphous phase was retarded by the compressive stress, while it was accelerated by the tensile stress.

• 한국광물학회지
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• 제25권4호
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• pp.283-293
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• 2012

지구가 마그마 바다 상태에서 현재의 층상화된 내부 구조로 분화되는 진화과정의 체계적인 이해를 위하여 규산염 용융체와 같은 비정질 산화물의 결정화과정 메커니즘 규명이 필요하다. 이를 위하여 결정화 과정에서 수반하는 용융체의 원자구조 변화를 실험적으로 측정하여 결정화 과정을 정량적으로 정립할 수 있다. 본 연구에서는 고상 핵자기 공명 분광분석(NMR)을 이용하여 졸겔법으로 합성한 비정질 알루미나($Al_2O_3$)의 온도-가열 시간 변화에 따른 원자구조 변화로부터, 비정질-결정질 상전이 과정을 원자 단위에서 규명하였다. 비정질 $Al_2O_3$의 $^{27}Al$ 3QMAS NMR 실험 결과 다량의 배위수 4, 5의 알루미늄($^{[4,5]}Al$)과 소량의 배위수 6인 알루미늄($^{[6]}Al$)이 명확히 구분되어 관찰되었고, 973 K와 1,073 K에서 각각 가열시간을 증가시킬수록 배위수 5인 알루미늄($^{[5]}Al$)이 감소하였다. 본 연구에서는 $^{[5]}Al$의 분율을 결정화의 지표로 이용하여 $^{27}Al$ 3QMAS NMR 결과를 정량 분석하였다. 분석을 통해 점진적인 원자구조의 변화로 관찰되는 비정질 산화물의 상전이 과정이 결정화 혹은 비정질 내 구조적 무질서도의 변화와 같은 복합적인 단계로 구성될 수 있음을 확인하였다. 이러한 연구 결과는 다양한 자연계의 다성분계 규산염 용융체 결정화 과정 및 마그마 바다의 분화와 지구의 화학적 진화에 대한 원자 단위의 이해증진에 도움을 줄 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.69-69
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• 2009

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sh-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sh-doped Ge-Se-Te thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.129-130
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• 2008

Polycrystalline silicon (poly-Si) Schottky barrier thin film transistors (SB-TFT) are fabricated by erbium silicided source/drain for n-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method. The fabricated poly-Si SB-TFTs have a large on/off current ratio with a low leakage current. Moreover, the electrical characteristics of poly-Si SB TFTs are significantly improved by the additional forming gas annealing in 2 % $H_2/N_2$, because the interface trap states at the poly-Si grain boundaries and at the gate oxide/poly-Si channel decreased.

• 대한기계학회논문집B
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• 제35권3호
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• pp.221-228
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• 2011

대면적 비정질 실리콘 박막의 결정화는 평판 디스플레이 생산에 있어서 핵심 요소로 꼽힌다. 현재 다양한 결정화 기술들이 연구 되고 있으며 그 중 최근에 소개된 줄 가열 유도 결정화는 수십 마이크로초의 짧은 공정 시간, 대면적 결정화 그리고 국부적인 가열로 기판의 열변형 억제 등의 잇점으로 인해 AMOLED 제작에 있어서 기대되는 기술이다. 본 연구에서는 JIC 공정 중 상변화과정에서의 온도를 이론적으로 해석하고 이를 실험과 비교하였다. 이를 통하여 결정화 메커니즘을 결정하는 임계온도를 in-situ 실험과 수치해석을 통해 밝혀내었다.