• 한국전기전자재료학회논문지
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• 제30권5호
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• pp.301-306
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• 2017

Wire electrical discharge machining (WEDM) process was evaluated to slice Silicon (Si) for various applications. Specifically, various Si workpieces with various resistances, such as single and multi crystalline Si bricks and wafers were used. As conventional slicing processes, such as slurry-on or diamond-on wire slicing, are based on mechanical abrasions between Si and abrasive, there is a limitation to decrease the wafer thickness as well as kerf-loss. Especially, when the wafer thickness is less than $150{\mu}m$, wafer breakage increases dramatically during the slicing process. Single crystalline P-type Si bricks and wafers were successively sliced with considerable slicing speed regardless of its growth direction. Also, typical defects, such as microcracks, craters, microholes, and debris, were introduced when Si was sliced by electrical discharge. Also, it was found that defect type is also dependent on resistance of Si. Consequently, this study confirmed the feasibility of slicing single crystalline Si by WEDM.

• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.61-67
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• 2014

Micro-cracks in crystalline silicon wafer often result in wafer breakage in solar wafer manufacturing, and also their existence may lead to electrical failure in post fabrication inspection. Therefore, the reliable detection of micro-cracks is of importance in the photovoltaic industry. In this paper, an experimental method to select optimal parameters in anisotropic diffusion filter is proposed. It can reliably detect micro-cracks by the distinct extension of boundary as well as noise reduction in near-infrared image patterns of micro-cracks. Its performance is verified by experiments of several type cracks machined.

• Current Photovoltaic Research
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• 제5권1호
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• pp.25-27
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• 2017

Nanoscale textured black silicon has attracted intensive attention due to its great potential as applications in multicrystalline silicon-based solar cells. It absorbs sunlight over a broad range of wavelengths but introduces large recombination centers, non-uniform doping into cell. In this study, we present a metal-assisted chemical etching technique plus alkaline etching process to fabricate nanoscale pyramid structures with optimized condition. To make the structures, silver nanoparticles-loaded mc-Si wafer was submerged into $H_2O_2/HF$ solution first for nanohole texturing the wafer and textured wafer etched again with KOH solution for making nanoscale pyramid structures. The average reflectivity (350-1050 nm) is about 8.42% with anti-reflection coating.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.172-175
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• 2009

n-type crystalline silicon wafers were passivated with intrinsic a-Si:H thin films on both sides using HWCVD. Minority carrier lifetime measurement was used to verify interface passivation properties between a-Si:H thin film and crystalline Si wafer. Thin film interface characteristics were investigated depending on $H_2/SiH_4$ ratio and hot wire deposition temperature. Vacuum annealing were processed after deposition a-Si:H thin films on both sides to investigate thermal effects from post process steps. We noticed the effect of interface passivation properties according to $H_2/SiH_4$ ratio and hot wire deposition temperature, and we had maximum point of minority carrier lifetime at H2/SiH4 10 ratio and $1600^{\circ}C$ wire temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1054-1056
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• 2002

High temperature Kermal diffusion from $POCl_3$ source usually used for conventional process through put of a cell manufacturing line and potentially reduce cell efficiency through bulk like time degradation. To fabricate high efficiency solar cells with minimal thermal processing, spin-on-doping(SOD) technique can be employed to emitter diffusion of a silicon solar cell. A technique is presented to emitter doping of a mono-crystalline solar cell using spin-on doping (SOD). Moreover it is shown that the sheet resistance variation with RTA temperature and time fer mono-crystalline and multi-crystalline silicon samples. This novel SOD technique was successfully used to produces 11.3% efficiency l04mm by 104mm size mono-crystalline silicon solar cells.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 추계학술발표대회 논문집
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• pp.367-370
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• 2009

It is important to reduce a reflection of light as a solar cell is device that directly converts the energy of solar radiation to electrical energy in oder to improve efficiency of solar cells. The antireflection coating has proven effective in providing substantial increase in solar cell efficiency. This paper investigates the formation of thin film PSi(porous silicon) layer on the surface of crystalline silicon substrates without other ARC(antirefiection coating) layers. On the other hand the formation of $SO_{2}/SiN_x$ ARC layers on the surface of crystalline silicon substrates. After that, the structure of PSi and $SO_2/SiN_x$ ARC was investigated by SEM and reflectance. The formation of PSi layer and $SO_{2}/SiN_x$ ARC layers on the textured silicon wafer result about 5% in the wavelength region from 0.4 to $1.0{\mu}m$. It is achieved on the textured crystalline silicon solar cell that each efficiency is 14.43%, 16.01%.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.245-248
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• 2011

Many researches have been carried out to improve light absorption in the crystalline silicon solar cell fabrication. The rear reflection is applied to increase the path length of light, resulting in the light absorption enhancement and thus the efficiency improvement mainly due to increase in short circuit current. In this paper, we manufactured the silicon solar cell using the mono crystalline silicon wafers with $156{\times}156mm^2$, 0.5~3.0 ${\Omega}{\cdot}cm$ of resistivity and p-type. After saw damage removal, the dielectric film ($SiN_x$)on the back surface was deposited, followed by surface texturing in the KOH solution. It resulted in single-side texturing wafer. Then the dielectric film was removed in the HF solution. The silicon wafers were doped with phosphorus by $POCl_3$ with the sheet resistance 50 ${\Omega}/{\Box}$ and then the silicon nitride was deposited on the front surface by the PECVD with 80nm thickness. The electrodes were formed by screen-printing with Ag and Al paste for front and back surface, respectively. The reflectance and transmittance for the single-sided and double-sided textured wafers were compared. The double-sided textured wafer showed higher reflectance and lower transmittance at the long wavelength region, compared to single-sided. The completed crystalline silicon solar cells with different back surface texture showed the conversion efficiency of 17.4% for the single sided and 17.3% for the double sided. The efficiency improvement with single-sided textured solar cell resulted from reflectance increase on back surface and light absorption enhancement.

• 한국재료학회지
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• 제20권12호
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• pp.649-653
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• 2010

In this paper, double texturization of multi crystalline silicon solar cells was studied with laser and reactive ion etching (RIE). In the case of multi crystalline silicon wafers, chemical etching has problems in producing a uniform surface texture. Thus various etching methods such as laser and dry texturization have been studied for multi crystalline silicon wafers. In this study, laser texturization with an Nd:$YVO_4$ green laser was performed first to get the proper hole spacing and $300{\mu}m$ was found to be the most proper value. Laser texturization on crystalline silicon wafers was followed by damage removal in acid solution and RIE to achieve double texturization. This study showed that double texturization on multi crystalline silicon wafers with laser firing and RIE resulted in lower reflectance, higher quantum yield and better efficiency than that process without RIE. However, RIE formed sharp structures on the silicon wafer surfaces, which resulted in 0.8% decrease of fill factor at solar cell characterization. While chemical etching makes it difficult to obtain a uniform surface texture for multi crystalline silicon solar cells, the process of double texturization with laser and RIE yields a uniform surface structure, diminished reflectance, and improved efficiency. This finding lays the foundation for the study of low-cost, high efficiency multi crystalline silicon solar cells.

• 신재생에너지
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• 제5권1호
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• pp.26-31
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• 2009

The surface etching characteristics of single crystalline silicon wafer were investigated using potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH). The saw damage layer was removed after 10min by KOH 45wt% solution at $80^{\circ}C$. The wafer etched at high temperature ($90^{\circ}C$) and in low concentration (4wt%) of TMAH solution showed an increased etch rate of silicon wafer and wavy patterns on the surface. Especially, pyramidal textures were formed in 4wt% TMAH solution without alcohol additives.

• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.21-25
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• 2014

The texturing is one of the most important processes for high efficiency crystalline silicon solar cells. The rear side flatness of silicon solar cell is very important for increasing the light reflectance and forming uniform back surface field(BSF) region in manufacturing high efficiency crystalline silicon solar cells. We investigated texturing difference between front and rear side of wafer by texturing of two adhered wafers. As a result, the flatter rear side was obtained by forming less pyramid size compared to the front side and improved reflectance of long wavelength and back surface field(BSF) region were also achieved. Therefore, the texturing of two adhered wafers can be expected to improve the efficiency of silicon solar cells due to increased short circuit current(Isc).