한국신재생에너지학회:학술대회논문집

Korean Society for New and Renewable Energy (한국신·재생에너지학회)
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Interface Passivation Properties of Crystalline Silicon Wafer Using Hydrogenated Amorphous Silicon Thin Film by Hot-Wire CVD

열선 CVD법으로 증착된 비정질 실리콘 박막과 결정질 실리콘 기판 계면의 passivation 특성 분석

  • 김찬석 (한국에너지기술연구원 태양광연구단) ;
  • 정대영 (한국에너지기술연구원 태양광연구단) ;
  • 송준용 (한국에너지기술연구원 태양광연구단) ;
  • 박상현 (한국에너지기술연구원 태양광연구단) ;
  • 조준식 (한국에너지기술연구원 태양광연구단) ;
  • 윤경훈 (한국에너지기술연구원 태양광연구단) ;
  • 송진수 (한국에너지기술연구원 태양광연구단) ;
  • 김동환 (고려대학교 신소재공학과) ;
  • 이준신 (성균관대학교 전자통신공학부) ;
  • 이정철 (한국에너지기술연구원 태양광연구단)
  • Published : 2009.06.25
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Abstract

n-type crystalline silicon wafers were passivated with intrinsic a-Si:H thin films on both sides using HWCVD. Minority carrier lifetime measurement was used to verify interface passivation properties between a-Si:H thin film and crystalline Si wafer. Thin film interface characteristics were investigated depending on $H_2/SiH_4$ ratio and hot wire deposition temperature. Vacuum annealing were processed after deposition a-Si:H thin films on both sides to investigate thermal effects from post process steps. We noticed the effect of interface passivation properties according to $H_2/SiH_4$ ratio and hot wire deposition temperature, and we had maximum point of minority carrier lifetime at H2/SiH4 10 ratio and $1600^{\circ}C$ wire temperature.

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