• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.52.2-52.2
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• 2009

Si 박막형 solar cell은 Si 결정형 solar cell대비 cost 및 대면적화 측면에서 장점을 가지고 있다. 그러나 amorphous Si의 경우 light soacking에 의한 열화 문제가 있고, microcrystalline Si의 경우 요구되는 효율 확보를 위하여 $1.5{\mu}m$ 이상 두께가 필요하며, 증착율이 $5{\AA}/sec$.이하인 단점이 있다. 본 연구에서는 high deposition rate로 microcrystalline Si를 증착하기 위하여 high frequency, high power PECVD를 이용하였으며, RF power, 증착온도, H2/SiH4 ratio의 3인자를 3수준으로 변화시킨 완전요인배치 실험을 실시하였다. 실험결과 증착율은 $8.0{\AA}/sec.{\sim}52.8{\AA}/sec$ 범위, crystalline fraction은 0%~83.3% 범위의 결과를 얻었으며, 결정이 형성된 조건에서는 XRD분석결과 $2\theta=28.5$ 및 47.5에서 Si (111), (220) peak을 확인할 수 있었다. Surface Profilometer 를 이용한 surface roughness의 경우 $6.3{\AA}\sim32.4{\AA}$ 범위의 결과를 얻었으며, crystalline Portion이 높을수록 surface roughness가 증가함을 알 수 있었다.

• 한국태양에너지학회 논문집
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• 제30권6호
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• pp.16-21
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• 2010

It is well-known that Boron-doped Cz Si solar cells suffer light-induced degradation due to boron-oxygen defect which is responsible of a reduction in lifetime and hence efficiency. In this paper, we assume that PV solar cell has been connected with variable load to account the real operating condition and it shows different light-induced degradation of Si solar cell. To evaluate the effect of light-induced degradation for solar cell with various load, Single crystalline solar cells are connected with open and short circuits during light exposure. Isc-Voc curve evaluate light induced degradation of solar cells and the reason is explained as a change for serial resistance. From the results, Electrical characteristics of solar cells show better performance under short circuit conditions, after light exposure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.219-219
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• 2010

Silicides have been commonly used in the Si technology due to the compatibility with Si. Recently the silicide has been applied in solar cells [1] and nanoscale interconnects [2]. The modulation of Ni silicide phase is an important issue to satisfy the needs. The excellent electric-conductive nickel monosilicide (NiSi) nanowire has proven the low resistive nanoscale interconnects. Otherwise the Ni disilicide (NiSi2) provides a template to grow a crystalline Si film above it by the little lattice mismatch of 0.4% between Si and NiSi2. We present the formation of Ni silicide phases performed by the single deposition and the co-deposition methods. The co-deposition of Ni and Si provides a stable Ni silicide phase at a reduced processing temperature comparing to the single deposition method. It also discusses the Schottky contact formation between the Ni silicide and the grown crystalline Si film for the solar cell application.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.243-247
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• 2012

The paper focuses on an anti-reflection (AR) coating deposited by PECVD in silicon solar cell fabrication. AR coating is effective to reduce the reflection of the light on the silicon wafer surface and then increase substantially the solar cell conversion efficiency. In this work, we carried out experiments to optimize double AR coating layer with silicon nitride and silicon oxide for the silicon solar cells. The p-type mono crystalline silicon wafers with $156{\times}156mm^2$ area, 0.5-3 ${\Omega}{\cdot}cm$ resistivity, and $200{\mu}m$ thickness were used. All wafers were textured in KOH solution, doped with $POCl_3$ and removed PSG before ARC process. The optimized thickness of each ARC layer was calculated by theoretical equation. For the double layer of AR coating, silicon nitride layer was deposited first using $SiH_4$ and $NH_3$, and then silicon oxide using $SiH_4$ and $N_2O$. As a result, reflectance of $SiO_2/SiN_x$ layer was lower than single $SiN_x$ and then it resulted in increase of short-circuit current and conversion efficiency. It indicates that the double AR coating layer is necessary to obtain the high efficiency solar cell with PECVD already used in commercial line.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.321-326
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• 2016

Minimizing the carrier recombination and electrical loss through surface passivation is required for high efficiency c-Si solar cell. Usually, $SiN_X$, $SiO_X$, $SiON_X$ and $AlO_X$ layers are used as passivation layer in solar cell application. Silicon oxide layer is one of the good passivation layer in Si based solar cell application. It has good selective carrier, low interface state density, good thermal stability and tunneling effect. Recently tunneling based passivation layer is used for high efficiency Si solar cell such as HIT, TOPCon and TRIEX structure. In this paper, we focused on silicon oxide grown by various the method (thermal, wet-chemical, plasma) and passivation effect in c-Si solar cell.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.128.1-128.1
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• 2011

In amorphous silicon and crystalline silicon(a-Si:H/c-Si) heterojuction solar cells, intrinsic hydrogenated amorphous silicon(a-Si:H) films play an important role to passivate the crystalline silicon wafer surfaces. We have studied the correlation between the surface passivation quality and nature of the Si-H bonding at the a-Si:H/c-Si interface. The samples were obtained by VHF-CVD under different deposition conditions. The passivation quality and analysis of all structures studied was performed by means of quasi steady state photoconductance(QSSPC) methods and fourier transform infrared spectrometer(FTIR) measurements respectively.

• 반도체디스플레이기술학회지
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• 제15권4호
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• pp.67-72
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• 2016

In this study, the texturing and the emitter formation processes were carried out with the wafer adhesion method to increase the productivity and reduce the production cost of the multi-crystalline silicon solar cell. After fabricating $156{\times}156mm$ solar cell according to the wafer adhesion method, the operation characteristics were analyzed and compared with those of the solar cell fabricated by the standard process method. In the case of a solar cell formed by the wafer adhesion method, it showed Jsc of $32.87mA/cm^2$, Voc of 0.612V, FF of 78.04% and efficiency of 15.71% respectively. The efficiency of the solar cell formed by the wafer adhesion method was 0.1% higher than that of the solar cell formed by the standard method. In addition, the productivity of the texturing and the emitter formation processes is expected to be approximately doubled. Therefore, it is expected that the manufacturing cost of the multi-crystalline solar cell can be reduced due to the improved productivity compared with the standard process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.419-420
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• 2009

The authors fabricated the nanostructural patterns on the surface of SiN antireflection layer of polycrystalline Si solar cell and the surface of crystalline Si wafer using anodic aluminum oxide (AAO) masks in an inductively coupled plasma(ICP) etching process. The AAO nanopattern mask has the hole size of about 70~80nm and an ave rage lattice constant of 100nm. The transferred nano-patterns were observed by the scanning electron microscope (SEM) and the enhancement of solar cell efficiency will be presented.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.43.1-43.1
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• 2010

In the crystalline silicon solar cells, the full area aluminum_back surface field(BSF) is routinely achieved through the screen-printing of aluminum paste and rapid firing. It is widely used in the industrial solar cell because of the simple and cost-effective process to suppress the overall recombination at the back surface. However, it still has limitations such as the relatively higher recombination rate and the low-to-moderate reflectance. In addition, it is difficult to apply it to thinner substrate due to wafer bowing. In the recent years, the dielectric back-passivated cell with local back contacts has been developed and implemented to overcome its disadvantages. Although it is successful to gain a lower value of surface recombination velocity(SRV), the series resistance($R_{series}$) becomes even more important than the conventional solar cell. That is, it is a trade off relationship between the SRV and the $R_{series}$ as a function of the contact size, the contact spacing and the geometry of the opening. Therefore it is essential to find the best compromise between them for the high efficiency solar cell. We have investigated the optimal design for the local back contact by using PC1D simulation.

• 한국재료학회지
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• 제18권11호
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• pp.571-576
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• 2008

The simulation program for solar cells, PC1D, was briefly reviewed and the device modeling of a multicrystalline Si solar cell using the program was carried out to understand the internal operating principles. The effects of design parameters on the light absorption and the quantum efficiency were investigated and strategies to reduce carrier recombination, such as back surface field and surface passivation, were also characterized with the numerical simulation. In every step of the process, efficiency improvements for the key performance characteristics of the model device were determined and compared with the properties of the solar cell, whose efficiency (20.3%) has been confirmed as the highest in multicrystalline Si devices. In this simulation work, it was found that the conversion efficiency of the prototype model (13.6%) can be increased up to 20.7% after the optimization of design parameters.