• Title/Summary/Keyword: Crystal shape

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Fabrication of$Al_2O_3/Fe$ composite by reaction sintering (반응소결법에 의한 $Al_2O_3/Fe$ 복합재료 제조)

  • 김송희;윤여범
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.2
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    • pp.185-190
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    • 1999
  • An $Al_2O_3/Fe$ composite was synthesized through the double stage processes by a reaction sintering which requires simple process and equipments but provides near-net-shape, a reduction/oxidation process for 5 hrs at $650^{\circ}C$ was followed by sintering at $1200^{\circ}C$ to form an $Al_2O_3/Fe$ composite. The composite processed through the double stage sintering are mainly consists of $\alpha$-Fe and ${\alpha}Al_2O_3$ with minor amount of $FeAl_2O_4$, a spinnel structure which is known to prevent Fe from filling up the pores and good contact with $Al_2O_3/Fe$ particles.

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Effects of elastic strain on the agglomeration of silicide films for electrical contacts in integrated circuit applications

  • Choy, J.H.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.3
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    • pp.95-100
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    • 2004
  • This paper reports a potential problem in the electrical performance of the silicide film to silicon contacts with respect to the scaling trend in integrated circuit (IC) devices. The effects of elastic strain on the agglomeration of the coherent silicide film embedded in an infinite matrix are studied employing continuum linear elasticity and finite-difference numerical method. The interface atomic diffusion is taken to be the dominant transport mechanism where both capillarity and elastic strain are considered for the driving forces. Under plane strain condition with elastically homogeneous and anisotropic system with cubic symmetry, the dilatational misfit and the tetragonal misfit in the direction parallel to the film thickness are considered. The numerical results on the shape evolution agree with the known trend that the equilibrium aspect ratio of the film increases with the elastic strain intensity. When the elastic strain intensity is taken to be only a function of the film size, the flat film morphology with a large aspect ratio becomes increasingly unstable since the equilibrium aspect ratio decreases, as the film scales. The shape evolution results in a large decrease in contact to silicon area, and may deteriorate the electrical performances.

Multi-scale simulation of drying process for porous materials using molecular dynamics (part 1 : homogenization method) (분자동역학을 이용한 다공성 물질 건조공정 멀티스케일 시뮬레이션(1부 : 균질화법 해석))

  • 오진원;백성민;금영탁
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.3
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    • pp.115-122
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    • 2004
  • When porous materials are dried, the particles flocculate into fish-net structure in gel phase. In order to exactly analyze the stress distribution of porous materials during drying process, the elastic tensor of microscopic gel structures has to be predicted considering pore shapes as well as porosities of porous materials. The elastic characteristics of porous materials associated with porosities were predicted analyzing microscopic gel structures with circular and cross pores via homogenization method and the drying processes of the electric porous ceramic insulator were simulated using finite element method (FEM). Comparing analysis results between consideration and negligence of pores, the deformed shape and distributions of temperature and moisture were similar but the residual stress was significantly different.

A Theoretical Study of GaAs Nucleation in GaAs/Si Heteroepitaxy Structure (GaAs/Si Heteroepitaxy 구조에서 GaAs의 초기 핵생성에 관한 이론적 고찰)

  • 최덕균
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.1 no.1
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    • pp.51-59
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    • 1991
  • Early stage of GaAs nucleation on Si substrate was theoretically studied by computer simulation. Compared to the constant ledge interaction energy in conventional nucleation theory, functional behavior of ledge-ledge interaction resulted in small size clusters depending on the cluster size and shape. Among various kinds of clusters, the multilayer pyramidal shape GaAs cluster requires smallest excess free energy due to the formation of Ga(111) facet planes. There this result suggests that the defects involved in GaAs/Si are originated from the early stage nucleation.

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Investigation of the Polarity in GaN Grown by HVPE (HVPE법으로 성장시킨 GaN의 극성 분석)

  • 정회구;정수진
    • Korean Journal of Crystallography
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    • v.14 no.2
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    • pp.93-104
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    • 2003
  • The crystals of group-Ⅲ nitride semiconductors with wurtzite structure exhibit a strong polarity. Especially, GaN has characteristics of different growth rate, anisotropic electrical and optical properties due to the polarity. In this work, GaN epilayer was grown and the polarities of the crystals were observed by the chemical wet etching and SP-EFM. GaN thin films were deposited on c-plane A1₂O₃ substrate under the variations of growth conditions by HVPE such as the deposition temperature of the buffer layer, the deposition time, the ratio of Group-V and Ⅲ and the deposition temperature of the film. The adquate results were obtained under the conditions of 500℃, 90 seconds, 1333 and 1080℃, respectively. It is observed that the GaN layer grown without the buffer layer has N-polarity and the GaN layer grown on the buffer layer has Ga-polarity. Fine crystal single particles were grown on c-plane A1₂O₃ and SiO₂, layer. The external shape of the crystal shows {10-11}{10-10}(000-1) planes as expected in the PBC theory and anisotropic behavior along c-axis is obvious. As a result of etching on each plane, (000-1) and {10-11}planes were etched strongly due to the N-polarity and {10-10} plane was not affected due to the non-polarity. In the case of the crystal grown on c-plane A1₂O₃, two types of crystals were grown. They were hexagonal pyramidal-shape with {10-11}plane and hexagonal prism with basal plane. The latter might be grown by twin plane reentrant edge (TPRE) growth.

Modelling of ZMR process for fabrication of SOI (SOI소자 제죠를 위한 ZMR공정의 모델링)

  • 왕종회;김도현
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.5 no.2
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    • pp.100-108
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    • 1995
  • Heat transfer plays a critical role in determining interface location and shape in ZMR process, which is used for the fabrication of silicon - on - insulator structure. In this work, the two - dimensional pseudo - steady - state ZMR model has been developed that can simulate the heat transfer process during ZMR process. It contains the radiation, convection and conduction heat transfer and determines the interface shapes. Numerical solutions from the model include flow field in the molten zone, temperature field in the full SOl structure and the location of solid/liquid interface in the silicon thin film and silicon substrate. We examined the effects of the various system parameters on the temperature profiles and the interface shape.

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Morphology of the Dart and the Dart Sac in the Land Snail Nesiohelix samarangae

  • Byun, In-Seon;Jo, Yong-Hun;Lee , Yong-Seok;Jeong, Kye-Heon
    • The Korean Journal of Malacology
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    • v.20 no.1
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    • pp.1-6
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    • 2004
  • An anatomical and ultrastructural study on the dart sac and the dart of a Korean snail Nesiohelix samarangae was conducted to understand their morphological characteristics with the help of the light microscope and electron microscopes, TEM and SEM. Nesiolelix samarangae had two darts which are pure white structures 6-8 mm in length, tapering from 0.6-0.8 mm to 0.15-0.3 mm. The dart sac had a long conic lumen subdivided into two by a septal wall, and the darts were centrally embedded in the thick muscular layers of the sac. The darts occupied each of the two luminal spaces one per each. The convexed surfaces of the darts had many crystal buds in the shape of the petals. Otherwise, the convexed surfaces of the darts had numerous crystal buds in the shape of candle or topaz. The luminal surface of the dart sac was covered with a single columnar epithelium. The epithelial cells possessed microvilli on their free surface.

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The chemical composition and shape of inclusion of amethyst (자수정 내포물의 형상과 화학조성에 관한 연구)

  • Yoon, Si-Nae;Song, Young-Jun;Yon, Seog-Joo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.5
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    • pp.207-215
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    • 2010
  • This study was carried out for the purpose of obtaining the basic data for identifying the origin of amethyst. For this, the three dimensional shapes of inclusions contained in various amethyst were observed with Stereo Zoom microscope. The shape and chemical composition of cross section of solid inclusion and the chemical composition of evaporite were investigated by SEM-EDS. The evaporite is made from evaporating of liquid inclusion which is flowed out of amethyst sample by decompressing. Lastly, The trace mineral composition of amethyst was investigated by ICP-AES after digesting the amethyst sample with HF-$H_2SO_4$ solution.

Density-based Topology Design Optimization of Piezoelectric Crystal Resonators (압전 수정진동자의 밀도법 기반 위상 최적설계)

  • Ha, Youn Doh;Byun, Taeuk;Cho, Seonho
    • Journal of the Computational Structural Engineering Institute of Korea
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    • v.27 no.2
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    • pp.63-70
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    • 2014
  • Design sensitivity analysis and topology design optimization for a piezoelectric crystal resonator are developed. The piezoelectric crystal resonator is deformed mechanically when subjected to electric charge on the electrodes, or vice versa. The Mindlin plate theory with higher-order interpolations along thickness direction is employed for analyzing the thickness-shear vibrations of the crystal resonator. Thin electrode plates are masked on the top and bottom layers of the crystal plate in order to enforce to vibrate it or detect electric signals. Although the electrode is very thin, its weight and shape could change the performance of the resonators. Thus, the design variables are the bulk material densities corresponding to the mass of masking electrode plates. An optimization problem is formulated to find the optimal topology of electrodes, maximizing the thickness-shear contribution of strain energy at the desired motion and restricting the allowable volume and area of masking plates. The necessary design gradients for the thickness-shear frequency(eigenvalue) and the corresponding mode shape(eigenvector) are computed very efficiently and accurately using the analytical design sensitivity analysis method using the eigenvector expansion concept. Through some demonstrative numerical examples, the design sensitivity analysis method is verified to be very efficient and accurate by comparing with the finite difference method. It is also observed that the optimal electrode design yields an improved mode shape and thickness-shear energy.

Liquid Crystal Droplet Patterns to Monitor Catalase Activity at Femtomolar Levels

  • Yoon, Stephanie;Jang, Chang-Hyun
    • Bulletin of the Korean Chemical Society
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    • v.35 no.9
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    • pp.2704-2710
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    • 2014
  • Catalase (CAT) decomposes hydrogen peroxide that is toxic to the body. In this study, simple and sensitive detector has been developed for observing catalase activity using liquid crystal droplet system. Microscale LC droplet patterns are formed by spreading aldehyde-doped nematic liquid crystal on pre-treated glass slides. When hydrogen peroxide is added, aldehyde is oxidized and amphiphiles are formed. Dodecanoates cause the pattern to transit from bright to dark as they self-assemble to form a carboxyalte monolayer at the interface. When a drop of pre-incubated CAT and hydrogen peroxide mixture is placed onto the pattern, bright fan-shape is observed. This planar optical appearance indicates that catalase has decomposed hydrogen peroxide. Compared to the detectors that have been previously developed, this system is more sensitive with detection limit of 1fM. This research suggests further studies to be on LC droplet patterning to develop highly sensitive and methodologically simple sensors for various chemicals.