Effects of elastic strain on the agglomeration of silicide films for electrical contacts in integrated circuit applications |
Choy, J.H. (Department of Physics, Simon Fraser University) |
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Effects of Ti and TiN capping layers on cobalt-silicided MOS device characteristics in embedded DRAM and logic
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과학기술학회마을 |
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Interlayer mediated epitaxy of cobalt silicide on silicon (100) from low temperture chemical vapor deposition of cobalt
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DOI ScienceOn |
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Structure and orientation of epitaxial titanium silicide naaowires determined by electron microdiffraction
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DOI ScienceOn |
5 |
On the morphological development of second-phase particles in elastically-stressed solids
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DOI ScienceOn |
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Modelling the evolution of phase boundaries in solids at the meso-and nano-scales
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DOI ScienceOn |
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The elastic behavior of a crystalline aggregate
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Determination of the elastic constants of a cobalt disilicide intermetallic compound
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DOI |
10 |
Epitaxial growth of CoSi2 on hydrogen-terminated Si(001)
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DOI ScienceOn |
11 |
Morphological changes of a surface of revolution due o capillarity-induced surface diffusion
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DOI |
12 |
Nonlinear stability analysis of the diffusional spheroidization of rods
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DOI ScienceOn |
13 |
Anomalous scaling effect of tungsten/titanium nitride/titanium to silicon electrical contact resistance for giga bit DRAM applications
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DOI ScienceOn |
14 |
Effects of cobalt silicidation and post annealing on void defects at the sidewall spacer edge of metal-oxide-silicon field effect transistors
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DOI |
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Elastic constants of silicon using monte carlo simulations
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Density functional theory for calculation of elastic properties of orthorhombic crystals: application to TiSi2
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DOI ScienceOn |
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On the shape evolution of a two dimensional coherent precipitate with a general misfit strain
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Growth of epitaxial C54 TiSi2 on Si(111) substrate by in situ annealing in ultrahigh vacuum
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DOI |
19 |
Theoretical considerations on ion channeling effect through silicide-silicon interface
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DOI |
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