• Journal of Korea Foundry Society
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• v.25 no.3
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• pp.128-133
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• 2005

The effects of Mn and Cr on the crystallization behaviors of Fe-bearing intennetallics in A356 alloy were studied. Coarse and acicular ${\beta}-Al_{5}$FeSi phase in A356-0.20wt.%Fe alloy was modified into small ${\alpha}$-Al(Fe,Mn)Si and ${\alpha}$-Al(Fe,Cr)Si phases in response to Mn and Cr addition, respectively. Increasing of Mn addition amount elevates the crystallizing temperature of ${\alpha}$-Al(Fe,Mn)Si and the Mn/Fe ratio in the ${\alpha}$-Al(Fe,Mn)Si. Cr is more effective to modify ${\beta}-Al_{5}$FeSi in comparison with Mn. ${\alpha}$-Al(Fe,Mn)Si phase had BCC/SC dual structure.

• Bulletin of the Korean Chemical Society
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• v.19 no.5
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• pp.533-539
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• 1998

A magnetic film was deposited on a slide glass substrate from aqueous solutions of $FeCl_2$ and $NaNO_2$ at 363 K. XRD analysis showed that the film was polycrystalline magnetite $(Fe_{3(1-{\sigma})}O_4)$ without impurity phase. The lattice constant was 0.8390 nm. Mossbauer spectrum of the film could be deconvoluted by the following parameters: isomer shifts for tetrahedral $(T_d)$ and octahedral $(O_h)$ sites are 0.28 and 0.68 mm/s, respectively, and corresponding magnetic hyperfine fields are 490 and 458 kOe, respectively. The estimated chemical formula of the film by the peak intensity of Mossbauer spectrum was $Fe_{2.95}O_4$. Low temperature transition of the magnetite (Verwey transition) was not detected in resistivity measurement of the film. Properties of the film were discussed with those of pressed pellet and single crystal of synthetic magnetites. On the surface of the film, magnetite particles of about 0.2 μm in diameter were identified by noncontact atomic force microscopy (NAFM) and magnetic force microscopy (MFM).

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.89-95
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• 1995

The structure of boron ion-implanted pn junctio in the vacancy-doped p-type HgCdTe was investigated with the differential Hall measurement. The as-implanted junction showed the electron concentration as high as 1${\times}10^{18}/cm^{3}$ and the junction depth of 0.6.mu.m. When the HgCdTe junction was heated in oven, the electron concentration near the junction decreased and the junction depth increased as the annealing temperature and time increased. The junction structure after the thermal annealing was n$^{+}$/n$^{-}$/p. For the 200.deg. C 20min annealed sample, the electron mobility was 10$^{4}cm^{2}/V{\cdot}$s near the surface(n$^{+}$), and was larger thatn 10$^{5}cm^{2}/V{\cdot}$s near the junction(n$^{+}$). The junction formation mechanism is conjectured as follows. When HgCdTe is ion-implanted, the ion energy generates crystal defecis and displaced Hg atoms HgCdTe is ion-implanted, the ion energy generates crystal defecis and displaced Hg atoms near the surface. The displaced Hg vacancies diffuse in easily by the thernal treatment and a fill the Hg vacancies in the p-HgCdTe substrate. With the Hg vacancies filled completely, the GfCdTe substrate becomes n-type because of the residual n-type impurity which was added during the wafer growing. Therefore, the n$^{+}$/n$^{-}$/p regions are formed by crystal defects, residual impurities, and Hg vacancies, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.96-99
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• 2000

The photoluminescened experiments at temperature of 10K were carride out for ZnSe epilayers grown by hot-wall epitaxy. The upper and lower polariton peaks of the neutral dound exciton $I_2$($D^{\circ}$,X) for as-grown epilayer have been dominantly observed.For the heat-treatment under Se ambient,the origin of $I_2$ emission is confirmed to be related to Se-vacancy.The extra neutral acceptor bound exciton $I_1$$^d$ is also observed.The ZnSe epilayer shows the self-compensation effect and it is hard to be converted into p-type ZnSe epilayer.However,the photoluminescence spectrum of the annealed sample in Se ambient shows the intense $I_1$$^d$ emission.This indicates that in the annealed ZnSe epilayer,there are many acceptor levels due to the opical p-type converstion. The binding energy of acceptor-impurity is ecaluated to the value of 268meV and the self-activated emission is disappeared by thermal annealing under Se ambient,which indicates the association with Se-vacancy.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.2
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• pp.101-105
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• 2010

Silicon electrode and ring in a plasma etcher those are in contact with harsh plasma suffer from periodic heating and cooling during their lifetime. This causes the silicon components failure due to thermal stress remaining the persistent slip bands (PSBs) on their surfaces. The factors that determine the lifetime of silicon electrode and ring were discussed with respect to silicon ingot. The impurity level and the average defect concentration measured with glow discharge mass spectrometer (GDMS) and microwave photo-conductance decay (${\mu}$-PCD) were compared with the grade of silicon ingots those are divided to slip-free and slip-allowed ingot. Some silp-allowed samples showed planar defects along <110> direction on {001} surface. The role of these defects was suggested from the viewpoint of the lifetime of silicon components.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.1-7
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• 2014

Aluminum nitride, which has outstanding properties such as high thermal conductivity and electrical resistivity, has been received a great attention as a substrate and packaging material of semiconductor devices. Since aluminum nitride has a high sintering temperature of 2173 K and its properties depends on the impurity level, it is necessary to synthesize high-purity and nano-sized aluminum nitride powders for the applications. In this research, we synthesized high purity aluminum nitride nanopowders from aluminum using RF induction thermal plasma system. Sheath gas (NH3) flow was controlled to establish the synthesis condition of high purity aluminum nitride nanopowders. The obtained aluminum nitride nanopowders were evaluated by XRD, SEM, TEM, BET, FTIR and N-O analysis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.5
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• pp.362-366
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• 2000

$Li_{0.44}MnO_2$cathode material has high reversibility during lithium insertion processes and is not easily damaged through over-charging or over-discharging. $Mn_2O_3$is often present as an impurity phase, and reduce the electrochemical capacity of electrode because this phase is electrochemically inert. Adding of excess NaOH reduced the $Mn_2O_3$to the content under undetectable by X-ray diffraction. Because the capacity can be increased in the cathode materials with larger unit cell, some of the manganese was replaced with titanium having larger ion size, and powders with the formula $Li_{0.44}T_{iy}Mn_{1-y}O_2$(where y = 0.11, 0.22, 0.33, 0.44, and 0.55) was synthesized and characterized. A maximum reversible capacity of 150 mAh/g was obtained for $Li/P(EO)_8$LiTFSI/$Li_{0.44}Ti_{0.22}Mn_{0.78}O_2$cells in electrochemical potential spectroscopy (ECPS) experiments. Cells with the titanium-doped manganese oxides exhibited a fade rate of 0.12 % or less per cycle.

• Journal of the Korean Magnetics Society
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• v.15 no.3
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• pp.177-180
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• 2005

Ferroelectric $LiTaO_3$ single crystals, grown by the Czochralski method, were thermally treated at temperature $1000^{\circ}C\;and\;1100^{\circ}C$. Electron paramagnetic resonance (EPR) study of stoichiometric $LiTaO_3$ and thermally treated $LiTaO_3$ crystals has been investigated by employing an X-band spectrometer. From the $Fe^{3+}$ EPR spectra, it turned out that there is no change of site location and local site symmetry around $Fe^{3+}$ impurity ion between stoichiometric and thermally treated $LiTaO_3$ single crystals. We confirmed that the ionic state of $Fe^{3+}$ ion changed after thermal treatment. The EPR parameters of $Fe^{3+}$ ion in $LiTaO_3$ single crystals are determined with effective spin Hamiltonian.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.232-232
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• 2010

Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.4
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• pp.152-158
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• 2018

PVT (Physical Vapor Transport) method has advantages in producing high quality, large scale wafers where many researches are being carried out to commercialize nitride semiconductors. However, complex process variables cause various defects when it had non-equilibrium growth conditions. Annealing process after crystal growth has been widely used to enhance the crystallinity. It is important to set appropriate temperature, pressure, and annealing time to improve crystallinity effectively. In this study, the effect of the annealing conditions on the crystalline structure variation of the AlN single crystal grown by PVT method was investigated with synchrotron whitebeam X-ray topography, electron backscattered diffraction (EBSD), and Rietveld refinement. X-ray topography analysis showed secondary phases, sub-grains, impurities including carbon inclusion in the single crystal before annealing. EBSD analyses identified that sub-grains with slightly tilted basal plane appeared and the overall number of grains increased after the annealing process. Rietveld refinement showed that the stress caused by the temperature gradient during the annealing process between top and bottom in the hot zone not only causes distortion of grains but also changes the lattice constant.