• 제목/요약/키워드: Copper-coated cathode

검색결과 10건 처리시간 0.021초

3D Printed Flexible Cathode Based on Cu-EDTA that Prepared by Molecular Precursor Method and Microwave Processing for Electrochemical Machining

  • Yan, Binggong;Song, Xuan;Tian, Zhao;Huang, Xiaodi;Jiang, Kaiyong
    • Journal of Electrochemical Science and Technology
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    • 제11권2호
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    • pp.180-186
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    • 2020
  • In this work, a metal-ligand solution (Cu-EDTA) was prepared based on the molecular precursor method and the solution was spin-coated onto 3D printed flexible photosensitive resin sheets. After being processed by microwave, a laser with a wavelength of 355 nm was utilized to scan the spin-coated sheets and then the sheets were immersed in an electroless copper plating solution to deposit copper wires. With the help of microwave processing, the adhesion between copper wires and substrate was improved which should result from the increase of roughness, decrease of contact angle and the consistent orientation of coated film according to the results of 3D profilometer and SEM. XPS results showed that copper seeds formed after laser scanning. Using the 3D printed flexible sheets as cathode and galvanized iron as anode, electrochemical machining was conducted.

Electrochemical Catalytic Behavior of Cu2O Catalyst for Oxygen Reduction Reaction in Molten Carbonate Fuel Cells

  • Song, Shin Ae;Kim, Kiyoung;Lim, Sung Nam;Han, Jonghee;Yoon, Sung Pil;Kang, Min-Goo;Jang, Seong-Cheol
    • Journal of Electrochemical Science and Technology
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    • 제9권3호
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    • pp.195-201
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    • 2018
  • To enhance the performance of cathodes at low temperatures, a Cu-coated cathode is prepared, and its electrochemical performance is examined by testing its use in a single cell. At $620^{\circ}C$ and a current density of $150mAcm^{-2}$, a single cell containing the Cu-coated cathode has a significantly higher voltage (0.87 V) during the initial operation than does that with an uncoated cathode (0.79 V). According to EIS analysis, the high voltage of the cell with the Cu-coated cathode is due to the dramatic decrease in the high-frequency resistance related to electrochemical reactions. From XPS analysis, it is confirmed that the Cu is initially in the form of $Cu_2O$ and is converted into CuO after 150 h of operation, without any change in the state of the Ni or Li. Therefore, the high initial cell voltage is confirmed to be due to $Cu_2O$. Because $Cu_2O$ is catalytically active toward $O_2$ adsorption and dissociation, $Cu_2O$ on a NiO cathode enhances cell performance and reduces cathode polarization. However, the cell with the Cu-coated cathode does not maintain its high voltage because $Cu_2O$ is oxidized to CuO, which demonstrates similar catalytic activity toward $O_2$ as NiO.

Performance Assessment of Electrolysis Using Copper and Catalyzed Electrodes for Enhanced Nutrient Removal from Wastewater

  • Kim, Woo-Yeol;Son, Dong-Jin;Yun, Chan-Young;Kim, Dae-Gun;Chang, Duk;Sunwoo, Young;Hong, Ki-Ho
    • Journal of Electrochemical Science and Technology
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    • 제8권2호
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    • pp.124-132
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    • 2017
  • The performance of electrolytic processes using copper and catalyzed electrodes for enhanced nutrient removal with various catalyzers and combinations of electrodes was evaluated. The catalyzed electrodes removed more ammonia nitrogen than the copper electrode, but higher ammonia removal was achieved using a Pt/Ti anode. On the other hand, electrolysis using the Pt/Cu anode consumed less energy and cost less. During electroreduction, nitrate was better removed by a pair of copper electrodes than by the catalyzed electrodes. During electrolysis of synthetic wastewater, ammonia removal not only increased owing to direct oxidation at the anode, but was also influenced by indirect oxidation at the cathode. Platinum-coated copper and titanium cathodes actively produced oxidizers and thus removed more ammonia than a pure metal cathode. Although phosphorus was removable irrespective of the type of catalyzer, electrocoagulation using the copper electrode achieved complete removal of phosphorus in a period of less than 10 min.

리튬이온이차전지용 LiCoO2-유기전해액의 충전상태에 따른 열적 안정성 (Thermal Stability of Delithiated LiCoO2-organic Electrolyte for Lithium-Ion Rechargeable Batteries)

  • 김동훈;이영호;신혜민;정영동;도칠훈;진봉수;김현수;문성인;오대희;김기원
    • 한국전기전자재료학회논문지
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    • 제20권5호
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    • pp.421-424
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    • 2007
  • Thermal behavior of $Li_{1-x}CoO_2$ has been investigated employing DSC (Differential Scanning calorimetry) and TGA (Thermogravimetry Analyzer), and the crystal parameters were calculated from XRD (X-ray diffraction).for the commercial rectangular pouch cell(1000 mAh).The cathode materials coated over aluminium foil current collector is made up of a blend consisting of active material $LiCoO_2$(size $20\;{\mu}m$, 94 wt%), conducting material super p black (SPB, 3 wt%) and binder polyvinylidene fluoride (PVDF, 3 wt%). The anode is a mix consisting of carbon (92 wt%) and PVDF(8 wt%) coated over copper foil. The cells for the experiments were first preconditioned by cycling three times and stabilized at OCV=3.0, 3.5, 4.2, 4.35 and 4.5 V. The stabilized cathode material was used for thermal and crystal parameter investigations.

Split sputter mode: a novel sputtering method for flat-panel display manufacturing

  • Pieralisi, Fabio;Hanika, Markus;Scheer, Evelyn;Bender, Marcus
    • Journal of Information Display
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    • 제12권2호
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    • pp.89-92
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    • 2011
  • Advanced static DC magnetron sputtering methods based on the magnet wobbling technique were investigated to achieve highly uniform and homogeneous metallization layers. The novel split sputter mode (SSM) method, wherein the deposition process is divided into two distinct steps, enables the AKT rotary cathode technology to provide excellent layer properties, while keeping a high production throughput. The effectiveness of theSSMtechnique was demonstrated through copper-coated large-area substrates.

인쇄잉크용 알킷트바니쉬를 이용한 택크값의 유변학적 특성연구 (A study on the Rheological Analysis of Tack Values using Alkyd Vanish for Printing Ink)

  • 정윤회
    • 한국인쇄학회지
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    • 제8권1호
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    • pp.1-20
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    • 1990
  • $\alpha$,$\beta$,$\varepsilon$ type copper phthalocy $\alpha$,$\beta$,$\varepsilon$ type copper phthalocyanine(CuPc) pigment was purified by a simple train sublimation technique. The layered photoconductor was made with $\varepsilon$ type CuPc as a carrier generation layer(CGL) and polyvinly carvazol(PVCz) as a carrier transport layer(CLT). A CGL of CuPc was electrochemical deposited on an Al substrate used as cathode in pigment dispersion solutions. a CTL of PVCz pwas spin coated on $\varepsilon$ type CuPc thin film by a spin coater. The effect of sonication time, electrophotographic property of the layered photoconductor were studied with surface coverage, surface potential and sensitivity.

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국산동판을 사용한 리드프레임 도금기술에 관한 연구 (Electroplating on the Lead Frames Fabricated from Domestic Copper Plate)

  • 장현구;이대승
    • 한국표면공학회지
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    • 제19권3호
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    • pp.92-108
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    • 1986
  • An electroplating on the lead frame fabricated from domestic copper plate was studied experimentally. In this study, nickel was plated on the thin copper lead frame and silver layer was coated on the nickel film in the cyanide electrolyte. The effect of process variables such as current density, plating time, coating thickness and flow rate of electrolytic solution on the properties of coating was investigated. Some samples on each step were fabricated during electroplating. The results obtained from polarization measurement, observation of SEM photograph, adhesion test of coating and microhardness test are as follows. On silver plating, polarization resistance of potentiostatic cathodic polarization curve is reduced as the flow rate of Ag electrolytic solution increases. And above resistance is also reduced when the minor chemicals of sodium cyanide and sodium carbonate are added in potassium silver cyanide bath. The reduced polarization resistance makes silver deposition on the cathode easy. An increase in the current density and the coating thickness causes the particle size of deposit to coarsen, and consequently the Knoop microhardness of the coating decreases. On selective plating an increase in the flow rate of plating solution lead to do high speed plating with high current density. In this case, the surface morphology of deposit is of fine microstructure with high Knoop hardness. An increasing trend of the adhesion of coating was shown with increasing the current density and flow rate of electrolytic solution.

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흑색 황산3가크롬을 이용한 태양열 흡열판 선택흡수막 도금기술 (Technology of selective absorber coatings on solar collectors using black chromium+3 sulfate acid on substrates)

  • 엄태인;여운택;김동찬
    • 한국태양에너지학회 논문집
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    • 제33권3호
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    • pp.27-35
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    • 2013
  • One of the most important factors that have a large influence on performance of the solar water heater system is performance of the solar collector, more detailedly, coating technology on the surface of the solar collector, which can provide high solar absorptance and low emittance. The core of the coating technology is to coat solar selective surfaces. In this study, various performance experiments are carried out using $Cr_2(SO_4)_3{\cdot}15H_2O$ coating technology. Here, IGBT(Insulated Gate Bipolar Transistor) of 5000A-15V was used as the surface processing rectifier which can stably output power and also can control voltage and current. The plating solution mainly contains black chrome$^{+3}$ concentration, H-y Conductivity, N-u Complex, NF Additive and NC-2 Wetter. Before applying the black chrome coating on the copper plate, optimal conditions are provided by using various preprocessing methods such as removal of fat, activation, electrolytic polishing, nickel strike, copper sulfate plating and bright neckel plating, and then the automatic continuous coating experiment are performed according to plating time and cathode current density. In the experiment, after the removal of fat, chemical polishing, nickel strike and activation processes as the preprocessing methods, the black chrome coating was performed in a plate solution temperature of $28^{\circ}C$ and a cathode current density of $18A/cm^2$ for 90 seconds. The thickness of chrome and nickel on the coated plate is $0.389{\mu}m$, $159{\mu}m$ respectively. As a result of the coating experiment, it showed the most excellent performance having a high solar absorptance of 98% and a low emittance of $5{\pm}1%$ when the black chrome surface had a thickness of $0.398{\mu}m$.

Study of the Optimization and the Depth Profile Using a Flat Type Ion Source in Glow Discharge Mass Spectrometry

  • Woo Jin Chun;Kim, Hyo Jin;Lim Heoung Bin;Moon Dae Won;Lee Kwang Woo
    • Bulletin of the Korean Chemical Society
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    • 제13권6호
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    • pp.620-624
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    • 1992
  • The analytical performance of glow discharge mass spectrometer (GD-MS), using a flat type ion source is discussed. The efficiency of ion extraction was maximized at the distance between anode and cathode of 6 mm. At the operation condition of 4 mA, -1000 volt, and 1 mbar for the source, the optimum voltages for sampler and skimmer were40 volt and -280 volt, respectively. The intensities of Cu, Zn, and Mn were increased as a function of square root of current approximately. Korea standard reference materials (KSRM) were tested for an application study. The detection limits of most elements were obtained in the range of several ppm at the optimized operating condition. The peaks of aluminum and chromium were interfered by those of residual gases. The depth profile of nickel coated copper specimens (3, 5, 10 ${\mu}m$ thickness) were obtained by plotting time versus intensities of Ni and Cr after checking the thickness of nickel coated using a scanning electron microscope (SEM). At this moment, the sputtering rate of 0.2 ${\mu}m/min$ at the optimum operating condition was determined from the slope of the plot of time to the coating thickness. The roughness spectra of specimen's crater after 16 min, discharge were obtained using a Talysuf5m-120 roughness tester as well.

3차원 실장용 TSV의 펄스전류 파형을 이용한 고속 Cu도금 충전 (High Speed Cu Filling Into TSV by Pulsed Current for 3 Dimensional Chip Stacking)

  • 김인락;박준규;추용철;정재필
    • 대한금속재료학회지
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    • 제48권7호
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    • pp.667-673
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    • 2010
  • Copper filling into TSV (through-silicon-via) and reduction of the filling time for the three dimensional chip stacking were investigated in this study. A Si wafer with straight vias - $30\;{\mu}m$ in diameter and $60\;{\mu}m$ in depth with $200\;{\mu}m$ pitch - where the vias were drilled by DRIE (Deep Reactive Ion Etching) process, was prepared as a substrate. $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to reduce the time required complete the Cu filling into the TSV, the PPR (periodic pulse reverse) wave current was applied to the cathode of a Si chip during electroplating, and the PR (pulse-reverse) wave current was also applied for a comparison. The experimental results showed 100% filling rate into the TSV in one hour was achieved by the PPR electroplating process. At the interface between the Cu filling and Ti/ Au functional layers, no defect, such as a void, was found. Meanwhile, the electroplating by the PR current showed maximum 43% filling ratio into the TSV in an hour. The applied PPR wave form was confirmed to be effective to fill the TSV in a short time.