• 한국표면공학회지
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• 제55권4호
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• pp.215-221
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• 2022

In the present work, copper oxide thin films were formed by heat-treatment method with different temperatures and atmosphere, e.g., at 200 ~ 400 ℃; in air and Ar atmosphere. The morphological, electrical and optical properties of the thermally fabricated Cu oxide films were analyzed by SEM, XRD, and UV-VIS spectrometer. Thereafter, photoelectrochemical properties of the thermal copper oxide films were analyzed under solar light (AM 1.5, 100 mW/cm²). Conclusively, the highest photocurrent was obtained with Cu₂O formed under the optimum annealing condition at 300 ℃ in air atmosphere. In addition, EIS results of Cu oxide formed in air atmosphere showed relatively low resistance and long electron life-time compared with Cu Oxide fabricated in Ar atmosphere at the same temperature. This is because heat-treatment in Ar atmosphere could not form Cu₂O due to lack of oxygen, and thermally formed CuO at high temperature suppressed stability and conductivity of the Cu oxide.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.138.2-138.2
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• 2013

Copper oxide is a multi-functional material being used in various research areas including catalysis, electrochemical materials, oxidizing agents etc. Among these areas, we have synthesized and utilized graphene based copper oxide nanocomposites (CuOx/Graphene) for the catalytic applications (C-N cross coupling reaction). Briefly, Cu precursors were anchored on the graphite oxide(GO) sheets being exfoliated and oxidized from graphite powder. Two different crystalline structures of Cu2O and CuO on graphene and GO were prepared by annealing them in Ar and O2 environments, respectively. The morphological and electronic structures were systemically investigated using FT-IR, XRD, XPS, XAFS, and TEM. Here, we demonstrate that the catalytic performance was found to depend on oxidative states and morphological structures of CuOx graphene nanocomposites. The relationship between the structure of copper oxides and catalytic efficiency toward C-N cross coupling reaction will be discussed.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 The 6th International Symposium of East Asian Resources Recycling Technology
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• pp.448-452
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• 2001

An Experimental study was carried out to develop a simple method of processing copper waste sludge which is produced by PBC manufacturing. The procedure is based on leaching of wet sludge in 2N H$_2$SO$_4$, and the solid / liquid ratio is controlled approximately at 1/10. The recovery of copper is 85.4%, and pH of the leachate is 3.20. Adding ammonia solution into leachate forms ammine, and hydroxide compounds derived from other impurities in leachate at pH 10. The hydroxide compound can be treated by ferrite process, and the product is a stable oxide compound. Then the ammine solution is heated to evaporate ammonia, and the copper hydroxide is formed. Heating at 8$0^{\circ}C$by aeration, copper hydroxide is transformed into copper oxide with a purity of 98.4%. This process can recover most copper from sludge and the residue can be stabilized by the formation of a stable oxide compound which is not hazardous to environment.

• 한국세라믹학회지
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• 제48권2호
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• pp.195-199
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• 2011

The effect of copper oxide on migration and interaction of protons in barium zirconate was investigated using density functional theory. One copper atom was substituted for a zirconium atom site, and a proton was added to a $3{\times}3{\times}3$ barium zirconate superstructure. An energy barrier of 0.89 eV for proton migration was the highest among several energy barriers. To investigate the interaction between multiple protons and a copper atom, two protons were added to the superstructure. Various proton positions were determined by the interaction between the two protons and the copper atom.

• Corrosion Science and Technology
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• 제9권6호
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• pp.276-280
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• 2010

Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.

• 농약과학회지
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• 제7권2호
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• pp.149-154
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• 2003

Erwinia carotovora subsp. atroseptica 에 의하여 발생하는 감자 흑각병은 국내의 감자생산에 큰 피해를 주고 있다. 감자흑각병에 대하여 효과적인 방제약제를 선발하기 위한 선행 실내시험에서 억제효과가 높은 것으로 보고된 4종의 혼합제 [streptomycin(9.3 ppm) + copper oxide(171.6 ppm)/copper hydroxide(146.3 ppm), streptomycin sulfate(7.0 ppm) + copper oxide(171.6 ppm)/copper hydroxide(146.3 ppm)]와 2 종의 항생제 streptomycin(11.6 ppm)과 streptomycin sulfate(8.75 ppm)에 대한 포장에서의 감자흑각병 방제효과를 조사하였다. 감자 이병 종서에 대한 방제효과 시험결과 streptomycin(81.4 ppm)과 streptomycin sulfate(61.3 ppm) 가 각각 상이한 토양조건에서 높은 방제효과가 나타나, 이들 약제를 이병 종서에 대한 종자소독제로 사용할 수 있는 것으로 확인되었다. 감자 식물체에 대한 방제효과 시험에서는 streptomycin(27.9 ppm)+copper oxide(514.8 ppm) 혼합제와 streptomycin sulfate(21.0 ppm) + copper hydroxide(438.9 ppm) 혼합제가 다른 기상조건에서 높은 방제효과를 나타내었는데, 이들 약제를 경엽 처리제로 사용한다면 감자흑각병 방제에 효과적일 것으로 사료된다.

• 한국결정성장학회지
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• 제27권5호
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• pp.243-248
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• 2017

본 연구에서는 산화주석(IV) 첨가량을 달리하여 동화유약 시편을 제조하고 발색기구를 분석하기 위하여 분광 분석, 결정상 분석, 미세구조 분석을 실시하여 색상과의 상관성을 분석하였다. 산화주석(VI) 첨가량이 증가함에 따라 동화유약의 붉은색은 사라지고 CIEab 값이 감소하여 무채색으로 발색하였다. 산화주석은 유약층에 고르게 분포하여 Cu nuclei가 성장하여 붉은색으로 발색하는 것을 방해하고 기포 주변의 metal Cu와 반응하여 합금을 형성하였다. 이로 인해 산화주석 첨가량이 증가함에 따라 금속 Cu 피크는 사라지고 미세한 $Cu_2O$ 피크만 남게 된다. 산화주석을 3.79 % 첨가하였을 때는 유약에 붉은색을 내는 $Cu_2O$보다 검정색을 나타내는 CuO와 Cassiterite $SnO_2$가 색상에 더 영향을 미치는 것으로 보여진다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.245-245
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• 2009

l-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Copper oxide(CuO) has been realized as a p-type metal oxide semiconductor with narrow band gap of 1.2 -1.5eV. Copper oxide nanostructures can be synthesized by various growth method such as oxidation reaction, thermal evaporation thermal decomposition, sol-gel. and Mostly CuO nanowire prepared on the Cu substrate such as Copper foil, grid, plate. In this study, CuO NWs were grown by thermal oxidation (at various temperatures in air (1 atm)) of Cu metal deposited on CuO (20nm)/$SiO_2$(250nm)/Si. A 20nm-thick CuO layer was used as an adhesion layer between Cu metal and $SiO_2$

• 한국군사과학기술학회지
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• 제21권5호
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• pp.591-598
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• 2018

The reaction characteristics of aluminum-copper(II) oxide composites initiated by the electrostatic discharge were studied as changing the aluminum particle size. Three different sizes of aluminum particles with nano-size copper(II)-oxide particle were used in the study. These composites were manufactured by two methods i.e. a shock-gel method and a self-assembly method. The larger aluminum particle size was, the less sensitive and less violent these composites were based on the electrostatic test. On the analysis of high speed camera about ignition appearances and burning time, the burning speed was faster when aluminum particle size was smaller.

• Bulletin of the Korean Chemical Society
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• 제32권9호
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• pp.3395-3399
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• 2011

Copper oxide thin films were synthesized by reactive radio frequency magnetron sputtering at different oxygen gas ratios. The chemical and physical properties of the thin films were investigated by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD). XPS results revealed that the dominant oxidation states of Cu were $Cu^0$ and $Cu^+$ at 0% oxygen ratio. When the oxygen ratios increased above 5%, Cu was oxidized as CuO as detected by X-ray induced Auger electron spectroscopy and the $Cu(OH)_2$ phase was confirmed independent of the oxygen ratio. The valence band maxima were $1.19{\pm}0.09$ eV and an increase in the density of states was confirmed after formation of CuO. The thickness and roughness of copper oxide thin films decreased with increasing oxygen ratio. The crystallinity of the copper oxide films changed from cubic Cu through cubic $Cu_2O$ to monoclinic CuO with mean crystallite sizes of 8.8 nm (Cu) and 16.9 nm (CuO) at the 10% oxygen ratio level.